DE3236142C2 - - Google Patents

Info

Publication number
DE3236142C2
DE3236142C2 DE3236142A DE3236142A DE3236142C2 DE 3236142 C2 DE3236142 C2 DE 3236142C2 DE 3236142 A DE3236142 A DE 3236142A DE 3236142 A DE3236142 A DE 3236142A DE 3236142 C2 DE3236142 C2 DE 3236142C2
Authority
DE
Germany
Prior art keywords
pattern
mask
layer
area
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3236142A
Other languages
German (de)
English (en)
Other versions
DE3236142A1 (de
Inventor
Mamoru Nakasuji
Toshiaki Yokohama Jp Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3236142A1 publication Critical patent/DE3236142A1/de
Application granted granted Critical
Publication of DE3236142C2 publication Critical patent/DE3236142C2/de
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31779—Lithography by projection from patterned photocathode

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE19823236142 1981-10-31 1982-09-29 Musteruebertragungsmaske fuer ein elektronenstrahlprojektionssystem und verfahren zu ihrer herstellung Granted DE3236142A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56175445A JPS5877229A (ja) 1981-10-31 1981-10-31 パタ−ン転写用マスクおよびその製造方法

Publications (2)

Publication Number Publication Date
DE3236142A1 DE3236142A1 (de) 1983-05-19
DE3236142C2 true DE3236142C2 (OSRAM) 1987-08-20

Family

ID=15996201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823236142 Granted DE3236142A1 (de) 1981-10-31 1982-09-29 Musteruebertragungsmaske fuer ein elektronenstrahlprojektionssystem und verfahren zu ihrer herstellung

Country Status (3)

Country Link
JP (1) JPS5877229A (OSRAM)
DE (1) DE3236142A1 (OSRAM)
FR (1) FR2515873A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910000756B1 (en) * 1984-11-20 1991-02-06 Fujitsu Ltd Method for projection photoelectron image
JPS622536A (ja) * 1985-06-28 1987-01-08 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム露光装置用マスクおよびその製造方法
GB2180669A (en) * 1985-09-20 1987-04-01 Phillips Electronic And Associ An electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2446042C3 (de) * 1974-09-26 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von Masken für verkleinernde elektronenoptische Projektion
US4039810A (en) * 1976-06-30 1977-08-02 International Business Machines Corporation Electron projection microfabrication system
DE2835363A1 (de) * 1978-08-11 1980-03-13 Siemens Ag Verfahren zum uebertragen von strukturen fuer halbleiterschaltungen
US4241109A (en) * 1979-04-30 1980-12-23 Bell Telephone Laboratories, Incorporated Technique for altering the profile of grating relief patterns

Also Published As

Publication number Publication date
FR2515873B1 (OSRAM) 1984-07-06
JPS6222262B2 (OSRAM) 1987-05-16
FR2515873A1 (fr) 1983-05-06
DE3236142A1 (de) 1983-05-19
JPS5877229A (ja) 1983-05-10

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ

8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee