DE2920673C2 - Schichtbildende Lösung - Google Patents
Schichtbildende LösungInfo
- Publication number
- DE2920673C2 DE2920673C2 DE2920673A DE2920673A DE2920673C2 DE 2920673 C2 DE2920673 C2 DE 2920673C2 DE 2920673 A DE2920673 A DE 2920673A DE 2920673 A DE2920673 A DE 2920673A DE 2920673 C2 DE2920673 C2 DE 2920673C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- forming solution
- glycol
- solution according
- boiling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 19
- 238000009835 boiling Methods 0.000 claims description 9
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229920001451 polypropylene glycol Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 150000003609 titanium compounds Chemical class 0.000 claims description 3
- 239000008346 aqueous phase Substances 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 230000002378 acidificating effect Effects 0.000 claims 1
- 229920001223 polyethylene glycol Polymers 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 18
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- -1 acetate compound Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 235000019445 benzyl alcohol Nutrition 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2920673A DE2920673C2 (de) | 1979-05-22 | 1979-05-22 | Schichtbildende Lösung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2920673A DE2920673C2 (de) | 1979-05-22 | 1979-05-22 | Schichtbildende Lösung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2920673A1 DE2920673A1 (de) | 1980-11-27 |
| DE2920673C2 true DE2920673C2 (de) | 1987-01-15 |
Family
ID=6071395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2920673A Expired DE2920673C2 (de) | 1979-05-22 | 1979-05-22 | Schichtbildende Lösung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2920673C2 (US07166745-20070123-C00016.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5777044A (en) * | 1980-10-30 | 1982-05-14 | Central Glass Co Ltd | Manufacture of glass from metallic alcoholate |
| DE3704518A1 (de) * | 1987-02-13 | 1988-08-25 | Hoechst Ag | Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2280974A1 (fr) * | 1974-08-01 | 1976-02-27 | Silec Semi Conducteurs | Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus |
-
1979
- 1979-05-22 DE DE2920673A patent/DE2920673C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2920673A1 (de) | 1980-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69214683T2 (de) | Halbleiterbauelement mit einem auf TEOS-Basis aufgeschleuderten Glas und Verfahren zu dessen Herstellung | |
| DE69304016T2 (de) | Reflektion verringernde Schicht und Verfahren für deren Herstellung auf einem Glassubstrat | |
| EP1342702B1 (de) | Glaskörper mit poröser Beschichtung | |
| DE69305318T2 (de) | Verfahren zur Herstellung eines Siliziumoxid-Filmes | |
| DE2338079A1 (de) | Verfahren zur herstellung einer als fluessige silikatquelle dienenden loesung | |
| DE19509203A1 (de) | Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
| DE69311184T2 (de) | Halbleitervorrichtung samt Herstellungsverfahren | |
| DE2917836A1 (de) | Verfahren zur herstellung eines gegenueber ultraviolettem licht stabilisierten polycarbonatgegenstandes | |
| EP0897898A2 (de) | Verfahren zur Abscheidung optischer Schichten | |
| DE60132914T2 (de) | Niedertemperaturverfahren zur Herstellung einer Antireflexionsbeschichtung | |
| DE2439300A1 (de) | Verfahren zum aetzen abgeschraegter raender, insbesondere an siliziumoxidschichten | |
| DE2738044A1 (de) | Verfahren zum herstellen einer linse aus einem synthetischen polymer mit einem antireflektions-ueberzug | |
| EP0830324B1 (de) | Verfahren zur herstellung von glasschichten zum zwecke des anodischen bondens | |
| DE3490105T1 (de) | Verbesserungen an Belägen, die geeignet sind, hohen thermischen Belastungen zu widerstehen, und insbesondere an Belägen für Satelliten und Raumschiffe, sowie Verfahren zur Herstellung dieser Beläge | |
| DE2920673C2 (de) | Schichtbildende Lösung | |
| DE2720639C2 (de) | Glas, verwendbar zur Passivierung von Halbleitervorrichtungen und Verfahren zu seiner Herstellung | |
| DE2224515B2 (de) | Verfahren zum verdichten von silikatglaesern | |
| DE3537626A1 (de) | Beschichtungsloesungen | |
| DE19828231A1 (de) | Verfahren zur Abscheidung optischer Schichten | |
| DE2148120B2 (de) | Verfahren zum Niederschlagen von Glasfilmen | |
| DE19540894B4 (de) | Verfahren zur Verhinderung der Absorption von Feuchtigkeit in eine Störstellen enthaltende Isolationsschicht | |
| DE2928266A1 (de) | Schichtbildende loesung | |
| DE2810378C2 (US07166745-20070123-C00016.png) | ||
| DE69625679T2 (de) | Verfahren zur herstellung einer halbleiteranordnung | |
| DE3030298C2 (US07166745-20070123-C00016.png) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OF | Willingness to grant licences before publication of examined application | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |