DE2614580C2 - "I↑2↑L-Schaltung" - Google Patents

"I↑2↑L-Schaltung"

Info

Publication number
DE2614580C2
DE2614580C2 DE2614580A DE2614580A DE2614580C2 DE 2614580 C2 DE2614580 C2 DE 2614580C2 DE 2614580 A DE2614580 A DE 2614580A DE 2614580 A DE2614580 A DE 2614580A DE 2614580 C2 DE2614580 C2 DE 2614580C2
Authority
DE
Germany
Prior art keywords
transistor
current
layer
base
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2614580A
Other languages
German (de)
English (en)
Other versions
DE2614580A1 (de
Inventor
Claude Caen Calvados Chapron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2614580A1 publication Critical patent/DE2614580A1/de
Application granted granted Critical
Publication of DE2614580C2 publication Critical patent/DE2614580C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
DE2614580A 1975-04-14 1976-04-05 "I↑2↑L-Schaltung" Expired DE2614580C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7511504A FR2308206A2 (fr) 1975-04-14 1975-04-14 Circuit logique integre a injecteurs de courant

Publications (2)

Publication Number Publication Date
DE2614580A1 DE2614580A1 (de) 1976-10-28
DE2614580C2 true DE2614580C2 (de) 1982-03-25

Family

ID=9153872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2614580A Expired DE2614580C2 (de) 1975-04-14 1976-04-05 "I↑2↑L-Schaltung"

Country Status (6)

Country Link
US (1) US4243896A (OSRAM)
JP (1) JPS51126777A (OSRAM)
DE (1) DE2614580C2 (OSRAM)
FR (1) FR2308206A2 (OSRAM)
GB (1) GB1551772A (OSRAM)
NL (1) NL7603827A (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538910C3 (de) * 1975-09-02 1980-01-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Schaltungsanordnung zur Erhöhung der Schaltgeschwindigkeit einer integrierten Schaltung
US4100431A (en) * 1976-10-07 1978-07-11 Motorola, Inc. Integrated injection logic to linear high impedance current interface
DE2949201A1 (de) * 1979-12-06 1981-06-11 Siemens AG, 1000 Berlin und 8000 München Aus i (pfeil hoch)2(pfeil hoch) l-zellen und weiteren schaltungsteilen bestehende monolithisch integrierte halbleiterschaltung
US4459496A (en) * 1980-04-04 1984-07-10 Matsushita Electric Industrial Company, Limited Semiconductor integrated circuit having stacked integrated injection logic circuits
FR2491276A1 (fr) * 1980-09-26 1982-04-02 Trt Telecom Radio Electr Circuits d'interface entre couches de logique a injection empilees et polarisees a differentes tensions
JPS57116430A (en) * 1981-01-13 1982-07-20 Toshiba Corp Inverted logical circuit
JPS57167671A (en) * 1981-04-08 1982-10-15 Hitachi Ltd Semiconductor integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7107040A (OSRAM) * 1971-05-22 1972-11-24
FR2244262B1 (OSRAM) * 1973-09-13 1978-09-29 Radiotechnique Compelec
US4013901A (en) * 1974-02-19 1977-03-22 Texas Instruments Incorporated Stacked logic design for I2 L watch
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren

Also Published As

Publication number Publication date
JPS5516536B2 (OSRAM) 1980-05-02
GB1551772A (en) 1979-08-30
US4243896A (en) 1981-01-06
NL7603827A (nl) 1976-10-18
FR2308206A2 (fr) 1976-11-12
FR2308206B2 (OSRAM) 1982-01-22
DE2614580A1 (de) 1976-10-28
JPS51126777A (en) 1976-11-05

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8339 Ceased/non-payment of the annual fee