JPS5946090B2 - 半導体ウエ−ハの処理方法 - Google Patents

半導体ウエ−ハの処理方法

Info

Publication number
JPS5946090B2
JPS5946090B2 JP55500264A JP50026479A JPS5946090B2 JP S5946090 B2 JPS5946090 B2 JP S5946090B2 JP 55500264 A JP55500264 A JP 55500264A JP 50026479 A JP50026479 A JP 50026479A JP S5946090 B2 JPS5946090 B2 JP S5946090B2
Authority
JP
Japan
Prior art keywords
wafer
semiconductor wafer
semiconductor
metal
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55500264A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56500233A (cg-RX-API-DMAC10.html
Inventor
リエン・スエイ−ユエン・ポ−ル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS56500233A publication Critical patent/JPS56500233A/ja
Publication of JPS5946090B2 publication Critical patent/JPS5946090B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • H10P95/50—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Rectifiers (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP55500264A 1978-12-15 1979-11-26 半導体ウエ−ハの処理方法 Expired JPS5946090B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/970,031 US4190467A (en) 1978-12-15 1978-12-15 Semiconductor device production
US000000970031 1978-12-15

Publications (2)

Publication Number Publication Date
JPS56500233A JPS56500233A (cg-RX-API-DMAC10.html) 1981-02-26
JPS5946090B2 true JPS5946090B2 (ja) 1984-11-10

Family

ID=25516330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55500264A Expired JPS5946090B2 (ja) 1978-12-15 1979-11-26 半導体ウエ−ハの処理方法

Country Status (6)

Country Link
US (1) US4190467A (cg-RX-API-DMAC10.html)
JP (1) JPS5946090B2 (cg-RX-API-DMAC10.html)
DE (1) DE2953410C2 (cg-RX-API-DMAC10.html)
FR (1) FR2444338A1 (cg-RX-API-DMAC10.html)
GB (1) GB2057759B (cg-RX-API-DMAC10.html)
WO (1) WO1980001333A1 (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4625561A (en) * 1984-12-06 1986-12-02 Ford Motor Company Silicon capacitive pressure sensor and method of making
US6051483A (en) * 1996-11-12 2000-04-18 International Business Machines Corporation Formation of ultra-shallow semiconductor junction using microwave annealing
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US9640649B2 (en) * 2004-12-30 2017-05-02 Infineon Technologies Americas Corp. III-nitride power semiconductor with a field relaxation feature
JP2009522812A (ja) * 2006-01-09 2009-06-11 インターナショナル レクティファイアー コーポレイション 電界緩和機能を有するｉｉｉ族窒化物電力半導体
MX2011002852A (es) 2008-09-15 2011-08-17 Udt Sensors Inc Fotodiodo de espina de capa activa delgada con una capa n+ superficial y metodo para fabricacion del mismo.
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US20170211185A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US3982268A (en) * 1973-10-30 1976-09-21 General Electric Company Deep diode lead throughs
US3975213A (en) * 1973-10-30 1976-08-17 General Electric Company High voltage diodes
US3899361A (en) * 1973-10-30 1975-08-12 Gen Electric Stabilized droplet method of making deep diodes having uniform electrical properties
US3979230A (en) * 1973-10-30 1976-09-07 General Electric Company Method of making isolation grids in bodies of semiconductor material
US3982270A (en) * 1973-10-30 1976-09-21 General Electric Company Deep diode varactors
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material
US4011582A (en) * 1973-10-30 1977-03-08 General Electric Company Deep power diode
US3901736A (en) * 1973-10-30 1975-08-26 Gen Electric Method of making deep diode devices
US3898106A (en) * 1973-10-30 1975-08-05 Gen Electric High velocity thermomigration method of making deep diodes
US3895967A (en) * 1973-10-30 1975-07-22 Gen Electric Semiconductor device production
US3899362A (en) * 1973-10-30 1975-08-12 Gen Electric Thermomigration of metal-rich liquid wires through semiconductor materials
US3972742A (en) * 1973-10-30 1976-08-03 General Electric Company Deep power diode
US3956024A (en) * 1973-10-30 1976-05-11 General Electric Company Process for making a semiconductor varistor embodying a lamellar structure
US3956026A (en) * 1973-10-30 1976-05-11 General Electric Company Making a deep diode varactor by thermal migration
US3988769A (en) * 1973-10-30 1976-10-26 General Electric Company High voltage diodes
US3988764A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode solid state inductor coil
US4075038A (en) * 1973-10-30 1978-02-21 General Electric Company Deep diode devices and method and apparatus
US3936319A (en) * 1973-10-30 1976-02-03 General Electric Company Solar cell
US3988768A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode silicon controlled rectifier
US3956023A (en) * 1973-10-30 1976-05-11 General Electric Company Process for making a deep power diode by thermal migration of dopant
US3988757A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode zeners
US3988760A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode bilateral semiconductor switch
US3902925A (en) * 1973-10-30 1975-09-02 Gen Electric Deep diode device and method
US3990093A (en) * 1973-10-30 1976-11-02 General Electric Company Deep buried layers for semiconductor devices
US3988770A (en) * 1973-12-14 1976-10-26 General Electric Company Deep finger diodes
US3977910A (en) * 1973-12-14 1976-08-31 General Electric Company Deep finger diodes
US3988766A (en) * 1974-04-29 1976-10-26 General Electric Company Multiple P-N junction formation with an alloy droplet
US3972741A (en) * 1974-04-29 1976-08-03 General Electric Company Multiple p-n junction formation with an alloy droplet
US3988762A (en) * 1974-05-28 1976-10-26 General Electric Company Minority carrier isolation barriers for semiconductor devices
US4063965A (en) * 1974-10-30 1977-12-20 General Electric Company Making deep power diodes
US3979820A (en) * 1974-10-30 1976-09-14 General Electric Company Deep diode lead throughs
US4091257A (en) * 1975-02-24 1978-05-23 General Electric Company Deep diode devices and method and apparatus
US4041278A (en) * 1975-05-19 1977-08-09 General Electric Company Heating apparatus for temperature gradient zone melting
US4010534A (en) * 1975-06-27 1977-03-08 General Electric Company Process for making a deep diode atomic battery
US4021269A (en) * 1975-11-26 1977-05-03 General Electric Company Post diffusion after temperature gradient zone melting
US4006040A (en) * 1975-12-31 1977-02-01 General Electric Company Semiconductor device manufacture
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
US3998661A (en) * 1975-12-31 1976-12-21 General Electric Company Uniform migration of an annular shaped molten zone through a solid body
US3998653A (en) * 1976-03-09 1976-12-21 General Electric Company Method for cleaning semiconductor devices
US4035199A (en) * 1976-08-30 1977-07-12 General Electric Company Process for thermal gradient zone melting utilizing a guard ring radiation coating
US4033786A (en) * 1976-08-30 1977-07-05 General Electric Company Temperature gradient zone melting utilizing selective radiation coatings
US4159213A (en) * 1978-09-13 1979-06-26 General Electric Company Straight, uniform thermalmigration of fine lines
US4168992A (en) * 1978-12-07 1979-09-25 General Electric Company Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring
US4170491A (en) * 1978-12-07 1979-10-09 General Electric Company Near-surface thermal gradient enhancement with opaque coatings

Also Published As

Publication number Publication date
DE2953410T1 (de) 1981-01-08
DE2953410C2 (de) 1985-01-31
US4190467A (en) 1980-02-26
JPS56500233A (cg-RX-API-DMAC10.html) 1981-02-26
FR2444338A1 (fr) 1980-07-11
FR2444338B1 (cg-RX-API-DMAC10.html) 1985-03-22
WO1980001333A1 (en) 1980-06-26
GB2057759B (en) 1983-01-26
GB2057759A (en) 1981-04-01

Similar Documents

Publication Publication Date Title
US4011582A (en) Deep power diode
US4670088A (en) Lateral epitaxial growth by seeded solidification
Biegelsen et al. Laser‐induced crystallization of silicon islands on amorphous substrates: Multilayer structures
JPS5946090B2 (ja) 半導体ウエ−ハの処理方法
JPS5814737B2 (ja) 半導体物質の基体に対する細線の移動法
US2802759A (en) Method for producing evaporation fused junction semiconductor devices
US4564403A (en) Single-crystal semiconductor devices and method for making them
US4135027A (en) Semiconductor element embodying an optical coating to enhance thermal gradient zone melting processing thereof
US3898106A (en) High velocity thermomigration method of making deep diodes
US3956023A (en) Process for making a deep power diode by thermal migration of dopant
US4159215A (en) Droplet migration doping using reactive carriers and dopants
EP0087426B1 (en) Lateral epitaxial growth by seeded solidification
JPS58147024A (ja) ラテラルエピタキシヤル成長法
US3910801A (en) High velocity thermal migration method of making deep diodes
CA1145859A (en) Photo-induced temperature gradient zone melting
US4012236A (en) Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation
US4585512A (en) Method for making seed crystals for single-crystal semiconductor devices
US3188244A (en) Method of forming pn junction in semiconductor material
US3972742A (en) Deep power diode
US3669763A (en) Traveling solvent method of growing silicon carbide crystals and junctions utilizing yttrium as the solvent
Cline Silicon thin films formed on an insulator by recrystallization
US4160679A (en) Migration of fine liquid wires by thermal gradient zone melting through doped surfaces
Eyer et al. Silicon sheets grown from powder layers by a zone melting process
JPH0355975B2 (cg-RX-API-DMAC10.html)
JP2692138B2 (ja) 単結晶薄膜の製造方法