DE2638976C2 - - Google Patents
Info
- Publication number
- DE2638976C2 DE2638976C2 DE2638976A DE2638976A DE2638976C2 DE 2638976 C2 DE2638976 C2 DE 2638976C2 DE 2638976 A DE2638976 A DE 2638976A DE 2638976 A DE2638976 A DE 2638976A DE 2638976 C2 DE2638976 C2 DE 2638976C2
- Authority
- DE
- Germany
- Prior art keywords
- charge
- registers
- charge transfer
- register
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012546 transfer Methods 0.000 claims description 99
- 239000004065 semiconductor Substances 0.000 claims description 49
- 230000015654 memory Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 2
- 210000003608 fece Anatomy 0.000 claims 1
- 230000010354 integration Effects 0.000 description 15
- 230000005855 radiation Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010351 charge transfer process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/152—One-dimensional array CCD image sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/287—Organisation of a multiplicity of shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7510311A NL7510311A (nl) | 1975-09-02 | 1975-09-02 | Ladingsoverdrachtinrichting. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2638976A1 DE2638976A1 (de) | 1977-03-17 |
| DE2638976C2 true DE2638976C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-07-02 |
Family
ID=19824397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762638976 Granted DE2638976A1 (de) | 1975-09-02 | 1976-08-28 | Ladungsuebertragungsanordnung |
Country Status (11)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8101883A (nl) * | 1981-04-16 | 1982-11-16 | Philips Nv | Ladingsgekoppelde inrichting. |
| EP0070620A3 (en) * | 1981-07-20 | 1985-11-06 | Xerox Corporation | High density imager |
| JPS5856458U (ja) * | 1981-10-09 | 1983-04-16 | 株式会社日立製作所 | カラ−固体撮像装置 |
| JPS5913369A (ja) * | 1982-07-13 | 1984-01-24 | Sony Corp | 固体撮像素子 |
| NL8301715A (nl) * | 1983-05-13 | 1984-12-03 | Philips Nv | Ladingstransportinrichting. |
| NL8401312A (nl) * | 1984-04-24 | 1985-11-18 | Philips Nv | Ladingsgekoppelde inrichting. |
| FR2564674B1 (fr) * | 1984-05-18 | 1986-09-19 | Thomson Csf | Barrette multilineaire a transfert de charge et procede d'analyse |
| NL8500787A (nl) * | 1985-03-19 | 1986-10-16 | Philips Nv | Kleurentelevisie-ontvanger voorzien van een televisieschakeling voor het omzetten van een tijdmultiplexsignaal in simultane signalen en daarvoor geschikte, geintegreerde schakeling. |
| CN1031156A (zh) * | 1987-07-10 | 1989-02-15 | 菲利浦光灯制造公司 | 电荷耦合器件 |
| GB2211660A (en) * | 1987-10-28 | 1989-07-05 | Philips Nv | A charge-coupled device de-interlacer |
| JPH01168060A (ja) * | 1987-12-24 | 1989-07-03 | Fuji Photo Film Co Ltd | 電荷転送素子 |
| JPH0832961B2 (ja) * | 1989-02-28 | 1996-03-29 | セイミケミカル株式会社 | 酸洗浄剤 |
| EP0475886B1 (fr) * | 1990-08-24 | 1994-11-09 | Fabriques De Tabac Reunies S.A. | Procédé et dispositif d'ouverture d'une galette de papier et de raccordement d'une extrémité d'une bande de papier à une extrémité d'une autre bande de papier |
| JP3146526B2 (ja) * | 1991-07-09 | 2001-03-19 | ソニー株式会社 | Ｃｃｄ撮像素子 |
| JP2001308313A (ja) * | 2000-04-21 | 2001-11-02 | Nec Corp | 電荷転送装置及びそれを用いた固体撮像装置 |
| US6541794B1 (en) * | 2000-08-31 | 2003-04-01 | Motorola, Inc. | Imaging device and method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL163392C (nl) * | 1966-10-25 | 1980-03-17 | Philips Nv | Condensatoroverlaadinrichting. |
| NL165870C (nl) * | 1971-09-16 | 1981-05-15 | Philips Nv | Analoog schuifregister. |
| US3763480A (en) * | 1971-10-12 | 1973-10-02 | Rca Corp | Digital and analog data handling devices |
| NL181766C (nl) * | 1973-03-19 | 1987-10-16 | Philips Nv | Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. |
| US3889245A (en) * | 1973-07-02 | 1975-06-10 | Texas Instruments Inc | Metal-insulator-semiconductor compatible charge transfer device memory system |
| NL7411507A (nl) * | 1973-10-03 | 1975-04-07 | Fairchild Camera Instr Co | Lineair stelsel voorzien van een aantal -aftastorganen. |
| US3971003A (en) * | 1974-11-18 | 1976-07-20 | Rca Corporation | Charge coupled device imager |
| US3958210A (en) * | 1975-02-05 | 1976-05-18 | Rca Corporation | Charge coupled device systems |
| US4007446A (en) * | 1975-06-30 | 1977-02-08 | Honeywell Information Systems, Inc. | Multiphase series-parallel-series charge-coupled device registers |
-
1975
- 1975-09-02 NL NL7510311A patent/NL7510311A/xx not_active Application Discontinuation
- 1975-12-10 US US05/639,278 patent/US4131950A/en not_active Expired - Lifetime
-
1976
- 1976-08-26 CA CA259,961A patent/CA1096969A/en not_active Expired
- 1976-08-27 GB GB35729/76A patent/GB1561747A/en not_active Expired
- 1976-08-28 DE DE19762638976 patent/DE2638976A1/de active Granted
- 1976-08-30 SE SE7609572A patent/SE417028B/xx unknown
- 1976-08-30 IT IT26659/76A patent/IT1067788B/it active
- 1976-08-31 BR BR7605738A patent/BR7605738A/pt unknown
- 1976-09-01 AU AU17339/76A patent/AU506122B2/en not_active Expired
- 1976-09-02 FR FR7626488A patent/FR2323211A1/fr active Granted
- 1976-09-02 JP JP51104336A patent/JPS5230394A/ja active Granted
-
1979
- 1979-09-11 SE SE7907528A patent/SE7907528L/sv unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE417028B (sv) | 1981-02-16 |
| FR2323211A1 (fr) | 1977-04-01 |
| AU1733976A (en) | 1978-03-09 |
| DE2638976A1 (de) | 1977-03-17 |
| CA1096969A (en) | 1981-03-03 |
| GB1561747A (en) | 1980-02-27 |
| JPS5335437B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-09-27 |
| US4131950A (en) | 1978-12-26 |
| AU506122B2 (en) | 1979-12-13 |
| FR2323211B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-11-26 |
| JPS5230394A (en) | 1977-03-08 |
| BR7605738A (pt) | 1977-08-23 |
| NL7510311A (nl) | 1977-03-04 |
| SE7609572L (sv) | 1977-03-03 |
| IT1067788B (it) | 1985-03-16 |
| SE7907528L (sv) | 1979-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |