DE2931901C2 - Monolithisch integrierter Schwellwertschalter - Google Patents
Monolithisch integrierter SchwellwertschalterInfo
- Publication number
- DE2931901C2 DE2931901C2 DE19792931901 DE2931901A DE2931901C2 DE 2931901 C2 DE2931901 C2 DE 2931901C2 DE 19792931901 DE19792931901 DE 19792931901 DE 2931901 A DE2931901 A DE 2931901A DE 2931901 C2 DE2931901 C2 DE 2931901C2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- collector
- differential amplifier
- circuit
- amplifier stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Manipulation Of Pulses (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792931901 DE2931901C2 (de) | 1979-08-07 | 1979-08-07 | Monolithisch integrierter Schwellwertschalter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792931901 DE2931901C2 (de) | 1979-08-07 | 1979-08-07 | Monolithisch integrierter Schwellwertschalter |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2931901A1 DE2931901A1 (de) | 1981-02-26 |
DE2931901C2 true DE2931901C2 (de) | 1987-03-19 |
Family
ID=6077781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19792931901 Expired DE2931901C2 (de) | 1979-08-07 | 1979-08-07 | Monolithisch integrierter Schwellwertschalter |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2931901C2 (US07368563-20080506-C00056.png) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE708711A (US07368563-20080506-C00056.png) * | 1967-12-29 | 1968-07-01 | ||
US4061932A (en) * | 1976-02-17 | 1977-12-06 | Bell Telephone Laboratories, Incorporated | Window comparator |
DE2748967C2 (de) * | 1977-11-02 | 1983-01-13 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Schaltungsanordnung für einen monolithisch integrierten Schwellwertschalter |
-
1979
- 1979-08-07 DE DE19792931901 patent/DE2931901C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2931901A1 (de) | 1981-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8120 | Willingness to grant licences paragraph 23 | ||
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |