DE3037876A1 - Verfahren zum herstellen eines feinen musters aus einem aluminiumfilm - Google Patents

Verfahren zum herstellen eines feinen musters aus einem aluminiumfilm

Info

Publication number
DE3037876A1
DE3037876A1 DE19803037876 DE3037876A DE3037876A1 DE 3037876 A1 DE3037876 A1 DE 3037876A1 DE 19803037876 DE19803037876 DE 19803037876 DE 3037876 A DE3037876 A DE 3037876A DE 3037876 A1 DE3037876 A1 DE 3037876A1
Authority
DE
Germany
Prior art keywords
aluminum film
aluminum
film
implanted
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19803037876
Other languages
German (de)
English (en)
Other versions
DE3037876C2 (enExample
Inventor
Haruhiko Takarazuka Hyogo Abe
Sotoji Osaka Asai
Hiroshi Kawanishi Hyogo Harada
Yoji Nishinomiya Hyogo Mashiko
Kazuo Amagasaki Hyogo Mizuguchi
Sumio Tokyo Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3037876A1 publication Critical patent/DE3037876A1/de
Application granted granted Critical
Publication of DE3037876C2 publication Critical patent/DE3037876C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE19803037876 1979-10-09 1980-10-07 Verfahren zum herstellen eines feinen musters aus einem aluminiumfilm Granted DE3037876A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54130391A JPS6059994B2 (ja) 1979-10-09 1979-10-09 アルミニウム膜またはアルミニウム合金膜の微細パタ−ン形成方法

Publications (2)

Publication Number Publication Date
DE3037876A1 true DE3037876A1 (de) 1981-04-23
DE3037876C2 DE3037876C2 (enExample) 1989-08-24

Family

ID=15033188

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803037876 Granted DE3037876A1 (de) 1979-10-09 1980-10-07 Verfahren zum herstellen eines feinen musters aus einem aluminiumfilm

Country Status (3)

Country Link
US (1) US4314874A (enExample)
JP (1) JPS6059994B2 (enExample)
DE (1) DE3037876A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0295581A1 (en) * 1987-06-19 1988-12-21 Tegal Corporation Process for etching aluminum in a plasma

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
US4609565A (en) * 1984-10-10 1986-09-02 Mobil Solar Energy Corporation Method of fabricating solar cells
WO1985002939A1 (en) * 1983-12-19 1985-07-04 Mobil Solar Energy Corporation Method of fabricating solar cells
US4619894A (en) * 1985-04-12 1986-10-28 Massachusetts Institute Of Technology Solid-transformation thermal resist
US4821085A (en) * 1985-05-01 1989-04-11 Texas Instruments Incorporated VLSI local interconnect structure
US5010032A (en) * 1985-05-01 1991-04-23 Texas Instruments Incorporated Process for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnects
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US6335062B1 (en) * 1994-09-13 2002-01-01 The United States Of America As Represented By The Secretary Of The Navy Reactive oxygen-assisted ion implantation into metals and products made therefrom
US6224738B1 (en) 1999-11-09 2001-05-01 Pacesetter, Inc. Method for a patterned etch with electrolytically grown mask
US6822931B2 (en) 2001-12-13 2004-11-23 Vision Works, Llc Timing system and device and method for making the same
US8717854B2 (en) 2002-12-13 2014-05-06 Vision Works Ip Corporation Environment dependent—temperature independent color changing label
US8435891B2 (en) 2011-06-02 2013-05-07 International Business Machines Corporation Converting metal mask to metal-oxide etch stop layer and related semiconductor structure
US9188962B2 (en) 2011-11-01 2015-11-17 Vision Works Ip Corporation Timing system and device and method for making the same
WO2016040075A1 (en) * 2014-09-08 2016-03-17 Vision Works Ip Corporation Indicators for external variables consisting of singular and multiple depletion cells
US10361121B2 (en) * 2016-05-13 2019-07-23 Intel Corporation Aluminum oxide for thermal management or adhesion
US10318604B2 (en) 2017-02-13 2019-06-11 Vision Works Ip Corporation Electronically readable system and device with changing codes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2046833B2 (de) * 1970-01-06 1977-12-29 International Business Machines Corp, Armonk, N.Y. (V.StA.) Verfahren zur herstellung elektrisch isolierter halbleiterzonen
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines
US4098637A (en) * 1975-09-03 1978-07-04 Siemens Aktiengesellschaft Process for the production of a planar conductor path system for integrated semiconductor circuits

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436327A (en) * 1966-07-18 1969-04-01 Collins Radio Co Selective sputtering rate circuit forming process
US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby
DE2723933A1 (de) * 1975-12-04 1978-06-01 Siemens Ag Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2046833B2 (de) * 1970-01-06 1977-12-29 International Business Machines Corp, Armonk, N.Y. (V.StA.) Verfahren zur herstellung elektrisch isolierter halbleiterzonen
US4098637A (en) * 1975-09-03 1978-07-04 Siemens Aktiengesellschaft Process for the production of a planar conductor path system for integrated semiconductor circuits
US4093503A (en) * 1977-03-07 1978-06-06 International Business Machines Corporation Method for fabricating ultra-narrow metallic lines

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0295581A1 (en) * 1987-06-19 1988-12-21 Tegal Corporation Process for etching aluminum in a plasma

Also Published As

Publication number Publication date
DE3037876C2 (enExample) 1989-08-24
JPS5655571A (en) 1981-05-16
JPS6059994B2 (ja) 1985-12-27
US4314874A (en) 1982-02-09

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee