DE2530647C3 - Schaltungsanordnung für eine MOS-Ausgangsstufe - Google Patents

Schaltungsanordnung für eine MOS-Ausgangsstufe

Info

Publication number
DE2530647C3
DE2530647C3 DE19752530647 DE2530647A DE2530647C3 DE 2530647 C3 DE2530647 C3 DE 2530647C3 DE 19752530647 DE19752530647 DE 19752530647 DE 2530647 A DE2530647 A DE 2530647A DE 2530647 C3 DE2530647 C3 DE 2530647C3
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
mos
circuit arrangement
mos field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19752530647
Other languages
German (de)
English (en)
Other versions
DE2530647B2 (de
DE2530647A1 (de
Inventor
Klaus-Dieter Dipl.-Phys. 8011 Vaterstetten Bigall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19752530647 priority Critical patent/DE2530647C3/de
Priority to IT2512676A priority patent/IT1067051B/it
Priority to FR7620874A priority patent/FR2317806A1/fr
Priority to GB2836976A priority patent/GB1560837A/en
Priority to JP51081884A priority patent/JPS5211750A/ja
Publication of DE2530647A1 publication Critical patent/DE2530647A1/de
Publication of DE2530647B2 publication Critical patent/DE2530647B2/de
Application granted granted Critical
Publication of DE2530647C3 publication Critical patent/DE2530647C3/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
DE19752530647 1975-07-09 1975-07-09 Schaltungsanordnung für eine MOS-Ausgangsstufe Expired DE2530647C3 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19752530647 DE2530647C3 (de) 1975-07-09 1975-07-09 Schaltungsanordnung für eine MOS-Ausgangsstufe
IT2512676A IT1067051B (it) 1975-07-09 1976-07-08 Disposizione circuitale per uno stadio di uscita mos
FR7620874A FR2317806A1 (fr) 1975-07-09 1976-07-08 Montage pour un etage de sortie mos
GB2836976A GB1560837A (en) 1975-07-09 1976-07-08 Transistor output stages
JP51081884A JPS5211750A (en) 1975-07-09 1976-07-09 Circuit for mos output stage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752530647 DE2530647C3 (de) 1975-07-09 1975-07-09 Schaltungsanordnung für eine MOS-Ausgangsstufe

Publications (3)

Publication Number Publication Date
DE2530647A1 DE2530647A1 (de) 1977-01-20
DE2530647B2 DE2530647B2 (de) 1979-10-31
DE2530647C3 true DE2530647C3 (de) 1980-07-17

Family

ID=5951071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752530647 Expired DE2530647C3 (de) 1975-07-09 1975-07-09 Schaltungsanordnung für eine MOS-Ausgangsstufe

Country Status (5)

Country Link
JP (1) JPS5211750A (enExample)
DE (1) DE2530647C3 (enExample)
FR (1) FR2317806A1 (enExample)
GB (1) GB1560837A (enExample)
IT (1) IT1067051B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821917U (ja) * 1981-08-05 1983-02-10 株式会社田村電機製作所 弾条スイツチ構造
JPS59200508A (ja) * 1983-04-26 1984-11-13 Pioneer Electronic Corp 増幅器
IT1186108B (it) * 1985-11-27 1987-11-18 Sgs Microelettronica Spa Circuito ripetitore di tensione a basso offset

Also Published As

Publication number Publication date
DE2530647B2 (de) 1979-10-31
FR2317806A1 (fr) 1977-02-04
IT1067051B (it) 1985-03-12
GB1560837A (en) 1980-02-13
FR2317806B1 (enExample) 1983-04-15
JPS5211750A (en) 1977-01-28
DE2530647A1 (de) 1977-01-20

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee