JPS5230394A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5230394A
JPS5230394A JP51104336A JP10433676A JPS5230394A JP S5230394 A JPS5230394 A JP S5230394A JP 51104336 A JP51104336 A JP 51104336A JP 10433676 A JP10433676 A JP 10433676A JP S5230394 A JPS5230394 A JP S5230394A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
charge
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51104336A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5335437B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Heritsuto Fuan Sanchi Yohanesu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5230394A publication Critical patent/JPS5230394A/ja
Publication of JPS5335437B2 publication Critical patent/JPS5335437B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Hall/Mr Elements (AREA)
JP51104336A 1975-09-02 1976-09-02 Charge transfer device Granted JPS5230394A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7510311A NL7510311A (nl) 1975-09-02 1975-09-02 Ladingsoverdrachtinrichting.

Publications (2)

Publication Number Publication Date
JPS5230394A true JPS5230394A (en) 1977-03-08
JPS5335437B2 JPS5335437B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-09-27

Family

ID=19824397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51104336A Granted JPS5230394A (en) 1975-09-02 1976-09-02 Charge transfer device

Country Status (11)

Country Link
US (1) US4131950A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5230394A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU506122B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR7605738A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1096969A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2638976A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2323211A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1561747A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1067788B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7510311A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (2) SE417028B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913369A (ja) * 1982-07-13 1984-01-24 Sony Corp 固体撮像素子
JPH01168060A (ja) * 1987-12-24 1989-07-03 Fuji Photo Film Co Ltd 電荷転送素子
JPH02225683A (ja) * 1989-02-28 1990-09-07 Seimi Chem Kk 酸洗浄剤

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8101883A (nl) * 1981-04-16 1982-11-16 Philips Nv Ladingsgekoppelde inrichting.
EP0070620A3 (en) * 1981-07-20 1985-11-06 Xerox Corporation High density imager
JPS5856458U (ja) * 1981-10-09 1983-04-16 株式会社日立製作所 カラ−固体撮像装置
NL8301715A (nl) * 1983-05-13 1984-12-03 Philips Nv Ladingstransportinrichting.
NL8401312A (nl) * 1984-04-24 1985-11-18 Philips Nv Ladingsgekoppelde inrichting.
FR2564674B1 (fr) * 1984-05-18 1986-09-19 Thomson Csf Barrette multilineaire a transfert de charge et procede d'analyse
NL8500787A (nl) * 1985-03-19 1986-10-16 Philips Nv Kleurentelevisie-ontvanger voorzien van een televisieschakeling voor het omzetten van een tijdmultiplexsignaal in simultane signalen en daarvoor geschikte, geintegreerde schakeling.
CN1031156A (zh) * 1987-07-10 1989-02-15 菲利浦光灯制造公司 电荷耦合器件
GB2211660A (en) * 1987-10-28 1989-07-05 Philips Nv A charge-coupled device de-interlacer
EP0475886B1 (fr) * 1990-08-24 1994-11-09 Fabriques De Tabac Reunies S.A. Procédé et dispositif d'ouverture d'une galette de papier et de raccordement d'une extrémité d'une bande de papier à une extrémité d'une autre bande de papier
JP3146526B2 (ja) * 1991-07-09 2001-03-19 ソニー株式会社 Ｃｃｄ撮像素子
JP2001308313A (ja) * 2000-04-21 2001-11-02 Nec Corp 電荷転送装置及びそれを用いた固体撮像装置
US6541794B1 (en) * 2000-08-31 2003-04-01 Motorola, Inc. Imaging device and method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL163392C (nl) * 1966-10-25 1980-03-17 Philips Nv Condensatoroverlaadinrichting.
NL165870C (nl) * 1971-09-16 1981-05-15 Philips Nv Analoog schuifregister.
US3763480A (en) * 1971-10-12 1973-10-02 Rca Corp Digital and analog data handling devices
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
US3889245A (en) * 1973-07-02 1975-06-10 Texas Instruments Inc Metal-insulator-semiconductor compatible charge transfer device memory system
NL7411507A (nl) * 1973-10-03 1975-04-07 Fairchild Camera Instr Co Lineair stelsel voorzien van een aantal -aftastorganen.
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager
US3958210A (en) * 1975-02-05 1976-05-18 Rca Corporation Charge coupled device systems
US4007446A (en) * 1975-06-30 1977-02-08 Honeywell Information Systems, Inc. Multiphase series-parallel-series charge-coupled device registers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913369A (ja) * 1982-07-13 1984-01-24 Sony Corp 固体撮像素子
JPH01168060A (ja) * 1987-12-24 1989-07-03 Fuji Photo Film Co Ltd 電荷転送素子
JPH02225683A (ja) * 1989-02-28 1990-09-07 Seimi Chem Kk 酸洗浄剤

Also Published As

Publication number Publication date
SE417028B (sv) 1981-02-16
FR2323211A1 (fr) 1977-04-01
AU1733976A (en) 1978-03-09
DE2638976A1 (de) 1977-03-17
CA1096969A (en) 1981-03-03
GB1561747A (en) 1980-02-27
JPS5335437B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-09-27
US4131950A (en) 1978-12-26
DE2638976C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-07-02
AU506122B2 (en) 1979-12-13
FR2323211B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-11-26
BR7605738A (pt) 1977-08-23
NL7510311A (nl) 1977-03-04
SE7609572L (sv) 1977-03-03
IT1067788B (it) 1985-03-16
SE7907528L (sv) 1979-09-11

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