DE3260213D1 - Semiconductor device with deviation of "ballistic transport" type electrons, and method of making the same - Google Patents

Semiconductor device with deviation of "ballistic transport" type electrons, and method of making the same

Info

Publication number
DE3260213D1
DE3260213D1 DE8282400033T DE3260213T DE3260213D1 DE 3260213 D1 DE3260213 D1 DE 3260213D1 DE 8282400033 T DE8282400033 T DE 8282400033T DE 3260213 T DE3260213 T DE 3260213T DE 3260213 D1 DE3260213 D1 DE 3260213D1
Authority
DE
Germany
Prior art keywords
deviation
making
semiconductor device
same
ballistic transport
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282400033T
Other languages
German (de)
English (en)
Inventor
Paul Robert Jay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3260213D1 publication Critical patent/DE3260213D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
DE8282400033T 1981-01-27 1982-01-08 Semiconductor device with deviation of "ballistic transport" type electrons, and method of making the same Expired DE3260213D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8101466A FR2498815A1 (fr) 1981-01-27 1981-01-27 Dispositif semi-conducteur de deviation d'electrons du type " a transport balistique ", et procede de fabrication d'un tel dispositif

Publications (1)

Publication Number Publication Date
DE3260213D1 true DE3260213D1 (en) 1984-07-19

Family

ID=9254548

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282400033T Expired DE3260213D1 (en) 1981-01-27 1982-01-08 Semiconductor device with deviation of "ballistic transport" type electrons, and method of making the same

Country Status (6)

Country Link
US (1) US4563696A (enExample)
EP (1) EP0058577B1 (enExample)
JP (1) JPS57143870A (enExample)
CA (1) CA1177583A (enExample)
DE (1) DE3260213D1 (enExample)
FR (1) FR2498815A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
DE3432901C1 (de) * 1984-09-07 1986-01-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US4866660A (en) * 1988-02-29 1989-09-12 Amp Incorporated Optoelectraulic devices based on interference induced carrier modulation
EP0416198A1 (en) * 1989-08-30 1991-03-13 International Business Machines Corporation Electron wave deflection in modulation doped and other doped semiconductor structures
JPH05315598A (ja) * 1992-05-08 1993-11-26 Fujitsu Ltd 半導体装置
US7440227B2 (en) * 2005-02-28 2008-10-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560963A (en) * 1968-06-27 1971-02-02 Theodore R Trilling Field effect a/d converter
US3593045A (en) * 1969-12-29 1971-07-13 Bell Telephone Labor Inc Multiaddress switch using a confined electron beam in a semiconductor
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
DE2804165C2 (de) * 1978-02-01 1982-11-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einem für die Stromführung geeigneten Kanal und Verfahren zum Betrieb dieser Halbleiteranordnung
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device

Also Published As

Publication number Publication date
US4563696A (en) 1986-01-07
CA1177583A (en) 1984-11-06
JPS57143870A (en) 1982-09-06
FR2498815A1 (fr) 1982-07-30
EP0058577B1 (fr) 1984-06-13
EP0058577A1 (fr) 1982-08-25
FR2498815B1 (enExample) 1983-02-18
JPH0261146B2 (enExample) 1990-12-19

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee