DE3166687D1 - Semiconductor devices and use of said devices - Google Patents

Semiconductor devices and use of said devices

Info

Publication number
DE3166687D1
DE3166687D1 DE8181103731T DE3166687T DE3166687D1 DE 3166687 D1 DE3166687 D1 DE 3166687D1 DE 8181103731 T DE8181103731 T DE 8181103731T DE 3166687 T DE3166687 T DE 3166687T DE 3166687 D1 DE3166687 D1 DE 3166687D1
Authority
DE
Germany
Prior art keywords
devices
semiconductor
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181103731T
Other languages
English (en)
Inventor
Norman Braslau
John Lawrence Freehouf
George David Pettit
Hans Stephan Rupprecht
Jerry Mcpherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3166687D1 publication Critical patent/DE3166687D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DE8181103731T 1980-06-20 1981-05-15 Semiconductor devices and use of said devices Expired DE3166687D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/161,611 US4366493A (en) 1980-06-20 1980-06-20 Semiconductor ballistic transport device

Publications (1)

Publication Number Publication Date
DE3166687D1 true DE3166687D1 (en) 1984-11-22

Family

ID=22581916

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181103731T Expired DE3166687D1 (en) 1980-06-20 1981-05-15 Semiconductor devices and use of said devices

Country Status (4)

Country Link
US (1) US4366493A (de)
EP (1) EP0042489B1 (de)
JP (1) JPS5713774A (de)
DE (1) DE3166687D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2493604A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Transistors a effet de champ a grille ultra courte
FR2498815A1 (fr) * 1981-01-27 1982-07-30 Thomson Csf Dispositif semi-conducteur de deviation d'electrons du type " a transport balistique ", et procede de fabrication d'un tel dispositif
FR2520157B1 (fr) * 1982-01-18 1985-09-13 Labo Electronique Physique Dispositif semi-conducteur du genre transistor a heterojonction(s)
FR2525028A1 (fr) * 1982-04-09 1983-10-14 Chauffage Nouvelles Tech Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus
US4910562A (en) * 1982-04-26 1990-03-20 International Business Machines Corporation Field induced base transistor
US4532533A (en) * 1982-04-27 1985-07-30 International Business Machines Corporation Ballistic conduction semiconductor device
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
DE3380047D1 (en) * 1982-09-17 1989-07-13 France Etat Ballistic heterojunction bipolar transistor
US4672404A (en) * 1982-09-17 1987-06-09 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4672423A (en) * 1982-09-30 1987-06-09 International Business Machines Corporation Voltage controlled resonant transmission semiconductor device
JPS5982772A (ja) * 1982-11-02 1984-05-12 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ及びその製法
US4649405A (en) * 1984-04-10 1987-03-10 Cornell Research Foundation, Inc. Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices
GB2162370B (en) * 1984-07-26 1987-10-28 Japan Res Dev Corp Static induction transistor and integrated circuit comprising such a transistor
GB2163002B (en) * 1984-08-08 1989-01-05 Japan Res Dev Corp Tunnel injection static induction transistor and its integrated circuit
JP2589062B2 (ja) * 1984-08-08 1997-03-12 新技術開発事業団 熱電子放射型静電誘導サイリスタ
JPS61121369A (ja) * 1984-11-19 1986-06-09 Fujitsu Ltd 半導体装置
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
US4675601A (en) * 1985-11-27 1987-06-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions
JPS633460A (ja) * 1986-06-19 1988-01-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体装置
JPS6312177A (ja) * 1986-07-03 1988-01-19 Fujitsu Ltd 超高周波トランジスタ
JPS63276267A (ja) * 1987-05-08 1988-11-14 Fujitsu Ltd 半導体装置の製造方法
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device
US4847666A (en) * 1987-12-17 1989-07-11 General Motors Corporation Hot electron transistors
GB8809548D0 (en) * 1988-04-22 1988-05-25 Somekh R E Epitaxial barrier layers in thin film technology
EP0380168B1 (de) * 1989-01-24 1995-04-26 Laboratoires D'electronique Philips Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält
US6770536B2 (en) * 2002-10-03 2004-08-03 Agere Systems Inc. Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate
US20080103572A1 (en) 2006-10-31 2008-05-01 Medtronic, Inc. Implantable medical lead with threaded fixation
US9553163B2 (en) * 2012-04-19 2017-01-24 Carnegie Mellon University Metal-semiconductor-metal (MSM) heterojunction diode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381188A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Planar multi-channel field-effect triode
US3889284A (en) * 1974-01-15 1975-06-10 Us Army Avalanche photodiode with varying bandgap
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
US4110488A (en) * 1976-04-09 1978-08-29 Rca Corporation Method for making schottky barrier diodes
US4183033A (en) * 1978-03-13 1980-01-08 National Research Development Corporation Field effect transistors
US4263605A (en) * 1979-01-04 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted, improved ohmic contacts for GaAs semiconductor devices

Also Published As

Publication number Publication date
JPS6313355B2 (de) 1988-03-25
JPS5713774A (en) 1982-01-23
US4366493A (en) 1982-12-28
EP0042489A3 (en) 1982-06-16
EP0042489A2 (de) 1981-12-30
EP0042489B1 (de) 1984-10-17

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee