FR2432771A1 - Connecteur semi-conducteur sensible a la lumiere, perfectionne - Google Patents

Connecteur semi-conducteur sensible a la lumiere, perfectionne

Info

Publication number
FR2432771A1
FR2432771A1 FR7919839A FR7919839A FR2432771A1 FR 2432771 A1 FR2432771 A1 FR 2432771A1 FR 7919839 A FR7919839 A FR 7919839A FR 7919839 A FR7919839 A FR 7919839A FR 2432771 A1 FR2432771 A1 FR 2432771A1
Authority
FR
France
Prior art keywords
silicon wafer
light
light sensitive
arrangement
improved light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7919839A
Other languages
English (en)
French (fr)
Other versions
FR2432771B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/930,762 external-priority patent/US4301462A/en
Priority claimed from US05/932,992 external-priority patent/US4186409A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2432771A1 publication Critical patent/FR2432771A1/fr
Application granted granted Critical
Publication of FR2432771B1 publication Critical patent/FR2432771B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Optical Couplings Of Light Guides (AREA)
FR7919839A 1978-08-03 1979-08-02 Connecteur semi-conducteur sensible a la lumiere, perfectionne Granted FR2432771A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/930,762 US4301462A (en) 1978-08-03 1978-08-03 Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
US05/932,992 US4186409A (en) 1978-08-11 1978-08-11 Light activated silicon switch

Publications (2)

Publication Number Publication Date
FR2432771A1 true FR2432771A1 (fr) 1980-02-29
FR2432771B1 FR2432771B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1985-04-12

Family

ID=27129997

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919839A Granted FR2432771A1 (fr) 1978-08-03 1979-08-02 Connecteur semi-conducteur sensible a la lumiere, perfectionne

Country Status (5)

Country Link
BR (1) BR7904830A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2931649A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2432771A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2027991B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN152332B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897864A (ja) * 1981-12-07 1983-06-10 Mitsubishi Electric Corp 光トリガサイリスタ
GB2127220B (en) * 1982-08-31 1986-04-23 Tokyo Shibaura Electric Co Light-triggered semiconductor device and light guide thereto
DE4300765C1 (de) * 1993-01-14 1993-12-23 Bosch Gmbh Robert Verfahren zum Planarisieren grabenförmiger Strukturen

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2006970A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1968-04-26 1970-01-02 Asea Ab
FR2226754A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-04-20 1974-11-15 Thomson Csf
FR2253277A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-11-30 1975-06-27 Silec Semi Conducteurs
DE2645513A1 (de) * 1975-10-11 1977-04-14 Hitachi Ltd Zweirichtungs-photothyristor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2320459A1 (de) * 1972-04-28 1973-11-15 Westinghouse Electric Corp Auf strahlung ansprechende anordnung mit einem durch licht aktivierten schaltelement
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
FR2426271A1 (fr) * 1978-05-18 1979-12-14 Thomson Csf Procede d'assemblage precis de " lasers " a semi-conducteur et de fibres optiques

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2006970A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1968-04-26 1970-01-02 Asea Ab
GB1254634A (en) * 1968-04-26 1971-11-24 Asea Ab Improved thyristor arrangement
FR2226754A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-04-20 1974-11-15 Thomson Csf
FR2253277A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-11-30 1975-06-27 Silec Semi Conducteurs
DE2645513A1 (de) * 1975-10-11 1977-04-14 Hitachi Ltd Zweirichtungs-photothyristor
US4110781A (en) * 1975-10-11 1978-08-29 Hitachi, Ltd. Bidirectional grooved thyristor fired by activation of the beveled surfaces
US4216487A (en) * 1975-10-11 1980-08-05 Hitachi, Ltd. Bidirectional light-activated thyristor having substrate optical isolation

Also Published As

Publication number Publication date
BR7904830A (pt) 1980-04-29
GB2027991A (en) 1980-02-27
DE2931649C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-02-14
IN152332B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-12-24
FR2432771B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1985-04-12
GB2027991B (en) 1983-04-27
DE2931649A1 (de) 1980-02-21

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Legal Events

Date Code Title Description
ST Notification of lapse