DE2706031C2 - - Google Patents

Info

Publication number
DE2706031C2
DE2706031C2 DE2706031A DE2706031A DE2706031C2 DE 2706031 C2 DE2706031 C2 DE 2706031C2 DE 2706031 A DE2706031 A DE 2706031A DE 2706031 A DE2706031 A DE 2706031A DE 2706031 C2 DE2706031 C2 DE 2706031C2
Authority
DE
Germany
Prior art keywords
zone
anode
emitter
conductivity type
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2706031A
Other languages
German (de)
English (en)
Other versions
DE2706031A1 (de
Inventor
Heinz Dipl.-Ing. Dr. Nyon Ch Lehning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19772706031 priority Critical patent/DE2706031A1/de
Publication of DE2706031A1 publication Critical patent/DE2706031A1/de
Application granted granted Critical
Publication of DE2706031C2 publication Critical patent/DE2706031C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H10W10/031—
    • H10W10/30—

Landscapes

  • Thyristors (AREA)
DE19772706031 1977-02-12 1977-02-12 Integrierte schaltung mit einem thyristor Granted DE2706031A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19772706031 DE2706031A1 (de) 1977-02-12 1977-02-12 Integrierte schaltung mit einem thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772706031 DE2706031A1 (de) 1977-02-12 1977-02-12 Integrierte schaltung mit einem thyristor

Publications (2)

Publication Number Publication Date
DE2706031A1 DE2706031A1 (de) 1978-08-17
DE2706031C2 true DE2706031C2 (enExample) 1988-03-17

Family

ID=6001043

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772706031 Granted DE2706031A1 (de) 1977-02-12 1977-02-12 Integrierte schaltung mit einem thyristor

Country Status (1)

Country Link
DE (1) DE2706031A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
DE3484747D1 (de) * 1983-12-05 1991-08-01 Gen Electric Halbleitersubstrat mit einer elektrisch isolierten halbleiteranordnung.
CA1252225A (en) * 1985-11-27 1989-04-04 Sel Colak Lateral insulated gate transistors with coupled anode and gate regions

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
DE2026778C3 (de) * 1970-06-01 1978-12-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleitervierschichtdiode
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
JPS49131388A (enExample) * 1973-04-18 1974-12-17

Also Published As

Publication number Publication date
DE2706031A1 (de) 1978-08-17

Similar Documents

Publication Publication Date Title
DE3203066C2 (de) Integrierte Halbleiterschaltungsanordnung mit zwei gegenpolig geschalteten Dioden
DE1614373C2 (enExample)
DE3881304T2 (de) MOS-Transistor.
DE3834841C2 (de) Integrierte Anordnung in einem Substrat zur Vermeidung parasitärer Substrateffekte
DE2422912A1 (de) Integrierter halbleiterkreis
DE2500057C2 (de) Schaltungsanordnung zur Frequenzstabilisierung einer integrierten Schaltung
DE2704647A1 (de) Widerstand mit gesteuert einstellbarer groesse
DE3785483T2 (de) Halbleiteranordnung mit einem Bipolartransistor und Feldeffekttransistoren.
DE3022122C2 (enExample)
DE3142644C2 (de) Halbleiteranordnung mit in einem Halbleiterkörper angeordneten Bipolartransistor und Diode
DE3119288A1 (de) Halbleiteranordnung
DE2054863A1 (de) Spannungsverstärker
DE2558925C2 (de) Verfahren zur Herstellung einer integrierten Injektions-Schaltungsanordnung
DE2706031C2 (enExample)
DE3210785C2 (enExample)
DE2364753C2 (de) Halbleiterbauelement
DE10005811A1 (de) Laterale Thyristorstruktur zum Schutz vor elektrostatischer Entladung
DE3103785C2 (enExample)
DE2852402A1 (de) Lateral-halbleiterbauelement
EP0017980A1 (de) Thyristor mit Steuerung durch Feldeffekttransistor
DE68925150T2 (de) Bipolartransistor und Verfahren zu dessen Herstellung
DE3005367C2 (enExample)
DE1439268B1 (de) Integrierte Halbleiterschaltungsanordnung
DE3331631A1 (de) Halbleiter-bauelement
DE68912415T2 (de) Integrierte Stromspiegelschaltung mit vertikalen Transistoren.

Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee
8170 Reinstatement of the former position
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 29/74

8127 New person/name/address of the applicant

Owner name: SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee