DE3222848A1 - Als avalanche-fotodetektor verwendbares halbleiterbauelement - Google Patents

Als avalanche-fotodetektor verwendbares halbleiterbauelement

Info

Publication number
DE3222848A1
DE3222848A1 DE19823222848 DE3222848A DE3222848A1 DE 3222848 A1 DE3222848 A1 DE 3222848A1 DE 19823222848 DE19823222848 DE 19823222848 DE 3222848 A DE3222848 A DE 3222848A DE 3222848 A1 DE3222848 A1 DE 3222848A1
Authority
DE
Germany
Prior art keywords
layer
indium phosphide
zone
semiconductor component
dipl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823222848
Other languages
German (de)
English (en)
Other versions
DE3222848C2 (enExample
Inventor
Stephen Ross 07928 Chatham N.J. Forrest
Ock-Ky 08807 Bridgewater N.J. Kim
Richard Grant 07920 Basking Ridge N.J. Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE3222848A1 publication Critical patent/DE3222848A1/de
Application granted granted Critical
Publication of DE3222848C2 publication Critical patent/DE3222848C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
DE19823222848 1981-06-19 1982-06-18 Als avalanche-fotodetektor verwendbares halbleiterbauelement Granted DE3222848A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/275,346 US4473835A (en) 1981-06-19 1981-06-19 Long wavelength avalanche photodetector

Publications (2)

Publication Number Publication Date
DE3222848A1 true DE3222848A1 (de) 1982-12-30
DE3222848C2 DE3222848C2 (enExample) 1988-03-31

Family

ID=23051901

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823222848 Granted DE3222848A1 (de) 1981-06-19 1982-06-18 Als avalanche-fotodetektor verwendbares halbleiterbauelement

Country Status (5)

Country Link
US (1) US4473835A (enExample)
JP (1) JPS582077A (enExample)
DE (1) DE3222848A1 (enExample)
FR (1) FR2508235B1 (enExample)
GB (1) GB2100928B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736878A (en) * 1980-08-18 1982-02-27 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor photodetector
JPS5861679A (ja) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 量子井戸層付アバランシ・ホトダイオ−ド
JPS5984589A (ja) * 1982-11-08 1984-05-16 Fujitsu Ltd アバランシフオトダイオード
US4631566A (en) * 1983-08-22 1986-12-23 At&T Bell Laboratories Long wavelength avalanche photodetector
US4586066A (en) * 1984-04-10 1986-04-29 Rca Inc. Avalanche photodetector
CA1228663A (en) * 1984-04-10 1987-10-27 Paul P. Webb Photodetector with isolated avalanche region
CA1228662A (en) * 1984-04-10 1987-10-27 Paul P. Webb Double mesa avalanche photodetector
CA1228661A (en) * 1984-04-10 1987-10-27 Rca Inc. Avalanche photodetector
US4597004A (en) * 1985-03-04 1986-06-24 Rca Corporation Photodetector
US5051804A (en) * 1989-12-01 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Photodetector having high speed and sensitivity
US10032950B2 (en) 2016-02-22 2018-07-24 University Of Virginia Patent Foundation AllnAsSb avalanche photodiode and related method thereof
US12074243B1 (en) 2023-08-24 2024-08-27 Amplification Technologies, Corp. Method for fabricating high-sensitivity photodetectors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995303A (en) * 1975-06-05 1976-11-30 Bell Telephone Laboratories, Incorporated Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector
US4122476A (en) * 1976-11-22 1978-10-24 International Business Machines Corporation Semiconductor heterostructure
US4144540A (en) * 1978-02-06 1979-03-13 The United States Of America As Represented By The Secretary Of The Navy Tunable infrared detector with narrow bandwidth
JPS5643781A (en) * 1979-09-17 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetecting element
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
US4383269A (en) * 1980-09-19 1983-05-10 Bell Telephone Laboratories, Incorporated Graded bandgap photodetector

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
Electronics Letters, Vol. 18, Nr. 22, 1982, S. 945-946 *
IEEE Electr. Dev. Lett. Vol. EDL 2, 1981, S. 179-191 *
IEEE J. of Quantum Electronics, Vol. QE-17, No. 2,Februar 1981, S. 232-238 *
IEEE J. of Quantum Electronics, Vol. QE-17, No. 2,Februar 1981, S. 243-250 *
IEEE J. of Quantum Electronics, Vol. QE-17, No. 2,Februar 1981, S. 255-259 *
IEEE J. of Quantum Electronics, Vol. QE-17, No. 2,S. 243-250 *
Japanese Journal of Applied Physics, Vol. 19, No. 6, Juni 1980, L. 277-L. 280 *
Proceedings of the IEEE, vol. 70, No. 1, Jan. 1982S. 13-25 *
Solid State Electronics, Vol. 18, 1975,S. 263-266 *
Solid State Electronics, Vol. 6, 1963, S. 121-131 *
Solid-State Electronics, Vol. 24, 1981, S. 421-424(beim DPA eingegangen am 18. Mai 1981) *

Also Published As

Publication number Publication date
JPH038117B2 (enExample) 1991-02-05
FR2508235A1 (fr) 1982-12-24
DE3222848C2 (enExample) 1988-03-31
US4473835A (en) 1984-09-25
GB2100928B (en) 1985-01-03
JPS582077A (ja) 1983-01-07
GB2100928A (en) 1983-01-06
FR2508235B1 (fr) 1985-12-13

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US

D2 Grant after examination
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN