DE2525482A1 - Fuer halbleiterbauteile geeignete materialzusammensetzungen - Google Patents

Fuer halbleiterbauteile geeignete materialzusammensetzungen

Info

Publication number
DE2525482A1
DE2525482A1 DE19752525482 DE2525482A DE2525482A1 DE 2525482 A1 DE2525482 A1 DE 2525482A1 DE 19752525482 DE19752525482 DE 19752525482 DE 2525482 A DE2525482 A DE 2525482A DE 2525482 A1 DE2525482 A1 DE 2525482A1
Authority
DE
Germany
Prior art keywords
silicon
layer
metal
heat
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752525482
Other languages
German (de)
English (en)
Inventor
Robert Amantea
Marek Antoni Szpak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2525482A1 publication Critical patent/DE2525482A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5893—Mixing of deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19752525482 1974-06-13 1975-06-07 Fuer halbleiterbauteile geeignete materialzusammensetzungen Pending DE2525482A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47904974A 1974-06-13 1974-06-13

Publications (1)

Publication Number Publication Date
DE2525482A1 true DE2525482A1 (de) 1976-01-02

Family

ID=23902455

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752525482 Pending DE2525482A1 (de) 1974-06-13 1975-06-07 Fuer halbleiterbauteile geeignete materialzusammensetzungen

Country Status (9)

Country Link
JP (1) JPS5112773A (cs)
AU (1) AU8195575A (cs)
BE (1) BE830034A (cs)
DE (1) DE2525482A1 (cs)
FR (1) FR2274579A1 (cs)
GB (1) GB1505165A (cs)
IN (1) IN143383B (cs)
NL (1) NL7507015A (cs)
SE (1) SE7506733L (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002165A1 (fr) * 1977-11-11 1979-05-30 International Business Machines Corporation Procédé de fabrication d'une structure de conducteurs et application aux transistors à effet de champ
EP0077535A1 (de) * 1981-10-20 1983-04-27 Siemens Aktiengesellschaft Verfahren zum Herstellen von Schichten aus hochschmelzenden Metallen bei niedrigen Substrattemperaturen
EP0100454A1 (en) * 1982-07-05 1984-02-15 Kabushiki Kaisha Toshiba Semiconductor device having a conductive layer consisting of a high-melting point metal silicide and a method for manufacturing such a semiconductor device
EP0096773A3 (en) * 1982-06-11 1984-02-22 International Business Machines Corporation Method of making high dielectric constant insulators and capacitors using same
DE10207130A1 (de) * 2002-02-20 2003-09-11 Infineon Technologies Ag Verfahren zur Herstellung eines Bauelements sowie Bauelement mit einer Metallschicht und einer Isolationsschicht

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493990A (en) * 1978-01-06 1979-07-25 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices
JPS63265448A (ja) * 1987-11-27 1988-11-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Ｍｏｓ型半導体装置の製造方法
GB2291642B (en) * 1993-04-15 1997-06-04 Secr Defence Pyrotechnic material
GB9307846D0 (en) * 1993-04-15 1993-06-02 Secr Defence Pyrothechnic material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002165A1 (fr) * 1977-11-11 1979-05-30 International Business Machines Corporation Procédé de fabrication d'une structure de conducteurs et application aux transistors à effet de champ
EP0077535A1 (de) * 1981-10-20 1983-04-27 Siemens Aktiengesellschaft Verfahren zum Herstellen von Schichten aus hochschmelzenden Metallen bei niedrigen Substrattemperaturen
EP0096773A3 (en) * 1982-06-11 1984-02-22 International Business Machines Corporation Method of making high dielectric constant insulators and capacitors using same
EP0100454A1 (en) * 1982-07-05 1984-02-15 Kabushiki Kaisha Toshiba Semiconductor device having a conductive layer consisting of a high-melting point metal silicide and a method for manufacturing such a semiconductor device
DE10207130A1 (de) * 2002-02-20 2003-09-11 Infineon Technologies Ag Verfahren zur Herstellung eines Bauelements sowie Bauelement mit einer Metallschicht und einer Isolationsschicht
US6737692B2 (en) 2002-02-20 2004-05-18 Infineon Technologies Ag Method for fabricating a component, and component having a metal layer and an insulation layer
DE10207130B4 (de) * 2002-02-20 2007-09-27 Infineon Technologies Ag Verfahren zur Herstellung eines Bauelements sowie Bauelement mit einer Edelmetallschicht, einer Edelmetallsilizidschicht und einer oxidierten Silizidschicht

Also Published As

Publication number Publication date
JPS5112773A (cs) 1976-01-31
IN143383B (cs) 1977-11-12
AU8195575A (en) 1976-12-16
SE7506733L (sv) 1975-12-15
GB1505165A (en) 1978-03-30
FR2274579A1 (fr) 1976-01-09
NL7507015A (nl) 1975-12-16
BE830034A (nl) 1975-10-01

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