DE2706031A1 - Integrierte schaltung mit einem thyristor - Google Patents

Integrierte schaltung mit einem thyristor

Info

Publication number
DE2706031A1
DE2706031A1 DE19772706031 DE2706031A DE2706031A1 DE 2706031 A1 DE2706031 A1 DE 2706031A1 DE 19772706031 DE19772706031 DE 19772706031 DE 2706031 A DE2706031 A DE 2706031A DE 2706031 A1 DE2706031 A1 DE 2706031A1
Authority
DE
Germany
Prior art keywords
cathode
anode
integrated circuit
thyristor
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19772706031
Other languages
German (de)
English (en)
Other versions
DE2706031C2 (https=
Inventor
Heinz Dipl Ing Dr Ing Lehning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
ENGL WALTER L PROF DR RER NAT
Engl walter L profdrrernat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ENGL WALTER L PROF DR RER NAT, Engl walter L profdrrernat filed Critical ENGL WALTER L PROF DR RER NAT
Priority to DE19772706031 priority Critical patent/DE2706031A1/de
Publication of DE2706031A1 publication Critical patent/DE2706031A1/de
Application granted granted Critical
Publication of DE2706031C2 publication Critical patent/DE2706031C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Thyristors (AREA)
DE19772706031 1977-02-12 1977-02-12 Integrierte schaltung mit einem thyristor Granted DE2706031A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19772706031 DE2706031A1 (de) 1977-02-12 1977-02-12 Integrierte schaltung mit einem thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772706031 DE2706031A1 (de) 1977-02-12 1977-02-12 Integrierte schaltung mit einem thyristor

Publications (2)

Publication Number Publication Date
DE2706031A1 true DE2706031A1 (de) 1978-08-17
DE2706031C2 DE2706031C2 (https=) 1988-03-17

Family

ID=6001043

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772706031 Granted DE2706031A1 (de) 1977-02-12 1977-02-12 Integrierte schaltung mit einem thyristor

Country Status (1)

Country Link
DE (1) DE2706031A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
EP0144865A3 (en) * 1983-12-05 1986-12-30 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
EP0522670A1 (en) * 1985-11-27 1993-01-13 Koninklijke Philips Electronics N.V. Fast switching lateral insulated gate field effect transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
DE2026778A1 (de) * 1970-06-01 1971-12-16 Siemens Ag Halbleitervierschichtdiode
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2418560A1 (de) * 1973-04-18 1974-11-14 Sony Corp Halbleitervorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
DE2026778A1 (de) * 1970-06-01 1971-12-16 Siemens Ag Halbleitervierschichtdiode
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2418560A1 (de) * 1973-04-18 1974-11-14 Sony Corp Halbleitervorrichtung

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
J. Wüstehube: "Integrierte Halbleiterschaltungen",Valvo GmbH Hamburg, 1966, S. 19-32 *
Solid State Electronics, Bd. 11, Nr. 4, 1968, S. 437-444 *
Solid State Electronics, Bd. 11, Nr. 8, 1968, S. 779-785 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
EP0144865A3 (en) * 1983-12-05 1986-12-30 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
EP0522670A1 (en) * 1985-11-27 1993-01-13 Koninklijke Philips Electronics N.V. Fast switching lateral insulated gate field effect transistor

Also Published As

Publication number Publication date
DE2706031C2 (https=) 1988-03-17

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee
8170 Reinstatement of the former position
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 29/74

8127 New person/name/address of the applicant

Owner name: SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee