DE2536704A1 - Lichtemittierende diode - Google Patents

Lichtemittierende diode

Info

Publication number
DE2536704A1
DE2536704A1 DE19752536704 DE2536704A DE2536704A1 DE 2536704 A1 DE2536704 A1 DE 2536704A1 DE 19752536704 DE19752536704 DE 19752536704 DE 2536704 A DE2536704 A DE 2536704A DE 2536704 A1 DE2536704 A1 DE 2536704A1
Authority
DE
Germany
Prior art keywords
light
emitting diode
lens
lens structure
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752536704
Other languages
German (de)
English (en)
Inventor
Frederick David King
Anthony John Springthorpe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co Ltd filed Critical Northern Electric Co Ltd
Publication of DE2536704A1 publication Critical patent/DE2536704A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19752536704 1974-09-10 1975-08-18 Lichtemittierende diode Pending DE2536704A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA208,827A CA1007736A (en) 1974-09-10 1974-09-10 Integral lens light emitting diode

Publications (1)

Publication Number Publication Date
DE2536704A1 true DE2536704A1 (de) 1976-03-18

Family

ID=4101088

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752536704 Pending DE2536704A1 (de) 1974-09-10 1975-08-18 Lichtemittierende diode

Country Status (7)

Country Link
JP (2) JPS5152792A (xx)
CA (1) CA1007736A (xx)
DE (1) DE2536704A1 (xx)
FR (1) FR2284990A1 (xx)
GB (1) GB1487024A (xx)
NL (1) NL7509408A (xx)
SE (1) SE407129B (xx)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
EP1807879B1 (de) * 2004-09-27 2020-01-22 OSRAM Opto Semiconductors GmbH Optoelektronischer Dünnfilmchip

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478684A (en) * 1977-12-05 1979-06-22 Nec Corp Semiconductor luminous element
FR2554606B1 (fr) * 1983-11-04 1987-04-10 Thomson Csf Dispositif optique de concentration du rayonnement lumineux emis par une diode electroluminescente, et diode electroluminescente comportant un tel dispositif
JPS63155083A (ja) * 1986-12-19 1988-06-28 小林 寛重 三層ステツカ−およびステツカ−付名刺
JPH0727494Y2 (ja) * 1987-06-18 1995-06-21 陽子 藤田 宅配用荷札
JPH0511569Y2 (xx) * 1988-06-06 1993-03-23
GB0017655D0 (en) * 2000-07-19 2000-09-06 Secr Defence Light emtting diode arrangements
JP2004158557A (ja) * 2002-11-05 2004-06-03 Shurai Kagi Kofun Yugenkoshi 類似フリップチップ型の発光ダイオード装置パッケージ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123435B2 (xx) * 1971-08-18 1976-07-16

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
US7026657B2 (en) 2000-04-19 2006-04-11 Osram Gmbh High radiance led chip and a method for producing same
US7306960B2 (en) 2000-04-19 2007-12-11 Osram Gmbh High radiance LED chip and a method for producing same
EP1807879B1 (de) * 2004-09-27 2020-01-22 OSRAM Opto Semiconductors GmbH Optoelektronischer Dünnfilmchip

Also Published As

Publication number Publication date
CA1007736A (en) 1977-03-29
NL7509408A (nl) 1976-03-12
SE7510038L (sv) 1976-03-11
SE407129B (sv) 1979-03-12
FR2284990A1 (fr) 1976-04-09
JPS6017910Y2 (ja) 1985-05-31
JPS5152792A (xx) 1976-05-10
GB1487024A (en) 1977-09-28
JPS5918455U (ja) 1984-02-04

Similar Documents

Publication Publication Date Title
DE2509533A1 (de) Sonnenzelle
DE19807758B4 (de) Lichtemittierende Diodenstruktur und Verfahren zu deren Herstellung
DE2538471C2 (xx)
DE2347802C2 (de) Verfahren zur Herstellung eines dielektrischen optischen Wellenleiters, sowie die hiernach hergestellten optischen Wellenleiter
DE2543471A1 (de) Leuchtdiodenanordnung mit gewoelbter struktur
DE2527179A1 (de) Halbleiterbauelement mit heterostruktur sowie herstellungsverfahren hierfuer
DE3924197A1 (de) Halbleiterlaser
DE19911717A1 (de) Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
DE2608562A1 (de) Halbleiteranordnung zum erzeugen inkohaerenter strahlung und verfahren zu deren herstellung
DE3415576A1 (de) Halbleiterduennschichtlinse
DE19939471B4 (de) Halbleiterleuchtdiode mit Stromdiffusionsschicht
DE2920454C2 (de) Halbleiterlaser und Verfahren zu dessen Herstellung
DE2536704A1 (de) Lichtemittierende diode
DE2915888C2 (xx)
DE69630714T2 (de) Lichtemittierende Halbleitervorrichtung und deren Herstellung
DE69635180T2 (de) Lichtemittierende Halbleitervorrichtung
DE4130536A1 (de) Laserdiode fuer sichtbares licht
DE3221497A1 (de) Stabilisierter halbleiterlaser
DE2538248B2 (de) Elektrolumineszenz-Diode und Verfahren zu ihrer Herstellung
DE19945465A1 (de) Photonische Halbleitervorrichtung
DE4010889A1 (de) Verfahren zum herstellen einer vergrabenen laserdiode mit heterostruktur
DE2507357C2 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
EP0058231B1 (de) Herstellung von Lumineszenz- oder Laserdioden mit intern begrenzter Leuchtfläche
EP0002658B1 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE2732808A1 (de) Licht emittierende einrichtung und verfahren zu ihrer herstellung

Legal Events

Date Code Title Description
OHJ Non-payment of the annual fee