DE2746335C2 - - Google Patents
Info
- Publication number
- DE2746335C2 DE2746335C2 DE2746335A DE2746335A DE2746335C2 DE 2746335 C2 DE2746335 C2 DE 2746335C2 DE 2746335 A DE2746335 A DE 2746335A DE 2746335 A DE2746335 A DE 2746335A DE 2746335 C2 DE2746335 C2 DE 2746335C2
- Authority
- DE
- Germany
- Prior art keywords
- charge transfer
- channel
- charge
- semiconductor substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51123189A JPS606101B2 (ja) | 1976-10-14 | 1976-10-14 | 電荷転送装置の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2746335A1 DE2746335A1 (de) | 1978-04-27 |
| DE2746335C2 true DE2746335C2 (US20100056889A1-20100304-C00004.png) | 1989-06-01 |
Family
ID=14854384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772746335 Granted DE2746335A1 (de) | 1976-10-14 | 1977-10-14 | Verfahren zur herstellung einer ladungsuebertragungsvorrichtung |
Country Status (7)
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5217771A (en) * | 1975-07-31 | 1977-02-09 | Sony Corp | Charge transfer device |
| CA1138992A (en) * | 1978-06-02 | 1983-01-04 | Sony Corporation | Charge transfer device |
| US4692993A (en) * | 1978-12-05 | 1987-09-15 | Clark Marion D | Schottky barrier charge coupled device (CCD) manufacture |
| US4345365A (en) * | 1980-10-06 | 1982-08-24 | Ncr Corporation | Method for fabricating an integrated circuit |
| DE3037744A1 (de) * | 1980-10-06 | 1982-05-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer monolithisch integrierten zwei-transistor-speicherzelle in mos-technik |
| US4360963A (en) * | 1981-07-31 | 1982-11-30 | Rca Corporation | Method of making CCD imagers with reduced defects |
| JPS58212176A (ja) * | 1982-06-02 | 1983-12-09 | Nec Corp | 電荷転送装置 |
| FR2578683B1 (fr) * | 1985-03-08 | 1987-08-28 | Thomson Csf | Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede |
| US4607429A (en) * | 1985-03-29 | 1986-08-26 | Rca Corporation | Method of making a charge-coupled device image sensor |
| JP2508668B2 (ja) * | 1986-11-10 | 1996-06-19 | ソニー株式会社 | 電荷転送装置 |
| US4910569A (en) * | 1988-08-29 | 1990-03-20 | Eastman Kodak Company | Charge-coupled device having improved transfer efficiency |
| JP2855291B2 (ja) * | 1991-03-07 | 1999-02-10 | 富士写真フイルム株式会社 | 固体撮像装置 |
| DE19622276C2 (de) * | 1996-06-03 | 1998-07-09 | Siemens Ag | Halbleiterstruktur für einen MOS-Transistor und Verfahren zur Herstellung der Halbleiterstruktur |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3873371A (en) * | 1972-11-07 | 1975-03-25 | Hughes Aircraft Co | Small geometry charge coupled device and process for fabricating same |
| FR2257145B1 (US20100056889A1-20100304-C00004.png) * | 1974-01-04 | 1976-11-26 | Commissariat Energie Atomique | |
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| US4035906A (en) * | 1975-07-23 | 1977-07-19 | Texas Instruments Incorporated | Silicon gate CCD structure |
| JPS5217771A (en) * | 1975-07-31 | 1977-02-09 | Sony Corp | Charge transfer device |
-
1976
- 1976-10-14 JP JP51123189A patent/JPS606101B2/ja not_active Expired
-
1977
- 1977-10-12 GB GB42493/77A patent/GB1578949A/en not_active Expired
- 1977-10-12 US US05/841,551 patent/US4179793A/en not_active Expired - Lifetime
- 1977-10-13 CA CA288,640A patent/CA1111138A/en not_active Expired
- 1977-10-13 NL NLAANVRAGE7711263,A patent/NL188124C/xx not_active IP Right Cessation
- 1977-10-14 FR FR7730922A patent/FR2368145A1/fr active Granted
- 1977-10-14 DE DE19772746335 patent/DE2746335A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL7711263A (nl) | 1978-04-18 |
| FR2368145A1 (fr) | 1978-05-12 |
| US4179793A (en) | 1979-12-25 |
| FR2368145B1 (US20100056889A1-20100304-C00004.png) | 1982-06-04 |
| NL188124C (nl) | 1992-04-01 |
| JPS5347786A (en) | 1978-04-28 |
| DE2746335A1 (de) | 1978-04-27 |
| CA1111138A (en) | 1981-10-20 |
| NL188124B (nl) | 1991-11-01 |
| GB1578949A (en) | 1980-11-12 |
| JPS606101B2 (ja) | 1985-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2646308C3 (de) | Verfahren zum Herstellen nahe beieinander liegender elektrisch leitender Schichten | |
| DE2930630C2 (de) | Halbleiterbauelement sowie Verfahren zu seiner Herstellung | |
| DE3123876C2 (de) | Nicht-flüchtige Halbleiter-Speichervorrichtung | |
| DE2745857C2 (US20100056889A1-20100304-C00004.png) | ||
| DE2212049C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung und Verfahren zur Herstellung eines Transistors | |
| DE19654738B4 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
| DE2640525C2 (de) | Verfahren zur Herstellung einer MIS-Halbleiterschaltungsanordnung | |
| DE2746335C2 (US20100056889A1-20100304-C00004.png) | ||
| DE2932043C2 (de) | Feldgesteuerter Thyristor und Verfahren zu seiner Herstellung | |
| DE4042163C2 (de) | Verfahren zur Herstellung einer statischen Induktions-Halbleitervorrichtung mit Split-Gate-Struktur | |
| DE2610828C2 (de) | Thyristor mit passivierter Oberfläche | |
| DE3788470T2 (de) | Verfahren zur Herstellung eines Feldeffekttransistors mit isoliertem Gate. | |
| DE2703013A1 (de) | Verfahren zur bildung eines schmalen spalts bzw. schlitzes in einer materialschicht | |
| DE2454705A1 (de) | Ladungskopplungsanordnung | |
| DE2749607B2 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| DE2926334C2 (US20100056889A1-20100304-C00004.png) | ||
| DE2453279C3 (de) | Halbleiteranordnung | |
| DE2743299A1 (de) | Ladungskopplungsanordnung | |
| DE3789372T2 (de) | Verfahren zur Herstellung eines Halbleiterbauelements. | |
| DE3018594A1 (de) | Verfahren zur herstellung eines fet | |
| DE2854994C2 (de) | Halbleiteranordnung mit einem Transistor und einem mit dem Basisgebiet des Transistors verbundenen Widerstand | |
| DE2147447B2 (de) | Halbleiterbauelement | |
| DE2916732C2 (de) | Verfahren zum Herstellen von integrierten Halbleiterschaltungsanordnungen, bei dem Widerstandselemente gebildet werden | |
| DE2500184C2 (US20100056889A1-20100304-C00004.png) | ||
| DE3424085C2 (US20100056889A1-20100304-C00004.png) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |