JPS57143870A - Trajectory transport type semiconductor device and method of producing same - Google Patents

Trajectory transport type semiconductor device and method of producing same

Info

Publication number
JPS57143870A
JPS57143870A JP57009620A JP962082A JPS57143870A JP S57143870 A JPS57143870 A JP S57143870A JP 57009620 A JP57009620 A JP 57009620A JP 962082 A JP962082 A JP 962082A JP S57143870 A JPS57143870 A JP S57143870A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
producing same
transport type
trajectory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57009620A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0261146B2 (enExample
Inventor
Robeeru Jiyai Pooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS57143870A publication Critical patent/JPS57143870A/ja
Publication of JPH0261146B2 publication Critical patent/JPH0261146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57009620A 1981-01-27 1982-01-26 Trajectory transport type semiconductor device and method of producing same Granted JPS57143870A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8101466A FR2498815A1 (fr) 1981-01-27 1981-01-27 Dispositif semi-conducteur de deviation d'electrons du type " a transport balistique ", et procede de fabrication d'un tel dispositif

Publications (2)

Publication Number Publication Date
JPS57143870A true JPS57143870A (en) 1982-09-06
JPH0261146B2 JPH0261146B2 (enExample) 1990-12-19

Family

ID=9254548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57009620A Granted JPS57143870A (en) 1981-01-27 1982-01-26 Trajectory transport type semiconductor device and method of producing same

Country Status (6)

Country Link
US (1) US4563696A (enExample)
EP (1) EP0058577B1 (enExample)
JP (1) JPS57143870A (enExample)
CA (1) CA1177583A (enExample)
DE (1) DE3260213D1 (enExample)
FR (1) FR2498815A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
DE3432901C1 (de) * 1984-09-07 1986-01-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US4866660A (en) * 1988-02-29 1989-09-12 Amp Incorporated Optoelectraulic devices based on interference induced carrier modulation
EP0416198A1 (en) * 1989-08-30 1991-03-13 International Business Machines Corporation Electron wave deflection in modulation doped and other doped semiconductor structures
JPH05315598A (ja) * 1992-05-08 1993-11-26 Fujitsu Ltd 半導体装置
US7440227B2 (en) * 2005-02-28 2008-10-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560963A (en) * 1968-06-27 1971-02-02 Theodore R Trilling Field effect a/d converter
US3593045A (en) * 1969-12-29 1971-07-13 Bell Telephone Labor Inc Multiaddress switch using a confined electron beam in a semiconductor
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
DE2804165C2 (de) * 1978-02-01 1982-11-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einem für die Stromführung geeigneten Kanal und Verfahren zum Betrieb dieser Halbleiteranordnung
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device

Also Published As

Publication number Publication date
US4563696A (en) 1986-01-07
CA1177583A (en) 1984-11-06
FR2498815A1 (fr) 1982-07-30
EP0058577B1 (fr) 1984-06-13
DE3260213D1 (en) 1984-07-19
EP0058577A1 (fr) 1982-08-25
FR2498815B1 (enExample) 1983-02-18
JPH0261146B2 (enExample) 1990-12-19

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