DE3260213D1 - Semiconductor device with deviation of "ballistic transport" type electrons, and method of making the same - Google Patents
Semiconductor device with deviation of "ballistic transport" type electrons, and method of making the sameInfo
- Publication number
- DE3260213D1 DE3260213D1 DE8282400033T DE3260213T DE3260213D1 DE 3260213 D1 DE3260213 D1 DE 3260213D1 DE 8282400033 T DE8282400033 T DE 8282400033T DE 3260213 T DE3260213 T DE 3260213T DE 3260213 D1 DE3260213 D1 DE 3260213D1
- Authority
- DE
- Germany
- Prior art keywords
- deviation
- making
- semiconductor device
- same
- ballistic transport
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8101466A FR2498815A1 (fr) | 1981-01-27 | 1981-01-27 | Dispositif semi-conducteur de deviation d'electrons du type " a transport balistique ", et procede de fabrication d'un tel dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3260213D1 true DE3260213D1 (en) | 1984-07-19 |
Family
ID=9254548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282400033T Expired DE3260213D1 (en) | 1981-01-27 | 1982-01-08 | Semiconductor device with deviation of "ballistic transport" type electrons, and method of making the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US4563696A (de) |
EP (1) | EP0058577B1 (de) |
JP (1) | JPS57143870A (de) |
CA (1) | CA1177583A (de) |
DE (1) | DE3260213D1 (de) |
FR (1) | FR2498815A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
US4712122A (en) * | 1984-07-26 | 1987-12-08 | Research Development Corp. | Heterojunction gate ballistic JFET with channel thinner than Debye length |
DE3432901C1 (de) * | 1984-09-07 | 1986-01-16 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung |
US4866660A (en) * | 1988-02-29 | 1989-09-12 | Amp Incorporated | Optoelectraulic devices based on interference induced carrier modulation |
EP0416198A1 (de) * | 1989-08-30 | 1991-03-13 | International Business Machines Corporation | Elektronenwellenablenkung in modulationsdotierten und anderen dotierten Halbleiterstrukturen |
JPH05315598A (ja) * | 1992-05-08 | 1993-11-26 | Fujitsu Ltd | 半導体装置 |
US7440227B2 (en) * | 2005-02-28 | 2008-10-21 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3560963A (en) * | 1968-06-27 | 1971-02-02 | Theodore R Trilling | Field effect a/d converter |
US3593045A (en) * | 1969-12-29 | 1971-07-13 | Bell Telephone Labor Inc | Multiaddress switch using a confined electron beam in a semiconductor |
US4129880A (en) * | 1977-07-01 | 1978-12-12 | International Business Machines Incorporated | Channel depletion boundary modulation magnetic field sensor |
DE2804165C2 (de) * | 1978-02-01 | 1982-11-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung mit einem für die Stromführung geeigneten Kanal und Verfahren zum Betrieb dieser Halbleiteranordnung |
US4366493A (en) * | 1980-06-20 | 1982-12-28 | International Business Machines Corporation | Semiconductor ballistic transport device |
-
1981
- 1981-01-27 FR FR8101466A patent/FR2498815A1/fr active Granted
-
1982
- 1982-01-08 EP EP82400033A patent/EP0058577B1/de not_active Expired
- 1982-01-08 DE DE8282400033T patent/DE3260213D1/de not_active Expired
- 1982-01-20 US US06/340,965 patent/US4563696A/en not_active Expired - Fee Related
- 1982-01-25 CA CA000394852A patent/CA1177583A/en not_active Expired
- 1982-01-26 JP JP57009620A patent/JPS57143870A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57143870A (en) | 1982-09-06 |
JPH0261146B2 (de) | 1990-12-19 |
FR2498815B1 (de) | 1983-02-18 |
CA1177583A (en) | 1984-11-06 |
FR2498815A1 (fr) | 1982-07-30 |
EP0058577B1 (de) | 1984-06-13 |
US4563696A (en) | 1986-01-07 |
EP0058577A1 (de) | 1982-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |