JPS5199479A - - Google Patents
Info
- Publication number
- JPS5199479A JPS5199479A JP50141799A JP14179975A JPS5199479A JP S5199479 A JPS5199479 A JP S5199479A JP 50141799 A JP50141799 A JP 50141799A JP 14179975 A JP14179975 A JP 14179975A JP S5199479 A JPS5199479 A JP S5199479A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7439192A FR2293069A1 (fr) | 1974-11-29 | 1974-11-29 | Dispositif hyperfrequence a effet gunn |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5199479A true JPS5199479A (zh) | 1976-09-02 |
| JPS5856988B2 JPS5856988B2 (ja) | 1983-12-17 |
Family
ID=9145399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50141799A Expired JPS5856988B2 (ja) | 1974-11-29 | 1975-11-27 | ガンコウカコウシユウハソシ |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5856988B2 (zh) |
| DE (1) | DE2553659C2 (zh) |
| FR (1) | FR2293069A1 (zh) |
| GB (1) | GB1514976A (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4238763A (en) * | 1977-08-10 | 1980-12-09 | National Research Development Corporation | Solid state microwave devices with small active contact and large passive contact |
| FR2648276A1 (fr) * | 1989-06-13 | 1990-12-14 | Thomson Csf | Composant a effet gunn comportant un dispositif d'injection d'electrons |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3600705A (en) * | 1969-02-27 | 1971-08-17 | Gen Electric | Highly efficient subcritically doped electron-transfer effect devices |
| GB1354511A (en) * | 1970-04-22 | 1974-06-05 | Secr Defence | Semiconductor devices |
-
1974
- 1974-11-29 FR FR7439192A patent/FR2293069A1/fr active Granted
-
1975
- 1975-11-27 JP JP50141799A patent/JPS5856988B2/ja not_active Expired
- 1975-11-28 DE DE2553659A patent/DE2553659C2/de not_active Expired
- 1975-11-28 GB GB49122/75A patent/GB1514976A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2293069B1 (zh) | 1977-03-25 |
| JPS5856988B2 (ja) | 1983-12-17 |
| FR2293069A1 (fr) | 1976-06-25 |
| DE2553659C2 (de) | 1984-10-25 |
| DE2553659A1 (de) | 1976-08-12 |
| GB1514976A (en) | 1978-06-21 |