DE3167275D1 - Cold electron emission device - Google Patents

Cold electron emission device

Info

Publication number
DE3167275D1
DE3167275D1 DE8181102748T DE3167275T DE3167275D1 DE 3167275 D1 DE3167275 D1 DE 3167275D1 DE 8181102748 T DE8181102748 T DE 8181102748T DE 3167275 T DE3167275 T DE 3167275T DE 3167275 D1 DE3167275 D1 DE 3167275D1
Authority
DE
Germany
Prior art keywords
electron emission
emission device
cold electron
cold
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181102748T
Other languages
English (en)
Inventor
Jerome John Cuomo
Russell Warren Dreyfus
Jerry Mcpherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3167275D1 publication Critical patent/DE3167275D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
DE8181102748T 1980-06-02 1981-04-10 Cold electron emission device Expired DE3167275D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/155,729 US4352117A (en) 1980-06-02 1980-06-02 Electron source

Publications (1)

Publication Number Publication Date
DE3167275D1 true DE3167275D1 (en) 1985-01-03

Family

ID=22556567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181102748T Expired DE3167275D1 (en) 1980-06-02 1981-04-10 Cold electron emission device

Country Status (4)

Country Link
US (1) US4352117A (de)
EP (1) EP0041119B1 (de)
JP (1) JPS5713647A (de)
DE (1) DE3167275D1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2109159B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
GB8333130D0 (en) * 1983-12-12 1984-01-18 Gen Electric Co Plc Semiconductor devices
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8500413A (nl) * 1985-02-14 1986-09-01 Philips Nv Electronenbundelapparaat met een halfgeleider electronenemitter.
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
DE3751781T2 (de) * 1986-08-12 1996-10-17 Canon Kk Festkörper-Elektronenstrahlerzeuger
EP0259878B1 (de) * 1986-09-11 1997-05-14 Canon Kabushiki Kaisha Elektronenemittierendes Element
US5304815A (en) * 1986-09-11 1994-04-19 Canon Kabushiki Kaisha Electron emission elements
EP0329432B1 (de) * 1988-02-18 1996-05-15 Canon Kabushiki Kaisha Elektronenemitter
US5136212A (en) * 1988-02-18 1992-08-04 Canon Kabushiki Kaisha Electron emitting device, electron generator employing said electron emitting device, and method for driving said generator
US5359257A (en) * 1990-12-03 1994-10-25 Bunch Kyle J Ballistic electron, solid state cathode
JP2700065B2 (ja) * 1991-03-29 1998-01-19 浜松ホトニクス株式会社 光電面，その光電面を製造する方法およびその光電面を用いた光電変換管
US5336902A (en) * 1992-10-05 1994-08-09 Hamamatsu Photonics K.K. Semiconductor photo-electron-emitting device
US5315126A (en) * 1992-10-13 1994-05-24 Itt Corporation Highly doped surface layer for negative electron affinity devices
DE69316960T2 (de) * 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
JP3332661B2 (ja) 1994-07-15 2002-10-07 キヤノン株式会社 記録装置
US5686789A (en) 1995-03-14 1997-11-11 Osram Sylvania Inc. Discharge device having cathode with micro hollow array
US6033943A (en) * 1996-08-23 2000-03-07 Advanced Micro Devices, Inc. Dual gate oxide thickness integrated circuit and process for making same
US5789759A (en) * 1996-11-21 1998-08-04 Itt Industries, Inc. Cathode structure for reduced emission and robust handling properties
TW373210B (en) * 1997-02-24 1999-11-01 Koninkl Philips Electronics Nv Electron tube having a semiconductor cathode
US6051510A (en) * 1997-05-02 2000-04-18 Advanced Micro Devices, Inc. Method of using a hard mask to grow dielectrics with varying characteristics
US6037224A (en) * 1997-05-02 2000-03-14 Advanced Micro Devices, Inc. Method for growing dual oxide thickness using nitrided oxides for oxidation suppression
JPH1196896A (ja) * 1997-09-24 1999-04-09 Hamamatsu Photonics Kk 半導体光電面
SE0000115D0 (sv) * 2000-01-17 2000-01-17 Abb Ab A semiconductor device
US6861721B1 (en) * 2003-12-08 2005-03-01 Texas Instruments Incorporated Barrier region and method for wafer scale package (WCSP) devices
JP5083874B2 (ja) * 2007-07-06 2012-11-28 独立行政法人産業技術総合研究所 電子源

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA927468A (en) * 1968-08-12 1973-05-29 E. Simon Ralph Negative effective electron affinity emitters with drift fields using deep acceptor doping
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US3667007A (en) * 1970-02-25 1972-05-30 Rca Corp Semiconductor electron emitter
GB1335979A (en) * 1970-03-19 1973-10-31 Gen Electric Cold cathode structure
US3699404A (en) * 1971-02-24 1972-10-17 Rca Corp Negative effective electron affinity emitters with drift fields using deep acceptor doping
US3743910A (en) * 1971-08-20 1973-07-03 Cincinnati Milacron Inc Tracing feed rate control circuit
US3808477A (en) * 1971-12-17 1974-04-30 Gen Electric Cold cathode structure
FR2217805A1 (en) * 1973-02-13 1974-09-06 Labo Electronique Physique Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer
JPS5430274B2 (de) * 1973-06-28 1979-09-29
GB1476471A (en) * 1975-01-16 1977-06-16 Standard Telephones Cables Ltd Gallium arsenide photocathodes
US3972750A (en) * 1975-04-30 1976-08-03 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959037A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US4040079A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US4040074A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US4040080A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device

Also Published As

Publication number Publication date
US4352117A (en) 1982-09-28
JPH021327B2 (de) 1990-01-11
EP0041119B1 (de) 1984-11-21
JPS5713647A (en) 1982-01-23
EP0041119A1 (de) 1981-12-09

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee