DE2931649C2 - - Google Patents

Info

Publication number
DE2931649C2
DE2931649C2 DE2931649A DE2931649A DE2931649C2 DE 2931649 C2 DE2931649 C2 DE 2931649C2 DE 2931649 A DE2931649 A DE 2931649A DE 2931649 A DE2931649 A DE 2931649A DE 2931649 C2 DE2931649 C2 DE 2931649C2
Authority
DE
Germany
Prior art keywords
light
cathode
semiconductor switch
switch according
light guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2931649A
Other languages
German (de)
English (en)
Other versions
DE2931649A1 (de
Inventor
Lewis R. Greensburg Pa. Us Lowry Jun.
Paul G. Pittsburgh Pa. Us Mcmullin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/930,762 external-priority patent/US4301462A/en
Priority claimed from US05/932,992 external-priority patent/US4186409A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2931649A1 publication Critical patent/DE2931649A1/de
Application granted granted Critical
Publication of DE2931649C2 publication Critical patent/DE2931649C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Optical Couplings Of Light Guides (AREA)
DE19792931649 1978-08-03 1979-08-03 Lichtaktivierter halbleiterschalter Granted DE2931649A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/930,762 US4301462A (en) 1978-08-03 1978-08-03 Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
US05/932,992 US4186409A (en) 1978-08-11 1978-08-11 Light activated silicon switch

Publications (2)

Publication Number Publication Date
DE2931649A1 DE2931649A1 (de) 1980-02-21
DE2931649C2 true DE2931649C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-02-14

Family

ID=27129997

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792931649 Granted DE2931649A1 (de) 1978-08-03 1979-08-03 Lichtaktivierter halbleiterschalter

Country Status (5)

Country Link
BR (1) BR7904830A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2931649A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2432771A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2027991B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN152332B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897864A (ja) * 1981-12-07 1983-06-10 Mitsubishi Electric Corp 光トリガサイリスタ
GB2127220B (en) * 1982-08-31 1986-04-23 Tokyo Shibaura Electric Co Light-triggered semiconductor device and light guide thereto
DE4300765C1 (de) * 1993-01-14 1993-12-23 Bosch Gmbh Robert Verfahren zum Planarisieren grabenförmiger Strukturen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE339717B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1968-04-26 1971-10-18 Asea Ab
DE2320459A1 (de) * 1972-04-28 1973-11-15 Westinghouse Electric Corp Auf strahlung ansprechende anordnung mit einem durch licht aktivierten schaltelement
FR2226754B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-04-20 1975-08-22 Thomson Csf
FR2253277B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-11-30 1977-08-12 Silec Semi Conducteurs
JPS583386B2 (ja) * 1975-10-11 1983-01-21 株式会社日立製作所 ソウホウコウセイホトサイリスタ
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
FR2426271A1 (fr) * 1978-05-18 1979-12-14 Thomson Csf Procede d'assemblage precis de " lasers " a semi-conducteur et de fibres optiques

Also Published As

Publication number Publication date
FR2432771A1 (fr) 1980-02-29
BR7904830A (pt) 1980-04-29
GB2027991A (en) 1980-02-27
IN152332B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-12-24
FR2432771B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1985-04-12
GB2027991B (en) 1983-04-27
DE2931649A1 (de) 1980-02-21

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee