DE2862447D1 - Process for the formation of a masking layer on a substrate so as to obtain a mask - Google Patents

Process for the formation of a masking layer on a substrate so as to obtain a mask

Info

Publication number
DE2862447D1
DE2862447D1 DE7878430023T DE2862447T DE2862447D1 DE 2862447 D1 DE2862447 D1 DE 2862447D1 DE 7878430023 T DE7878430023 T DE 7878430023T DE 2862447 T DE2862447 T DE 2862447T DE 2862447 D1 DE2862447 D1 DE 2862447D1
Authority
DE
Germany
Prior art keywords
mask
formation
substrate
masking layer
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7878430023T
Other languages
German (de)
English (en)
Inventor
Constantino Lapadula
Burn Jeng Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE2862447D1 publication Critical patent/DE2862447D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE7878430023T 1977-12-30 1978-12-08 Process for the formation of a masking layer on a substrate so as to obtain a mask Expired DE2862447D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/866,191 US4211834A (en) 1977-12-30 1977-12-30 Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask

Publications (1)

Publication Number Publication Date
DE2862447D1 true DE2862447D1 (en) 1984-11-15

Family

ID=25347109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7878430023T Expired DE2862447D1 (en) 1977-12-30 1978-12-08 Process for the formation of a masking layer on a substrate so as to obtain a mask

Country Status (4)

Country Link
US (1) US4211834A (en, 2012)
EP (1) EP0002999B1 (en, 2012)
JP (1) JPS5492801A (en, 2012)
DE (1) DE2862447D1 (en, 2012)

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US4329410A (en) * 1979-12-26 1982-05-11 The Perkin-Elmer Corporation Production of X-ray lithograph masks
JPS5694353A (en) * 1979-12-28 1981-07-30 Fujitsu Ltd Micropattern forming method
US4321317A (en) * 1980-04-28 1982-03-23 General Motors Corporation High resolution lithography system for microelectronic fabrication
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method
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US4529682A (en) * 1981-06-22 1985-07-16 Philip A. Hunt Chemical Corporation Positive photoresist composition with cresol-formaldehyde novolak resins
US4392298A (en) * 1981-07-27 1983-07-12 Bell Telephone Laboratories, Incorporated Integrated circuit device connection process
US4379826A (en) * 1981-08-31 1983-04-12 International Business Machines Corporation Positive electron beam resists of ortho chloro substituted phenol or cresol condensed with formaldehyde
US4410611A (en) * 1981-08-31 1983-10-18 General Motors Corporation Hard and adherent layers from organic resin coatings
US4394437A (en) * 1981-09-24 1983-07-19 International Business Machines Corporation Process for increasing resolution of photolithographic images
FR2519157B1 (fr) * 1981-12-30 1987-07-31 Labo Electronique Physique Procede pour la realisation de motifs submicroniques et motifs ainsi obtenus
EP0104235A4 (en) * 1982-03-29 1984-09-14 Motorola Inc METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS.
NL8203521A (nl) * 1982-09-10 1984-04-02 Philips Nv Werkwijze voor het vervaardigen van een inrichting.
JPS5955434A (ja) * 1982-09-24 1984-03-30 Fujitsu Ltd ポジ型レジストパターンの形成方法
JPS59124133A (ja) * 1982-12-30 1984-07-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ネガテイブ型レジスト像の形成方法
JPH0664341B2 (ja) * 1983-01-24 1994-08-22 ウエスターン エレクトリック カムパニー，インコーポレーテッド 半導体デバイスの製作法
US4609615A (en) * 1983-03-31 1986-09-02 Oki Electric Industry Co., Ltd. Process for forming pattern with negative resist using quinone diazide compound
GB2152223B (en) * 1983-11-28 1987-01-14 Fusion Semiconductor Systems Process for imaging resist materials
US4540636A (en) * 1983-12-27 1985-09-10 General Motors Corporation Metal bearing element with a score-resistant coating
US4567132A (en) * 1984-03-16 1986-01-28 International Business Machines Corporation Multi-level resist image reversal lithography process
US4578344A (en) * 1984-12-20 1986-03-25 General Electric Company Photolithographic method using a two-layer photoresist and photobleachable film
US4828960A (en) * 1985-01-07 1989-05-09 Honeywell Inc. Reflection limiting photoresist composition with two azo dyes
EP0197519A3 (en) * 1985-04-10 1989-01-11 International Business Machines Corporation Process for masking and resist formation
JPH07113771B2 (ja) * 1985-09-05 1995-12-06 松下電子工業株式会社 基板上への樹脂パタ−ンの形成方法
US4806453A (en) * 1986-05-07 1989-02-21 Shipley Company Inc. Positive acting bilayer photoresist development
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
US4970287A (en) * 1987-11-23 1990-11-13 Olin Hunt Specialty Products Inc. Thermally stable phenolic resin compositions with ortho, ortho methylene linkage
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
US5024921A (en) * 1987-11-23 1991-06-18 Ocg Microelectronic Materials, Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin used in a method of forming a positive photoresist image
US4835086A (en) * 1988-02-12 1989-05-30 Hoechst Celanese Corporation Polysulfone barrier layer for bi-level photoresists
US5258236A (en) * 1991-05-03 1993-11-02 Ibm Corporation Multi-layer thin film structure and parallel processing method for fabricating same
US5227280A (en) * 1991-09-04 1993-07-13 International Business Machines Corporation Resists with enhanced sensitivity and contrast
US6756181B2 (en) 1993-06-25 2004-06-29 Polyfibron Technologies, Inc. Laser imaged printing plates
US6916596B2 (en) 1993-06-25 2005-07-12 Michael Wen-Chein Yang Laser imaged printing plates
KR0156316B1 (ko) * 1995-09-13 1998-12-01 김광호 반도체장치의 패턴 형성방법
US6312872B1 (en) 1997-10-24 2001-11-06 Macdermid Graphic Arts Composite relief image printing plates
US5846691A (en) 1996-07-08 1998-12-08 Polyfibron Technologies, Inc. Composite relief image printing plates and methods for preparing same
DE69724159T2 (de) * 1997-09-19 2004-05-06 International Business Machines Corp. Optische lithographie mit extrem hoher auflösung
GB0018629D0 (en) 2000-07-29 2000-09-13 Secr Defence Process for making a periodic profile
US6699641B1 (en) 2001-12-12 2004-03-02 Advanced Micro Devices, Inc. Photosensitive bottom anti-reflective coating
US7796885B2 (en) * 2002-11-05 2010-09-14 Lightfleet Corporation Distribution optical elements and compound collecting lenses for broadcast optical interconnect
EP1563356B1 (en) * 2002-11-05 2018-05-16 Lightfleet Corporation Optical fan-out and broadcast interconnect
US7970279B2 (en) * 2002-11-05 2011-06-28 Lightfleet Corporation N-way serial-channel interconnect
US20080028246A1 (en) * 2006-07-31 2008-01-31 Witham Timothy D Self-monitoring and self-adjusting power consumption computer control system
US8000229B2 (en) * 2007-02-07 2011-08-16 Lightfleet Corporation All-to-all interconnect fabric generated monotonically increasing identifier
WO2008109061A2 (en) 2007-03-01 2008-09-12 Lightfleet Corporation Time domain symbols
TWI335490B (en) * 2007-06-01 2011-01-01 Univ Nat Cheng Kung Nano-imprinting process
US20100166430A1 (en) * 2008-12-26 2010-07-01 Steve Alten Broadcast optical interconnect using a MEMS mirror
TW202303301A (zh) * 2021-05-10 2023-01-16 美商應用材料股份有限公司 用於灰階微影術的方法以及設備

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US2702243A (en) * 1950-06-17 1955-02-15 Azoplate Corp Light-sensitive photographic element and process of producing printing plates
US2892712A (en) * 1954-04-23 1959-06-30 Du Pont Process for preparing relief images
NL130926C (en, 2012) * 1959-09-04
GB1143611A (en, 2012) * 1965-03-22
FR1530266A (fr) * 1966-07-08 1968-06-21 Kalle Ag Procédé et matériel pour la duplication de films à l'argent
US3639185A (en) * 1969-06-30 1972-02-01 Ibm Novel etchant and process for etching thin metal films
US3647438A (en) * 1969-12-29 1972-03-07 Rca Corp Method of making high area density array photomasks having matching registry
US3661582A (en) * 1970-03-23 1972-05-09 Western Electric Co Additives to positive photoresists which increase the sensitivity thereof
US3759711A (en) * 1970-09-16 1973-09-18 Eastman Kodak Co Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
UST900009I4 (en) 1971-08-23 1972-07-18 Iis? available copy
AT333795B (de) * 1972-10-04 1976-12-10 Zimmer Peter Verfahren zur herstellung von druckformen
GB1493111A (en) * 1974-02-19 1977-11-23 Agfa Gevaert Production of photomasks
US3884696A (en) * 1974-03-05 1975-05-20 Bell Telephone Labor Inc Positive photoresist comprising polysulfones formed by reacting vinyl aromatic hydrocarbons with sulfur dioxide
US4078098A (en) * 1974-05-28 1978-03-07 International Business Machines Corporation High energy radiation exposed positive resist mask process
US4022932A (en) * 1975-06-09 1977-05-10 International Business Machines Corporation Resist reflow method for making submicron patterned resist masks

Also Published As

Publication number Publication date
EP0002999A3 (en) 1979-07-25
US4211834A (en) 1980-07-08
JPS6113746B2 (en, 2012) 1986-04-15
JPS5492801A (en) 1979-07-23
EP0002999A2 (fr) 1979-07-11
EP0002999B1 (fr) 1984-10-10

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee