DE3172767D1 - Photovoltaic detector sensitive in the near infrared range - Google Patents

Photovoltaic detector sensitive in the near infrared range

Info

Publication number
DE3172767D1
DE3172767D1 DE8181401195T DE3172767T DE3172767D1 DE 3172767 D1 DE3172767 D1 DE 3172767D1 DE 8181401195 T DE8181401195 T DE 8181401195T DE 3172767 T DE3172767 T DE 3172767T DE 3172767 D1 DE3172767 D1 DE 3172767D1
Authority
DE
Germany
Prior art keywords
near infrared
infrared range
detector sensitive
photovoltaic detector
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181401195T
Other languages
German (de)
English (en)
Inventor
Guy Pichard
Michel Royer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Application granted granted Critical
Publication of DE3172767D1 publication Critical patent/DE3172767D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10P32/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H10P14/69—
    • H10P32/17—
DE8181401195T 1980-07-30 1981-07-24 Photovoltaic detector sensitive in the near infrared range Expired DE3172767D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8016788A FR2488048A1 (fr) 1980-07-30 1980-07-30 Detecteur photovoltaique sensible dans l'infrarouge proche

Publications (1)

Publication Number Publication Date
DE3172767D1 true DE3172767D1 (en) 1985-12-05

Family

ID=9244702

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181401195T Expired DE3172767D1 (en) 1980-07-30 1981-07-24 Photovoltaic detector sensitive in the near infrared range

Country Status (4)

Country Link
EP (1) EP0045258B1 (enExample)
JP (1) JPS5753633A (enExample)
DE (1) DE3172767D1 (enExample)
FR (1) FR2488048A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501915A1 (fr) * 1981-03-10 1982-09-17 Telecommunications Sa Photodetecteur sensible dans l'infra-rouge proche
FR2598558B1 (fr) * 1986-05-07 1988-11-10 Telecommunications Sa Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm
JP2798927B2 (ja) * 1988-03-28 1998-09-17 株式会社東芝 半導体受光装置及びその製造方法
EP0635892B1 (en) * 1992-07-21 2002-06-26 Raytheon Company Bake-stable HgCdTe photodetector and method for fabricating same
GB9921639D0 (en) * 1999-09-15 1999-11-17 Secr Defence Brit New organotellurium compound and new method for synthesising organotellurium compounds

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne

Also Published As

Publication number Publication date
EP0045258A3 (en) 1982-02-17
JPH0345331B2 (enExample) 1991-07-10
FR2488048B1 (enExample) 1983-12-23
JPS5753633A (en) 1982-03-30
EP0045258A2 (fr) 1982-02-03
EP0045258B1 (fr) 1985-10-30
FR2488048A1 (fr) 1982-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee