DE3070930D1 - Semiconductor prom device - Google Patents

Semiconductor prom device

Info

Publication number
DE3070930D1
DE3070930D1 DE8080304171T DE3070930T DE3070930D1 DE 3070930 D1 DE3070930 D1 DE 3070930D1 DE 8080304171 T DE8080304171 T DE 8080304171T DE 3070930 T DE3070930 T DE 3070930T DE 3070930 D1 DE3070930 D1 DE 3070930D1
Authority
DE
Germany
Prior art keywords
prom device
semiconductor
semiconductor prom
prom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080304171T
Other languages
English (en)
Inventor
Mitsuo Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3070930D1 publication Critical patent/DE3070930D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
DE8080304171T 1979-11-26 1980-11-20 Semiconductor prom device Expired DE3070930D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54152832A JPS5831677B2 (ja) 1979-11-26 1979-11-26 半導体記億装置

Publications (1)

Publication Number Publication Date
DE3070930D1 true DE3070930D1 (en) 1985-09-05

Family

ID=15549102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080304171T Expired DE3070930D1 (en) 1979-11-26 1980-11-20 Semiconductor prom device

Country Status (4)

Country Link
US (1) US4374430A (de)
EP (1) EP0029716B1 (de)
JP (1) JPS5831677B2 (de)
DE (1) DE3070930D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520461A (en) * 1979-01-24 1985-05-28 Xicor, Inc. Integrated high voltage distribution and control systems
JPS57100686A (en) * 1980-12-12 1982-06-22 Toshiba Corp Nonvolatile semiconductor memory
JPS57171840A (en) * 1981-04-16 1982-10-22 Toshiba Corp Driving circuit
US4394748A (en) * 1981-08-18 1983-07-19 Motorola, Inc. ROM Column select circuit and sense amplifier
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
US4673829A (en) * 1982-02-08 1987-06-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
JPS58169958A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd Ｍｉｓスタテイツク・ランダムアクセスメモリ
JPS59106152A (ja) * 1982-12-10 1984-06-19 Nec Corp 半導体装置
JPS60113397A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd プログラマブルリ−ドオンリメモリ装置
US4782247A (en) * 1984-08-08 1988-11-01 Fujitsu Limited Decoder circuit having a variable power supply
DE3583669D1 (de) * 1984-12-25 1991-09-05 Toshiba Kawasaki Kk Nichtfluechtige halbleiterspeicheranordnung.
JPS61151898A (ja) * 1984-12-26 1986-07-10 Fujitsu Ltd 半導体記憶装置におけるワ−ド線ドライバ回路
JPH0762960B2 (ja) * 1984-12-28 1995-07-05 日本電気株式会社 半導体回路
US4629972A (en) * 1985-02-11 1986-12-16 Advanced Micro Devices, Inc. Temperature insensitive reference voltage circuit
US4719598A (en) * 1985-05-31 1988-01-12 Harris Corporation Bit addressable programming arrangement
US4642798A (en) * 1985-10-01 1987-02-10 Intel Corporation CMOS E2 PROM decoding circuit
JPH0766674B2 (ja) * 1986-06-26 1995-07-19 日本電気株式会社 不揮発性半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683335A (en) * 1970-06-24 1972-08-08 Westinghouse Electric Corp Non-volatile memory element and array
US3649848A (en) * 1970-12-03 1972-03-14 Rca Corp Voltage translation circuit for mnos memory array
US3863230A (en) * 1973-07-18 1975-01-28 Intel Corp MOS memory decoder circuit
US4130890A (en) * 1977-06-08 1978-12-19 Itt Industries, Inc. Integrated DDC memory with bitwise erase
US4124900A (en) * 1977-09-29 1978-11-07 Westinghouse Electric Corp. Memory using interleaved rows to permit closer spacing
US4327424A (en) * 1980-07-17 1982-04-27 International Business Machines Corporation Read-only storage using enhancement-mode, depletion-mode or omitted gate field-effect transistors

Also Published As

Publication number Publication date
EP0029716A2 (de) 1981-06-03
US4374430A (en) 1983-02-15
EP0029716B1 (de) 1985-07-31
JPS5831677B2 (ja) 1983-07-07
JPS5677980A (en) 1981-06-26
EP0029716A3 (en) 1981-12-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee