DE2553659C2 - Gunn-Effekt-Höchstfrequenzdiode - Google Patents

Gunn-Effekt-Höchstfrequenzdiode

Info

Publication number
DE2553659C2
DE2553659C2 DE2553659A DE2553659A DE2553659C2 DE 2553659 C2 DE2553659 C2 DE 2553659C2 DE 2553659 A DE2553659 A DE 2553659A DE 2553659 A DE2553659 A DE 2553659A DE 2553659 C2 DE2553659 C2 DE 2553659C2
Authority
DE
Germany
Prior art keywords
zones
high frequency
gunn effect
frequency diode
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2553659A
Other languages
German (de)
English (en)
Other versions
DE2553659A1 (de
Inventor
Jean-Jacques Boulogne Godart
Paul-Cyril Orsay Moutou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE2553659A1 publication Critical patent/DE2553659A1/de
Application granted granted Critical
Publication of DE2553659C2 publication Critical patent/DE2553659C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes
DE2553659A 1974-11-29 1975-11-28 Gunn-Effekt-Höchstfrequenzdiode Expired DE2553659C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7439192A FR2293069A1 (fr) 1974-11-29 1974-11-29 Dispositif hyperfrequence a effet gunn

Publications (2)

Publication Number Publication Date
DE2553659A1 DE2553659A1 (de) 1976-08-12
DE2553659C2 true DE2553659C2 (de) 1984-10-25

Family

ID=9145399

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2553659A Expired DE2553659C2 (de) 1974-11-29 1975-11-28 Gunn-Effekt-Höchstfrequenzdiode

Country Status (4)

Country Link
JP (1) JPS5856988B2 (zh)
DE (1) DE2553659C2 (zh)
FR (1) FR2293069A1 (zh)
GB (1) GB1514976A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
FR2648276A1 (fr) * 1989-06-13 1990-12-14 Thomson Csf Composant a effet gunn comportant un dispositif d'injection d'electrons

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600705A (en) * 1969-02-27 1971-08-17 Gen Electric Highly efficient subcritically doped electron-transfer effect devices
GB1354511A (en) * 1970-04-22 1974-06-05 Secr Defence Semiconductor devices

Also Published As

Publication number Publication date
FR2293069A1 (fr) 1976-06-25
GB1514976A (en) 1978-06-21
JPS5199479A (zh) 1976-09-02
DE2553659A1 (de) 1976-08-12
JPS5856988B2 (ja) 1983-12-17
FR2293069B1 (zh) 1977-03-25

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee