DE3173587D1 - A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same - Google Patents

A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same

Info

Publication number
DE3173587D1
DE3173587D1 DE8181305142T DE3173587T DE3173587D1 DE 3173587 D1 DE3173587 D1 DE 3173587D1 DE 8181305142 T DE8181305142 T DE 8181305142T DE 3173587 T DE3173587 T DE 3173587T DE 3173587 D1 DE3173587 D1 DE 3173587D1
Authority
DE
Germany
Prior art keywords
electrodes
manufacturing
semiconductor device
same
conducting members
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181305142T
Other languages
German (de)
English (en)
Inventor
Yoko Wakui
Hiroaki Hachino
Mamoru Sawahata
Tasao Soga
Tomio Yasuda
Michio Ooue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3173587D1 publication Critical patent/DE3173587D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10W20/497—
    • H10W20/484—
    • H10W70/688—
    • H10W70/695—
    • H10W72/701—
    • H10W72/90—
    • H10W72/07554—
    • H10W72/077—
    • H10W72/547—
    • H10W72/5473—
    • H10W72/59—
    • H10W72/874—
DE8181305142T 1980-11-04 1981-10-29 A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same Expired DE3173587D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15391780A JPS5778173A (en) 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
DE3173587D1 true DE3173587D1 (en) 1986-03-06

Family

ID=15572915

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181305142T Expired DE3173587D1 (en) 1980-11-04 1981-10-29 A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same

Country Status (4)

Country Link
US (1) US4516149A (OSRAM)
EP (1) EP0051459B1 (OSRAM)
JP (1) JPS5778173A (OSRAM)
DE (1) DE3173587D1 (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3335836A1 (de) * 1983-10-01 1985-04-18 Brown, Boveri & Cie Ag, 6800 Mannheim Kontaktelektrode fuer leistungshalbleiterbauelement
JPS61218151A (ja) * 1985-03-23 1986-09-27 Hitachi Ltd 半導体装置
US4814855A (en) * 1986-04-29 1989-03-21 International Business Machines Corporation Balltape structure for tape automated bonding, multilayer packaging, universal chip interconnection and energy beam processes for manufacturing balltape
JPH0658959B2 (ja) * 1987-01-29 1994-08-03 富士電機株式会社 ゲ−ト・タ−ン・オフ・サイリスタ
EP0308667B1 (de) * 1987-09-23 1994-05-25 Siemens Aktiengesellschaft Absaugelektrode zur Verkürzung der Ausschaltzeit bei einem Halbleiterbauelement
JPH0267731A (ja) * 1988-09-02 1990-03-07 Toshiba Corp はんだバンプ形半導体装置とその製造方法
DE59209470D1 (de) * 1991-06-24 1998-10-01 Siemens Ag Halbleiterbauelement und Verfahren zu seiner Herstellung
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
DE69509428T2 (de) * 1994-03-24 1999-09-30 Fuji Electric Co Ltd Struktur einer Parallelschaltverbindung für flache Halbleiterschalter
US5670828A (en) * 1995-02-21 1997-09-23 Advanced Micro Devices, Inc. Tunneling technology for reducing intra-conductive layer capacitance
JPH09321175A (ja) * 1996-05-30 1997-12-12 Oki Electric Ind Co Ltd マイクロ波回路及びチップ
FR2759493B1 (fr) * 1997-02-12 2001-01-26 Motorola Semiconducteurs Dispositif de puissance a semiconducteur
GB0318146D0 (en) * 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL233303A (OSRAM) * 1957-11-30
DE1104618B (de) * 1959-09-23 1961-04-13 Siemens Ag Halbleiteranordnung mit einkristallinem Grundkoerper mit mindestens einem pn-UEbergang und mit mehreren Elektroden
US3355636A (en) * 1965-06-29 1967-11-28 Rca Corp High power, high frequency transistor
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3689991A (en) * 1968-03-01 1972-09-12 Gen Electric A method of manufacturing a semiconductor device utilizing a flexible carrier
US3943546A (en) * 1968-08-01 1976-03-09 Telefunken Patentverwertungsgesellschaft M.B.H. Transistor
GB1237148A (en) * 1968-08-20 1971-06-30 Standard Telephones Cables Ltd Improvements in transistors
US3559002A (en) * 1968-12-09 1971-01-26 Gen Electric Semiconductor device with multiple shock absorbing and passivation layers
DE1816439C3 (de) * 1968-12-21 1978-04-20 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Leistungstransistor
US4028722A (en) * 1970-10-13 1977-06-07 Motorola, Inc. Contact bonded packaged integrated circuit
US3808474A (en) * 1970-10-29 1974-04-30 Texas Instruments Inc Semiconductor devices
US3900771A (en) * 1970-11-25 1975-08-19 Gerhard Krause Transistor with high current density
NL163370C (nl) * 1972-04-28 1980-08-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.
US3781596A (en) * 1972-07-07 1973-12-25 R Galli Semiconductor chip carriers and strips thereof
DE2409312C3 (de) * 1974-02-27 1981-01-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung
JPS527573U (OSRAM) * 1975-07-01 1977-01-19
US4097890A (en) * 1976-06-23 1978-06-27 Hewlett-Packard Company Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
JPS5317274A (en) * 1976-08-02 1978-02-17 Hitachi Ltd Electrode structure of semiconductor element
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
JPS5512791A (en) * 1978-07-14 1980-01-29 Nec Corp Semiconductor device
US4240595A (en) * 1979-01-26 1980-12-23 National Tube & Reel Corporation End cap for cloth reel
JPS55115363A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Semiconductor device
US4380042A (en) * 1981-02-23 1983-04-12 Angelucci Sr Thomas L Printed circuit lead carrier tape

Also Published As

Publication number Publication date
EP0051459A3 (en) 1983-02-09
EP0051459A2 (en) 1982-05-12
US4516149A (en) 1985-05-07
JPS5778173A (en) 1982-05-15
EP0051459B1 (en) 1986-01-22
JPH0132670B2 (OSRAM) 1989-07-10

Similar Documents

Publication Publication Date Title
DE3174468D1 (en) Semiconductor device and method of manufacturing the same
DE3168092D1 (en) A method of manufacturing a semiconductor device, and a device so manufactured
DE3473384D1 (en) Semiconductor device and a method of manufacturing the same
EP0051488A3 (en) Semiconductor device and method for manufacturing the same
JPS56152272A (en) Method of manufacturing semiconductor device
JPS56140671A (en) Method of manufacturing semiconductor device
JPS5778136A (en) Method of fabricating semiconductor device
GB2106327B (en) Lead connection to hybrid integrated circuit devices and method of applying the same
EP0111899A3 (en) Semiconductor device and method of manufacturing the same
JPS56144545A (en) Method of manufacturing semiconductor device
DE3276556D1 (en) Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device
DE3463317D1 (en) Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method
JPS56144543A (en) Method of manufacturing semiconductor device
JPS56140668A (en) Method of manufacturing semiconductor device
JPS5772383A (en) Method of fabricating semiconductor device
JPS56114352A (en) Method of manufacturing semiconductor device
JPS571260A (en) Semiconductor device and method of manufacturing same
DE3173587D1 (en) A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same
DE3071207D1 (en) Semiconductor device comprising an interconnection electrode and method of manufacturing the same
GB2087147B (en) Methods of manufacturing semiconductor devices
DE3163207D1 (en) Semiconductor devices and their manufacture
DE3170633D1 (en) Method of manufacturing a semiconductor device with an interconnection electrode layer
JPS56108262A (en) Semiconductor device and method of manufacturing same
DE3468585D1 (en) Semiconductor device and a method of manufacturing the same
EP0171105A3 (en) Method of manufacturing a semiconductor device and device manufactured by the use of the method

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee