DE2620187C3 - Monostabile Multivibratorschaltung - Google Patents
Monostabile MultivibratorschaltungInfo
- Publication number
- DE2620187C3 DE2620187C3 DE2620187A DE2620187A DE2620187C3 DE 2620187 C3 DE2620187 C3 DE 2620187C3 DE 2620187 A DE2620187 A DE 2620187A DE 2620187 A DE2620187 A DE 2620187A DE 2620187 C3 DE2620187 C3 DE 2620187C3
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- capacitor
- effect transistor
- transistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 42
- 230000005669 field effect Effects 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/355—Monostable circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Control Of Electrical Variables (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Manipulation Of Pulses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/575,912 US3996482A (en) | 1975-05-09 | 1975-05-09 | One shot multivibrator circuit |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2620187A1 DE2620187A1 (de) | 1976-11-18 |
| DE2620187B2 DE2620187B2 (de) | 1979-06-13 |
| DE2620187C3 true DE2620187C3 (de) | 1983-04-07 |
Family
ID=24302196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2620187A Expired DE2620187C3 (de) | 1975-05-09 | 1976-05-07 | Monostabile Multivibratorschaltung |
Country Status (7)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5931863B2 (ja) * | 1976-01-07 | 1984-08-04 | 株式会社日立製作所 | 電圧出力回路 |
| US4047057A (en) * | 1976-08-23 | 1977-09-06 | Rca Corporation | Monostable switching circuit |
| JPS5363057A (en) * | 1976-11-18 | 1978-06-06 | Seiko Epson Corp | Electronic wristwatch |
| US4242640A (en) * | 1978-01-03 | 1980-12-30 | Sperry Corporation | Current discharge fast time constant amplifier |
| DE2826624C2 (de) * | 1978-06-19 | 1982-11-04 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrierte IGFET-Konstantstromquelle |
| US4321484A (en) * | 1979-02-28 | 1982-03-23 | International Business Machines Corporation | Field effect transistor multivibrator |
| DE3027456C2 (de) * | 1980-07-19 | 1984-11-15 | Telefunken electronic GmbH, 7100 Heilbronn | Integrierte Halbleiterschaltung mit einer Stromquelle aus einem Verarmungs-IG-FET |
| DE3219682C2 (de) * | 1982-05-21 | 1986-11-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Stellbarer Monoflop |
| US4585953A (en) * | 1983-07-20 | 1986-04-29 | International Business Machines Corporation | Low power off-chip driver circuit |
| US4629908A (en) * | 1985-02-19 | 1986-12-16 | Standard Microsystems Corp. | MOS monostable multivibrator |
| JP3318365B2 (ja) * | 1992-10-20 | 2002-08-26 | 富士通株式会社 | 定電圧回路 |
| FR2707058B1 (US07642317-20100105-C00010.png) * | 1993-06-23 | 1995-09-15 | Sgs Thomson Microelectronics | |
| FR2722624B1 (fr) * | 1994-07-12 | 1996-09-06 | Suisse Electronique Microtech | Circuit a retard, notamment pour univibrateur |
| US6172541B1 (en) | 1998-09-14 | 2001-01-09 | Intersil Corporation | Driver circuit having load-independent slew rate |
| US20030009595A1 (en) * | 2001-07-09 | 2003-01-09 | Roger Collins | System and method for compressing data using field-based code word generation |
| JP2005093887A (ja) * | 2003-09-19 | 2005-04-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP5806076B2 (ja) * | 2011-10-11 | 2015-11-10 | 古野電気株式会社 | Ｒｆパルス信号生成用スイッチング回路、ｒｆパルス信号生成回路、および物標探知装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL280606A (US07642317-20100105-C00010.png) * | 1961-07-12 | |||
| FR1394707A (fr) * | 1962-09-20 | 1965-04-09 | Telecommunications Sa | Circuit monostable à transistors |
| US3508084A (en) * | 1967-10-06 | 1970-04-21 | Texas Instruments Inc | Enhancement-mode mos circuitry |
| US3691537A (en) * | 1971-05-26 | 1972-09-12 | Gen Electric | High speed signal in mos circuits by voltage variable capacitor |
| US3702943A (en) * | 1971-11-05 | 1972-11-14 | Rca Corp | Field-effect transistor circuit for detecting changes in voltage level |
| US3719835A (en) * | 1971-12-01 | 1973-03-06 | Motorola Inc | Variable delay,mos,monostable pulse generating circuit |
| US3770987A (en) * | 1972-03-30 | 1973-11-06 | Litton Business Systems Inc | Extended range capacitive timing circuit |
| US3806742A (en) * | 1972-11-01 | 1974-04-23 | Motorola Inc | Mos voltage reference circuit |
| US3840829A (en) * | 1973-02-02 | 1974-10-08 | E Hochmair | Integrated p-channel mos gyrator |
-
1975
- 1975-05-09 US US05/575,912 patent/US3996482A/en not_active Expired - Lifetime
-
1976
- 1976-04-23 GB GB16605/76A patent/GB1491846A/en not_active Expired
- 1976-05-04 IT IT22980/76A patent/IT1059797B/it active
- 1976-05-06 FR FR7613517A patent/FR2310658A1/fr active Granted
- 1976-05-07 NL NLAANVRAGE7604930,A patent/NL177544C/xx not_active IP Right Cessation
- 1976-05-07 DE DE2620187A patent/DE2620187C3/de not_active Expired
- 1976-05-07 JP JP51052049A patent/JPS51137858A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3996482A (en) | 1976-12-07 |
| NL177544B (nl) | 1985-05-01 |
| FR2310658A1 (fr) | 1976-12-03 |
| NL177544C (nl) | 1985-10-01 |
| IT1059797B (it) | 1982-06-21 |
| JPS51137858A (en) | 1976-11-29 |
| DE2620187B2 (de) | 1979-06-13 |
| FR2310658B1 (US07642317-20100105-C00010.png) | 1981-08-21 |
| DE2620187A1 (de) | 1976-11-18 |
| GB1491846A (en) | 1977-11-16 |
| NL7604930A (nl) | 1976-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8326 | Change of the secondary classification |
Ipc: H03K 3/355 |
|
| 8381 | Inventor (new situation) |
Free format text: LOCKWOOD, GEORGE CORBIN, DAYTON, OHIO, US |
|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |