DE2704312A1 - Duennschicht-transistoreinrichtung - Google Patents

Duennschicht-transistoreinrichtung

Info

Publication number
DE2704312A1
DE2704312A1 DE19772704312 DE2704312A DE2704312A1 DE 2704312 A1 DE2704312 A1 DE 2704312A1 DE 19772704312 DE19772704312 DE 19772704312 DE 2704312 A DE2704312 A DE 2704312A DE 2704312 A1 DE2704312 A1 DE 2704312A1
Authority
DE
Germany
Prior art keywords
layer
indium
source
control electrode
cadmium selenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19772704312
Other languages
German (de)
English (en)
Inventor
Fang-Chen Luo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/716,046 external-priority patent/US4040073A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2704312A1 publication Critical patent/DE2704312A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
DE19772704312 1976-08-20 1977-02-02 Duennschicht-transistoreinrichtung Ceased DE2704312A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/716,046 US4040073A (en) 1975-08-29 1976-08-20 Thin film transistor and display panel using the transistor

Publications (1)

Publication Number Publication Date
DE2704312A1 true DE2704312A1 (de) 1978-02-23

Family

ID=24876509

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772704312 Ceased DE2704312A1 (de) 1976-08-20 1977-02-02 Duennschicht-transistoreinrichtung

Country Status (2)

Country Link
JP (1) JPS5326586A (https=)
DE (1) DE2704312A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156368A (en) * 1979-05-23 1980-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1228699A (https=) * 1968-07-15 1971-04-15
DE1764756B2 (de) * 1967-08-04 1973-07-19 Verfahren zur herstellung eines duennfilm-feldeffekt-bauelementes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764756B2 (de) * 1967-08-04 1973-07-19 Verfahren zur herstellung eines duennfilm-feldeffekt-bauelementes
GB1228699A (https=) * 1968-07-15 1971-04-15

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GB-Z.: Solid-State Electronics, Vol. 10, 1967, S. 997-1004 *
Tickle, A.C., Thin-Film Transistors, New York 1969, S. 87 *
US-Z.: Electronics Letters, Vol. 1, 1965, S. 49 *

Also Published As

Publication number Publication date
JPS6126233B2 (https=) 1986-06-19
JPS5326586A (en) 1978-03-11

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