DE3069316D1 - Cell state detection for binary signal storage device - Google Patents

Cell state detection for binary signal storage device

Info

Publication number
DE3069316D1
DE3069316D1 DE8080107630T DE3069316T DE3069316D1 DE 3069316 D1 DE3069316 D1 DE 3069316D1 DE 8080107630 T DE8080107630 T DE 8080107630T DE 3069316 T DE3069316 T DE 3069316T DE 3069316 D1 DE3069316 D1 DE 3069316D1
Authority
DE
Germany
Prior art keywords
storage device
state detection
binary signal
signal storage
cell state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080107630T
Other languages
English (en)
Inventor
John Dennis Zbrozek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3069316D1 publication Critical patent/DE3069316D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
DE8080107630T 1979-12-26 1980-12-04 Cell state detection for binary signal storage device Expired DE3069316D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/107,468 US4305139A (en) 1979-12-26 1979-12-26 State detection for storage cells

Publications (1)

Publication Number Publication Date
DE3069316D1 true DE3069316D1 (en) 1984-10-31

Family

ID=22316765

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080107630T Expired DE3069316D1 (en) 1979-12-26 1980-12-04 Cell state detection for binary signal storage device

Country Status (4)

Country Link
US (1) US4305139A (de)
EP (1) EP0031496B1 (de)
JP (1) JPS5942400B2 (de)
DE (1) DE3069316D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581548A (en) * 1983-03-15 1986-04-08 Harris Corporation Address decoder
US4899308A (en) * 1986-12-11 1990-02-06 Fairchild Semiconductor Corporation High density ROM in a CMOS gate array
JPH04195900A (ja) * 1990-11-27 1992-07-15 Nec Ic Microcomput Syst Ltd カレントミラー型センスアンプ
JP3109537B2 (ja) * 1991-07-12 2000-11-20 日本電気株式会社 読み出し専用半導体記憶装置
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
JPH06290591A (ja) * 1993-03-31 1994-10-18 Sony Corp 半導体不揮発性記憶装置
US6195027B1 (en) 1999-04-30 2001-02-27 International Business Machines Corporation Capacitive precharging and discharging network for converting N bit input into M bit output
US7652947B2 (en) * 2008-02-28 2010-01-26 International Business Machines Corporation Back-gate decode personalization

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739355A (en) * 1971-05-28 1973-06-12 Burroughs Corp Sense amplifier for high speed memory
US3706891A (en) * 1971-06-17 1972-12-19 Ibm A. c. stable storage cell
US3846768A (en) * 1972-12-29 1974-11-05 Ibm Fixed threshold variable threshold storage device for use in a semiconductor storage array
US3876887A (en) * 1973-07-18 1975-04-08 Intel Corp Mos amplifier
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
DE2553972C3 (de) * 1975-12-01 1979-03-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zur Überwachung der Funktion einer dynamischen Decodierschaltung
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4053873A (en) * 1976-06-30 1977-10-11 International Business Machines Corporation Self-isolating cross-coupled sense amplifier latch circuit
US4091360A (en) * 1976-09-01 1978-05-23 Bell Telephone Laboratories, Incorporated Dynamic precharge circuitry
US4082966A (en) * 1976-12-27 1978-04-04 Texas Instruments Incorporated Mos detector or sensing circuit
US4195357A (en) * 1978-06-15 1980-03-25 Texas Instruments Incorporated Median spaced dummy cell layout for MOS random access memory

Also Published As

Publication number Publication date
EP0031496B1 (de) 1984-09-26
EP0031496A2 (de) 1981-07-08
JPS5694587A (en) 1981-07-31
JPS5942400B2 (ja) 1984-10-15
EP0031496A3 (en) 1981-10-28
US4305139A (en) 1981-12-08

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee