DE3273864D1 - Infra-red radiation imaging devices and methods for their manufacture - Google Patents

Infra-red radiation imaging devices and methods for their manufacture

Info

Publication number
DE3273864D1
DE3273864D1 DE8282200318T DE3273864T DE3273864D1 DE 3273864 D1 DE3273864 D1 DE 3273864D1 DE 8282200318 T DE8282200318 T DE 8282200318T DE 3273864 T DE3273864 T DE 3273864T DE 3273864 D1 DE3273864 D1 DE 3273864D1
Authority
DE
Germany
Prior art keywords
infra
manufacture
methods
imaging devices
radiation imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282200318T
Other languages
German (de)
English (en)
Inventor
Ian Martin Baker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Electronics Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd, Philips Gloeilampenfabrieken NV filed Critical Philips Electronic and Associated Industries Ltd
Application granted granted Critical
Publication of DE3273864D1 publication Critical patent/DE3273864D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1538—Time-delay and integration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H10F39/1575—CCD or CID infrared image sensors of the hybrid type
DE8282200318T 1981-03-27 1982-03-11 Infra-red radiation imaging devices and methods for their manufacture Expired DE3273864D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8109778 1981-03-27

Publications (1)

Publication Number Publication Date
DE3273864D1 true DE3273864D1 (en) 1986-11-20

Family

ID=10520733

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282200318T Expired DE3273864D1 (en) 1981-03-27 1982-03-11 Infra-red radiation imaging devices and methods for their manufacture

Country Status (6)

Country Link
US (1) US4521798A (en:Method)
EP (1) EP0061803B1 (en:Method)
JP (1) JPS57171226A (en:Method)
DE (1) DE3273864D1 (en:Method)
GB (1) GB2095905B (en:Method)
IL (1) IL65340A0 (en:Method)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527183A (en) * 1981-07-10 1985-07-02 General Electric Company Drilled, diffused radiation detector
GB2207802B (en) * 1982-08-27 1989-06-01 Philips Electronic Associated Thermal-radiation imaging devices and systems,and the manufacture of such imaging devices
GB2248341B (en) * 1982-07-28 1992-08-19 Philips Electronic Associated Infra-red radiation imaging device arrangements
US4720738A (en) * 1982-09-08 1988-01-19 Texas Instruments Incorporated Focal plane array structure including a signal processing system
JPS5965474A (ja) * 1982-09-08 1984-04-13 テキサス・インスツルメンツ・インコ−ポレイテツド 集積された検出器アレイと信号処理器
JPS5984467A (ja) * 1982-11-06 1984-05-16 Mitsubishi Electric Corp モノリシツク赤外線電荷転送素子
GB2208256B (en) * 1983-04-15 1989-07-26 Philips Electronic Associated Infra-red radiation imaging devices and systems
DE3480629D1 (de) * 1983-08-31 1990-01-04 Texas Instruments Inc Infrarot-bildwandler.
EP0186162B1 (en) * 1984-12-24 1989-05-31 Kabushiki Kaisha Toshiba Solid state image sensor
JPS6219924A (ja) * 1985-07-18 1987-01-28 Yoshiro Hashimoto 情報処理用キ−ボ−ド
GB2200246B (en) * 1985-09-12 1989-11-01 Plessey Co Plc Thermal detector array
GB2181011B (en) * 1985-09-20 1989-09-06 Philips Electronic Associated Imaging devices comprising photodetector elements
GB2181012B (en) * 1985-09-20 1989-09-13 Philips Electronic Associated Imaging devices comprising photovoltaic detector elements
US4695861A (en) * 1985-10-21 1987-09-22 Honeywell Inc. Backside mosaic photoconductive infrared detector array
US4695715A (en) * 1985-12-12 1987-09-22 Northrop Corporation Infrared imaging array employing metal tabs as connecting means
DE3622879C2 (de) * 1986-07-08 1997-04-10 Licentia Gmbh Detektoranordnung
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
WO1989005043A1 (en) * 1987-11-23 1989-06-01 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
JP2517075B2 (ja) * 1988-08-31 1996-07-24 三菱電機株式会社 赤外線検知器
GB2239555B (en) * 1989-03-01 1993-02-24 Philips Electronic Associated Infrared image-sensing devices and their manufacture
EP0407062A3 (en) * 1989-06-29 1991-02-06 Texas Instruments Incorporated A method and apparatus for forming an infrared detector having a refractory metal
KR930007532B1 (ko) * 1990-07-12 1993-08-12 금성일렉트론 주식회사 Soi 구조를 이용한 3차원 ccd 영상소자 및 그 제조방법
JPH0492481A (ja) * 1990-08-07 1992-03-25 Mitsubishi Electric Corp 光検知装置
JP2861340B2 (ja) * 1990-09-07 1999-02-24 ソニー株式会社 半導体装置
GB2247985A (en) * 1990-09-12 1992-03-18 Philips Electronic Associated Plural-wavelength infrared detector devices
EP0510267A1 (en) * 1991-04-24 1992-10-28 Gec-Marconi Limited Imaging array devices and staring array imaging systems
GB9116307D0 (en) * 1991-07-29 1991-11-06 Philips Electronic Associated Infrared detectors
JP2809908B2 (ja) * 1991-09-30 1998-10-15 三菱電機株式会社 固体撮像素子
GB9204078D0 (en) * 1992-02-26 1992-04-08 Philips Electronics Uk Ltd Infrared detector manufacture
GB2265253A (en) * 1992-03-18 1993-09-22 Philips Electronics Uk Ltd Infrared detector devices and their manufacture using directional etching to define connections
US5236871A (en) * 1992-04-29 1993-08-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing a hybridization of detector array and integrated circuit for readout
JPH0714996A (ja) * 1993-06-18 1995-01-17 Mitsubishi Electric Corp 赤外線検出器とその製造方法
US5705261A (en) * 1993-10-28 1998-01-06 Saint-Gobain/Norton Industrial Ceramics Corporation Active metal metallization of mini-igniters by silk screening
US5536680A (en) * 1995-05-08 1996-07-16 Texas Instruments Incorporated Self-aligned bump bond infrared focal plane array architecture
DE19528573A1 (de) * 1995-08-03 1997-02-06 Siemens Ag Photodiode und Verfahren zu deren Herstellung
DE19549228A1 (de) * 1995-12-21 1997-06-26 Heidenhain Gmbh Dr Johannes Optoelektronisches Sensor-Bauelement
JP3413078B2 (ja) * 1997-10-06 2003-06-03 キヤノン株式会社 光電変換装置と密着型イメージセンサ
US6198118B1 (en) * 1998-03-09 2001-03-06 Integration Associates, Inc. Distributed photodiode structure
US6548878B1 (en) 1998-02-05 2003-04-15 Integration Associates, Inc. Method for producing a thin distributed photodiode structure
US6753586B1 (en) 1998-03-09 2004-06-22 Integration Associates Inc. Distributed photodiode structure having majority dopant gradient and method for making same
US6486476B1 (en) * 1998-12-22 2002-11-26 Hitachi, Ltd. Semiconductor radiation detector and manufacture thereof
FR2868602B1 (fr) 2004-04-05 2006-05-26 Commissariat Energie Atomique Circuit de detection photonique a structure mesa
US9287430B1 (en) * 2007-11-01 2016-03-15 Sandia Corporation Photovoltaic solar concentrator
USD621682S1 (en) 2009-08-21 2010-08-17 Schlage Lock Company Llc Door lever
USD621681S1 (en) 2009-08-21 2010-08-17 Schlage Lock Company Llc Door lever

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372070A (en) * 1965-07-30 1968-03-05 Bell Telephone Labor Inc Fabrication of semiconductor integrated devices with a pn junction running through the wafer
US3903427A (en) * 1973-12-28 1975-09-02 Hughes Aircraft Co Solar cell connections
US4104674A (en) * 1977-02-07 1978-08-01 Honeywell Inc. Double sided hybrid mosaic focal plane
US4188709A (en) * 1977-02-07 1980-02-19 Honeywell Inc. Double sided hybrid mosaic focal plane
US4206470A (en) * 1977-09-01 1980-06-03 Honeywell Inc. Thin film interconnect for multicolor IR/CCD
US4197633A (en) * 1977-09-01 1980-04-15 Honeywell, Inc. Hybrid mosaic IR/CCD focal plane
US4197469A (en) * 1978-05-25 1980-04-08 Rockwell International Corporation Capacitively coupled array of photodetectors
US4371882A (en) * 1978-07-20 1983-02-01 The United States Of America As Represented By The Secretary Of The Navy Process for preparing isolated junctions in thin-film semiconductors
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors
US4411735A (en) * 1982-05-06 1983-10-25 National Semiconductor Corporation Polymeric insulation layer etching process and composition

Also Published As

Publication number Publication date
EP0061803A3 (en) 1983-02-09
GB2095905A (en) 1982-10-06
IL65340A0 (en) 1982-05-31
JPS57171226A (en) 1982-10-21
EP0061803B1 (en) 1986-10-15
JPH027417B2 (en:Method) 1990-02-19
EP0061803A2 (en) 1982-10-06
GB2095905B (en) 1985-01-16
US4521798A (en) 1985-06-04

Similar Documents

Publication Publication Date Title
GB2095905B (en) Infra-red radiation imaging devices and methods for their manufacture
DE3379884D1 (en) Infra-red radiation detectors and their manufacture
DE3369193D1 (en) Infra-red radiation detectors
IL66149A0 (en) Radiation absorbing surfaces and their preparation
DE3476119D1 (en) Infra-red radiation detector
GB2105033B (en) Infrared ray detector
IL67195A (en) Therapeutic radiation apparatus
DE3271493D1 (en) Infrared radiation detector device
DE3277791D1 (en) Infra-red radiation imaging devices
JPS57203981A (en) Radiation device
JPS57177136A (en) Radiation photograph device
GB2130717B (en) Radiation pyrometer
GB2208256B (en) Infra-red radiation imaging devices and systems
JPS57161999A (en) Gate type radiation monitor
GB2050130B (en) Infrared radiation apparatus
DE3367121D1 (en) Pyroelectric infra-red radiation detector
DE3267278D1 (en) Infra-red radiation detector
EP0145071A3 (en) Infra-red radiation detector
GB2096427B (en) Infrared imaging and tracking means
DE3269487D1 (en) Radiation detector
GB2133615B (en) Pyroelectric infra-red radiation detector
GB8333439D0 (en) Selective measurement of infrared radiation
JPS5722745A (en) Radiation imaging device
GB2246237B (en) Infra-red radiation imaging device arrangements
GB2248341B (en) Infra-red radiation imaging device arrangements

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GEC-MARCONI LTD., STANMORE, GB

8328 Change in the person/name/address of the agent

Free format text: MANITZ, G., DIPL.-PHYS. DR.RER.NAT. FINSTERWALD, M., DIPL.-ING. DIPL.-WIRTSCH.-ING., 80538 MUENCHEN ROTERMUND, H., DIPL.-PHYS., 70372 STUTTGART HEYN, H., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 80538 MUENCHEN