DE2661096C2 - - Google Patents

Info

Publication number
DE2661096C2
DE2661096C2 DE19762661096 DE2661096A DE2661096C2 DE 2661096 C2 DE2661096 C2 DE 2661096C2 DE 19762661096 DE19762661096 DE 19762661096 DE 2661096 A DE2661096 A DE 2661096A DE 2661096 C2 DE2661096 C2 DE 2661096C2
Authority
DE
Germany
Prior art keywords
zone
zones
control electrode
junction
forward blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19762661096
Other languages
German (de)
English (en)
Inventor
Patrick De Dipl.-Ing. Siggenthal Ch Bruyne
Roland Dr. Umiken Ch Sittig
Wolfgang Dr. Klingnau Ch Zimmermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Application granted granted Critical
Publication of DE2661096C2 publication Critical patent/DE2661096C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
DE19762661096 1976-06-02 1976-06-26 Expired DE2661096C2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH692976A CH594984A5 (ja) 1976-06-02 1976-06-02

Publications (1)

Publication Number Publication Date
DE2661096C2 true DE2661096C2 (ja) 1989-04-06

Family

ID=4317256

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19762661096 Expired DE2661096C2 (ja) 1976-06-02 1976-06-26
DE19762628793 Granted DE2628793A1 (de) 1976-06-02 1976-06-26 Thyristor

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19762628793 Granted DE2628793A1 (de) 1976-06-02 1976-06-26 Thyristor

Country Status (2)

Country Link
CH (1) CH594984A5 (ja)
DE (2) DE2661096C2 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH622127A5 (ja) * 1977-12-21 1981-03-13 Bbc Brown Boveri & Cie
DE2853292A1 (de) * 1978-11-24 1980-06-12 Bbc Brown Boveri & Cie Optisch aktivierbares halbleiterbauelement
JPS63260078A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 過電圧自己保護型サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2140993A1 (de) * 1971-08-16 1973-03-01 Siemens Ag Thyristor
DE2107566B2 (de) * 1970-02-24 1973-11-22 Allmaenna Svenska Elektriska Ab, Vaesteraas (Schweden) Thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2107566B2 (de) * 1970-02-24 1973-11-22 Allmaenna Svenska Elektriska Ab, Vaesteraas (Schweden) Thyristor
DE2140993A1 (de) * 1971-08-16 1973-03-01 Siemens Ag Thyristor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE Transactions on Electron Devices, Vol. ED-22,Nr. 10, 1975, S. 910-916 *
Solid-State Electronics, 1974, Vol. 17, H. 7, S. 655-661 *

Also Published As

Publication number Publication date
DE2628793C2 (ja) 1988-06-16
DE2628793A1 (de) 1977-12-15
CH594984A5 (ja) 1978-01-31

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