DE2953410C2 - Verfahren zum Dotieren eines Halbleiterwafers durch Wärmegradient-Zonenschmelzen - Google Patents

Verfahren zum Dotieren eines Halbleiterwafers durch Wärmegradient-Zonenschmelzen

Info

Publication number
DE2953410C2
DE2953410C2 DE2953410T DE2953410T DE2953410C2 DE 2953410 C2 DE2953410 C2 DE 2953410C2 DE 2953410 T DE2953410 T DE 2953410T DE 2953410 T DE2953410 T DE 2953410T DE 2953410 C2 DE2953410 C2 DE 2953410C2
Authority
DE
Germany
Prior art keywords
wafer
doping
semiconductor
edge
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2953410T
Other languages
German (de)
English (en)
Other versions
DE2953410T1 (de
Inventor
Suei-Yuen Paul Trenton N.J. Lien
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2953410T1 publication Critical patent/DE2953410T1/de
Application granted granted Critical
Publication of DE2953410C2 publication Critical patent/DE2953410C2/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • H10P95/50—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Rectifiers (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
DE2953410T 1978-12-15 1979-11-26 Verfahren zum Dotieren eines Halbleiterwafers durch Wärmegradient-Zonenschmelzen Expired DE2953410C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/970,031 US4190467A (en) 1978-12-15 1978-12-15 Semiconductor device production
PCT/US1979/001017 WO1980001333A1 (en) 1978-12-15 1979-11-26 Semiconductor device production

Publications (2)

Publication Number Publication Date
DE2953410T1 DE2953410T1 (de) 1981-01-08
DE2953410C2 true DE2953410C2 (de) 1985-01-31

Family

ID=25516330

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2953410T Expired DE2953410C2 (de) 1978-12-15 1979-11-26 Verfahren zum Dotieren eines Halbleiterwafers durch Wärmegradient-Zonenschmelzen

Country Status (6)

Country Link
US (1) US4190467A (cg-RX-API-DMAC10.html)
JP (1) JPS5946090B2 (cg-RX-API-DMAC10.html)
DE (1) DE2953410C2 (cg-RX-API-DMAC10.html)
FR (1) FR2444338A1 (cg-RX-API-DMAC10.html)
GB (1) GB2057759B (cg-RX-API-DMAC10.html)
WO (1) WO1980001333A1 (cg-RX-API-DMAC10.html)

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US4625561A (en) * 1984-12-06 1986-12-02 Ford Motor Company Silicon capacitive pressure sensor and method of making
US6051483A (en) * 1996-11-12 2000-04-18 International Business Machines Corporation Formation of ultra-shallow semiconductor junction using microwave annealing
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US9640649B2 (en) * 2004-12-30 2017-05-02 Infineon Technologies Americas Corp. III-nitride power semiconductor with a field relaxation feature
JP2009522812A (ja) * 2006-01-09 2009-06-11 インターナショナル レクティファイアー コーポレイション 電界緩和機能を有するｉｉｉ族窒化物電力半導体
MX2011002852A (es) 2008-09-15 2011-08-17 Udt Sensors Inc Fotodiodo de espina de capa activa delgada con una capa n+ superficial y metodo para fabricacion del mismo.
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US20170211185A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2931117A1 (de) * 1978-09-13 1980-03-27 Gen Electric Thermische einlagerung von feinen leitern in einen festkoerper aus einem halbleitermaterial

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US3975213A (en) * 1973-10-30 1976-08-17 General Electric Company High voltage diodes
US3899361A (en) * 1973-10-30 1975-08-12 Gen Electric Stabilized droplet method of making deep diodes having uniform electrical properties
US3979230A (en) * 1973-10-30 1976-09-07 General Electric Company Method of making isolation grids in bodies of semiconductor material
US3982270A (en) * 1973-10-30 1976-09-21 General Electric Company Deep diode varactors
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material
US4011582A (en) * 1973-10-30 1977-03-08 General Electric Company Deep power diode
US3901736A (en) * 1973-10-30 1975-08-26 Gen Electric Method of making deep diode devices
US3898106A (en) * 1973-10-30 1975-08-05 Gen Electric High velocity thermomigration method of making deep diodes
US3895967A (en) * 1973-10-30 1975-07-22 Gen Electric Semiconductor device production
US3899362A (en) * 1973-10-30 1975-08-12 Gen Electric Thermomigration of metal-rich liquid wires through semiconductor materials
US3972742A (en) * 1973-10-30 1976-08-03 General Electric Company Deep power diode
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US3956026A (en) * 1973-10-30 1976-05-11 General Electric Company Making a deep diode varactor by thermal migration
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US3988764A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode solid state inductor coil
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US3936319A (en) * 1973-10-30 1976-02-03 General Electric Company Solar cell
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US3956023A (en) * 1973-10-30 1976-05-11 General Electric Company Process for making a deep power diode by thermal migration of dopant
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US3972741A (en) * 1974-04-29 1976-08-03 General Electric Company Multiple p-n junction formation with an alloy droplet
US3988762A (en) * 1974-05-28 1976-10-26 General Electric Company Minority carrier isolation barriers for semiconductor devices
US4063965A (en) * 1974-10-30 1977-12-20 General Electric Company Making deep power diodes
US3979820A (en) * 1974-10-30 1976-09-14 General Electric Company Deep diode lead throughs
US4091257A (en) * 1975-02-24 1978-05-23 General Electric Company Deep diode devices and method and apparatus
US4041278A (en) * 1975-05-19 1977-08-09 General Electric Company Heating apparatus for temperature gradient zone melting
US4010534A (en) * 1975-06-27 1977-03-08 General Electric Company Process for making a deep diode atomic battery
US4021269A (en) * 1975-11-26 1977-05-03 General Electric Company Post diffusion after temperature gradient zone melting
US4006040A (en) * 1975-12-31 1977-02-01 General Electric Company Semiconductor device manufacture
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
US3998661A (en) * 1975-12-31 1976-12-21 General Electric Company Uniform migration of an annular shaped molten zone through a solid body
US3998653A (en) * 1976-03-09 1976-12-21 General Electric Company Method for cleaning semiconductor devices
US4035199A (en) * 1976-08-30 1977-07-12 General Electric Company Process for thermal gradient zone melting utilizing a guard ring radiation coating
US4033786A (en) * 1976-08-30 1977-07-05 General Electric Company Temperature gradient zone melting utilizing selective radiation coatings
US4168992A (en) * 1978-12-07 1979-09-25 General Electric Company Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring
US4170491A (en) * 1978-12-07 1979-10-09 General Electric Company Near-surface thermal gradient enhancement with opaque coatings

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2931117A1 (de) * 1978-09-13 1980-03-27 Gen Electric Thermische einlagerung von feinen leitern in einen festkoerper aus einem halbleitermaterial

Also Published As

Publication number Publication date
JPS5946090B2 (ja) 1984-11-10
DE2953410T1 (de) 1981-01-08
US4190467A (en) 1980-02-26
JPS56500233A (cg-RX-API-DMAC10.html) 1981-02-26
FR2444338A1 (fr) 1980-07-11
FR2444338B1 (cg-RX-API-DMAC10.html) 1985-03-22
WO1980001333A1 (en) 1980-06-26
GB2057759B (en) 1983-01-26
GB2057759A (en) 1981-04-01

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee