DE2537464A1 - Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben - Google Patents
Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheibenInfo
- Publication number
- DE2537464A1 DE2537464A1 DE19752537464 DE2537464A DE2537464A1 DE 2537464 A1 DE2537464 A1 DE 2537464A1 DE 19752537464 DE19752537464 DE 19752537464 DE 2537464 A DE2537464 A DE 2537464A DE 2537464 A1 DE2537464 A1 DE 2537464A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- semiconductor wafer
- mechanical stress
- stress field
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 title claims description 3
- 235000012431 wafers Nutrition 0.000 claims description 26
- 230000007547 defect Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 230000006378 damage Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 235000021388 linseed oil Nutrition 0.000 description 1
- 239000000944 linseed oil Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/061—Gettering-armorphous layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752537464 DE2537464A1 (de) | 1975-08-22 | 1975-08-22 | Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben |
| US05/708,235 US4042419A (en) | 1975-08-22 | 1976-07-23 | Process for the removal of specific crystal structure defects from semiconductor discs and the product thereof |
| NL7608324A NL7608324A (nl) | 1975-08-22 | 1976-07-27 | Werkwijze voor het uit halfgeleiderschijven verwijderen van specifieke fouten in de kristalbouw. |
| FR7624886A FR2321325A1 (fr) | 1975-08-22 | 1976-08-16 | Procede pour eliminer des defauts de structure cristalline particuliers dans des plaquettes de semi-conducteur |
| DK373076A DK373076A (da) | 1975-08-22 | 1976-08-18 | Fremgangsmade til fjernelse af specifikke krystalstrukturfejl fra halvlederskiver |
| BE169962A BE845381A (fr) | 1975-08-22 | 1976-08-20 | Procede pour eliminer des defauts de structures cristalline particuliers dans des plaquettes de semi-conducteur |
| CH1062876A CH596879A5 (US20100012521A1-20100121-C00001.png) | 1975-08-22 | 1976-08-20 | |
| IT50964/76A IT1076467B (it) | 1975-08-22 | 1976-08-20 | Procedimento per ottenere piastrine di semi conduttori sosanzialmente esenti da difetti |
| JP51100473A JPS5226160A (en) | 1975-08-22 | 1976-08-23 | Method of eliminating intrinsic crystal defect from semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752537464 DE2537464A1 (de) | 1975-08-22 | 1975-08-22 | Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2537464A1 true DE2537464A1 (de) | 1977-03-03 |
Family
ID=5954629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752537464 Pending DE2537464A1 (de) | 1975-08-22 | 1975-08-22 | Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben |
Country Status (9)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144099A (en) * | 1977-10-31 | 1979-03-13 | International Business Machines Corporation | High performance silicon wafer and fabrication process |
| JPS54110783A (en) * | 1978-02-20 | 1979-08-30 | Hitachi Ltd | Semiconductor substrate and its manufacture |
| US4177084A (en) * | 1978-06-09 | 1979-12-04 | Hewlett-Packard Company | Method for producing a low defect layer of silicon-on-sapphire wafer |
| US4231809A (en) * | 1979-05-25 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Method of removing impurity metals from semiconductor devices |
| DE2927220A1 (de) * | 1979-07-05 | 1981-01-15 | Wacker Chemitronic | Verfahren zur stapelfehlerinduzierenden oberflaechenzerstoerung von halbleiterscheiben |
| US4257827A (en) * | 1979-11-13 | 1981-03-24 | International Business Machines Corporation | High efficiency gettering in silicon through localized superheated melt formation |
| JPS5680139A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS57104228A (en) * | 1980-12-22 | 1982-06-29 | Nec Corp | Manufacture of semiconductor device |
| US4665695A (en) | 1981-03-13 | 1987-05-19 | Trw Inc. | Hydrostatic load sense steering system |
| DE3148957A1 (de) * | 1981-12-10 | 1983-06-23 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | "verfahren zur rueckseitengetternden oberflaechenbehandlung von halbleiterscheiben" |
| JPS61159371A (ja) * | 1984-12-28 | 1986-07-19 | Fuji Seiki Seizosho:Kk | Ｉｃの基板用シリコンウェーハのブラスト装置 |
| US4659400A (en) * | 1985-06-27 | 1987-04-21 | General Instrument Corp. | Method for forming high yield epitaxial wafers |
| DE3737815A1 (de) * | 1987-11-06 | 1989-05-18 | Wacker Chemitronic | Siliciumscheiben zur erzeugung von oxidschichten hoher durchschlagsfestigkeit und verfahren zur ihrer herstellung |
| DE3934140A1 (de) * | 1989-10-12 | 1991-04-18 | Wacker Chemitronic | Verfahren zur die ausbildung von getterfaehigen zentren induzierenden oberflaechenbehandlung von halbleiterscheiben und dadurch erhaeltliche beidseitig polierte scheiben |
| KR100231607B1 (ko) * | 1996-12-31 | 1999-11-15 | 김영환 | 반도체 소자의 초저접합 형성방법 |
| JP2000294549A (ja) * | 1999-02-02 | 2000-10-20 | Nec Corp | 半導体装置及びその製造方法 |
| TW462085B (en) * | 2000-10-26 | 2001-11-01 | United Microelectronics Corp | Planarization of organic silicon low dielectric constant material by chemical mechanical polishing |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3701696A (en) * | 1969-08-20 | 1972-10-31 | Gen Electric | Process for simultaneously gettering,passivating and locating a junction within a silicon crystal |
| GB1334520A (en) * | 1970-06-12 | 1973-10-17 | Atomic Energy Authority Uk | Formation of electrically insulating layers in semiconducting materials |
| FR2191272A1 (US20100012521A1-20100121-C00001.png) * | 1972-06-27 | 1974-02-01 | Ibm France | |
| JPS5037348A (US20100012521A1-20100121-C00001.png) * | 1973-08-06 | 1975-04-08 | ||
| JPS5051665A (US20100012521A1-20100121-C00001.png) * | 1973-09-07 | 1975-05-08 | ||
| US3929529A (en) * | 1974-12-09 | 1975-12-30 | Ibm | Method for gettering contaminants in monocrystalline silicon |
| US3933530A (en) * | 1975-01-28 | 1976-01-20 | Rca Corporation | Method of radiation hardening and gettering semiconductor devices |
| US3997368A (en) * | 1975-06-24 | 1976-12-14 | Bell Telephone Laboratories, Incorporated | Elimination of stacking faults in silicon devices: a gettering process |
-
1975
- 1975-08-22 DE DE19752537464 patent/DE2537464A1/de active Pending
-
1976
- 1976-07-23 US US05/708,235 patent/US4042419A/en not_active Expired - Lifetime
- 1976-07-27 NL NL7608324A patent/NL7608324A/xx unknown
- 1976-08-16 FR FR7624886A patent/FR2321325A1/fr active Granted
- 1976-08-18 DK DK373076A patent/DK373076A/da unknown
- 1976-08-20 IT IT50964/76A patent/IT1076467B/it active
- 1976-08-20 CH CH1062876A patent/CH596879A5/xx not_active IP Right Cessation
- 1976-08-20 BE BE169962A patent/BE845381A/xx unknown
- 1976-08-23 JP JP51100473A patent/JPS5226160A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1076467B (it) | 1985-04-27 |
| JPS5226160A (en) | 1977-02-26 |
| FR2321325A1 (fr) | 1977-03-18 |
| BE845381A (fr) | 1977-02-21 |
| US4042419A (en) | 1977-08-16 |
| FR2321325B1 (US20100012521A1-20100121-C00001.png) | 1978-11-03 |
| DK373076A (da) | 1977-02-23 |
| NL7608324A (nl) | 1977-02-24 |
| CH596879A5 (US20100012521A1-20100121-C00001.png) | 1978-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2537464A1 (de) | Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben | |
| EP0001794B1 (de) | Verfahren zum Herstellen einer gegetterten Halbleiterscheibe | |
| DE19938340C1 (de) | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe | |
| EP3387166B1 (de) | Halbleiterscheibe aus einkristallinem silizium und verfahren zu deren herstellung | |
| WO2016116180A1 (de) | Epitaktisch beschichtete halbleiterscheibe und verfahren zur herstellung einer epitakisch beschichteten halbleiterscheibe | |
| DE602004004658T4 (de) | Verfahren zur epiready-oberflächen-behandlung auf sic-dünnschichten | |
| EP0769809B1 (de) | Verfahren zum Beseitigen von Kristallfehlern in Siliziumscheiben | |
| US4410395A (en) | Method of removing bulk impurities from semiconductor wafers | |
| DE19823904A1 (de) | Hochebene Halbleiterscheibe aus Silicium und Verfahren zur Herstellung von Halbleiterscheiben | |
| JPS583374B2 (ja) | シリコン単結晶の処理方法 | |
| DE10336271B4 (de) | Siliciumscheibe und Verfahren zu deren Herstellung | |
| JP2010056316A (ja) | シリコンウェーハ及びその製造方法 | |
| US3266961A (en) | Method of etching si and ge semiconductor bodies | |
| JPH0561240B2 (US20100012521A1-20100121-C00001.png) | ||
| JPS6019144B2 (ja) | シリコンウエ−ハの製造法 | |
| JP4348539B2 (ja) | 非磁性ガーネット基板の製造方法とその非磁性ガーネット基板およびこの基板を用いて得られるビスマス置換型磁性ガーネット膜 | |
| JP2652344B2 (ja) | シリコンウエーハ | |
| DE102016114940B4 (de) | Thermisches Verarbeitungsverfahren für einen Wafer | |
| JPH0436457B2 (US20100012521A1-20100121-C00001.png) | ||
| DE112021001085T5 (de) | Herstellungsverfahren für Halbleiter-Siliziumwafer | |
| JP3894685B2 (ja) | 酸化物ガーネット単結晶膜の製造方法 | |
| JP2652346B2 (ja) | シリコンウエーハの製造方法 | |
| JPS6227732B2 (US20100012521A1-20100121-C00001.png) | ||
| DE4011993C2 (US20100012521A1-20100121-C00001.png) | ||
| DD145144A1 (de) | Verfahren zur herstellung von gett rfaehigen halbleiterscheiben,insbesondere siliziumschei en |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |