DE2653128C2 - Ladungsgekoppelte Anordnung - Google Patents
Ladungsgekoppelte AnordnungInfo
- Publication number
- DE2653128C2 DE2653128C2 DE2653128A DE2653128A DE2653128C2 DE 2653128 C2 DE2653128 C2 DE 2653128C2 DE 2653128 A DE2653128 A DE 2653128A DE 2653128 A DE2653128 A DE 2653128A DE 2653128 C2 DE2653128 C2 DE 2653128C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- charge
- impurity concentration
- coupled device
- level impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 125
- 230000005855 radiation Effects 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000002800 charge carrier Substances 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 230000035945 sensitivity Effects 0.000 claims description 17
- 230000005284 excitation Effects 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 230000015556 catabolic process Effects 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 230000001960 triggered effect Effects 0.000 claims description 5
- 230000005670 electromagnetic radiation Effects 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 166
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 239000000463 material Substances 0.000 description 22
- 238000003384 imaging method Methods 0.000 description 21
- 238000001444 catalytic combustion detection Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 18
- 239000000370 acceptor Substances 0.000 description 8
- 230000010354 integration Effects 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003331 infrared imaging Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009469 supplementation Effects 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/7685—Three-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB49089/75A GB1564107A (en) | 1976-11-05 | 1976-11-05 | Charge coupled devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2653128A1 DE2653128A1 (de) | 1977-06-23 |
| DE2653128C2 true DE2653128C2 (de) | 1987-04-16 |
Family
ID=10451102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2653128A Expired DE2653128C2 (de) | 1976-11-05 | 1976-11-23 | Ladungsgekoppelte Anordnung |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5289490A (zh) |
| AU (1) | AU504774B2 (zh) |
| CA (1) | CA1096496A (zh) |
| DE (1) | DE2653128C2 (zh) |
| FR (1) | FR2333352A1 (zh) |
| GB (1) | GB1564107A (zh) |
| IT (1) | IT1064641B (zh) |
| NL (1) | NL7613062A (zh) |
| SE (1) | SE418434B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9074681B2 (en) | 2012-11-20 | 2015-07-07 | United Technologies Corporation | Hardened silver coated journal bearing surfaces and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL176406C (nl) * | 1971-10-27 | 1985-04-01 | Philips Nv | Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag. |
| US3829885A (en) * | 1972-10-12 | 1974-08-13 | Zaidan Hojin Handotai Kenkyu | Charge coupled semiconductor memory device |
| DD114174A1 (zh) * | 1973-10-03 | 1975-07-12 |
-
1976
- 1976-11-05 GB GB49089/75A patent/GB1564107A/en not_active Expired
- 1976-11-23 DE DE2653128A patent/DE2653128C2/de not_active Expired
- 1976-11-23 AU AU19911/76A patent/AU504774B2/en not_active Expired
- 1976-11-24 CA CA266,509A patent/CA1096496A/en not_active Expired
- 1976-11-24 NL NL7613062A patent/NL7613062A/ not_active Application Discontinuation
- 1976-11-25 SE SE7613217A patent/SE418434B/xx unknown
- 1976-11-25 IT IT7629784A patent/IT1064641B/it active
- 1976-11-29 FR FR7635911A patent/FR2333352A1/fr active Granted
- 1976-11-29 JP JP14324576A patent/JPS5289490A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU1991176A (en) | 1978-06-01 |
| GB1564107A (en) | 1980-04-02 |
| SE418434B (sv) | 1981-05-25 |
| FR2333352A1 (fr) | 1977-06-24 |
| JPS552745B2 (zh) | 1980-01-22 |
| CA1096496A (en) | 1981-02-24 |
| JPS5289490A (en) | 1977-07-27 |
| NL7613062A (nl) | 1977-06-01 |
| FR2333352B1 (zh) | 1982-11-19 |
| DE2653128A1 (de) | 1977-06-23 |
| AU504774B2 (en) | 1979-10-25 |
| SE7613217L (sv) | 1977-05-29 |
| IT1064641B (it) | 1985-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8125 | Change of the main classification | ||
| 8126 | Change of the secondary classification | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |