DE2457992A1 - Halbleiterspeichersystem - Google Patents
HalbleiterspeichersystemInfo
- Publication number
- DE2457992A1 DE2457992A1 DE19742457992 DE2457992A DE2457992A1 DE 2457992 A1 DE2457992 A1 DE 2457992A1 DE 19742457992 DE19742457992 DE 19742457992 DE 2457992 A DE2457992 A DE 2457992A DE 2457992 A1 DE2457992 A1 DE 2457992A1
- Authority
- DE
- Germany
- Prior art keywords
- terminal
- transistor
- gate
- connection
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 230000015654 memory Effects 0.000 claims description 129
- 230000005669 field effect Effects 0.000 claims description 26
- 230000000295 complement effect Effects 0.000 claims description 6
- 238000003491 array Methods 0.000 claims description 5
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 99
- 101100206210 Camellia sinensis TCS4 gene Proteins 0.000 description 18
- 208000023089 Treacher Collins syndrome 4 Diseases 0.000 description 18
- 102100040653 Tryptophan 2,3-dioxygenase Human genes 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 14
- 101000598806 Homo sapiens Probable tRNA N6-adenosine threonylcarbamoyltransferase Proteins 0.000 description 12
- 101000860173 Myxococcus xanthus C-factor Proteins 0.000 description 12
- 102100037775 Probable tRNA N6-adenosine threonylcarbamoyltransferase Human genes 0.000 description 12
- 101710136122 Tryptophan 2,3-dioxygenase Proteins 0.000 description 11
- 239000013256 coordination polymer Substances 0.000 description 11
- 230000008878 coupling Effects 0.000 description 11
- 238000010168 coupling process Methods 0.000 description 11
- 238000005859 coupling reaction Methods 0.000 description 11
- 101100206208 Camellia sinensis TCS2 gene Proteins 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 101100206211 Camellia sinensis TCS5 gene Proteins 0.000 description 8
- 101000655352 Homo sapiens Telomerase reverse transcriptase Proteins 0.000 description 8
- 102100032938 Telomerase reverse transcriptase Human genes 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 101100206195 Arabidopsis thaliana TCP2 gene Proteins 0.000 description 6
- 101100536570 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CCT2 gene Proteins 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 101000666730 Homo sapiens T-complex protein 1 subunit alpha Proteins 0.000 description 4
- 101100313175 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) TCD1 gene Proteins 0.000 description 4
- 101100313176 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) TCD2 gene Proteins 0.000 description 4
- 102100038410 T-complex protein 1 subunit alpha Human genes 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 101000892398 Homo sapiens Tryptophan 2,3-dioxygenase Proteins 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 101150037520 CSA gene Proteins 0.000 description 1
- 101150109219 CSB gene Proteins 0.000 description 1
- 101100536546 Caenorhabditis elegans tcl-2 gene Proteins 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42329573A | 1973-12-10 | 1973-12-10 | |
| US423297A US3859545A (en) | 1973-12-10 | 1973-12-10 | Low power dynamic control circuitry |
| US423296A US3859641A (en) | 1973-12-10 | 1973-12-10 | Dynamic buffer circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2457992A1 true DE2457992A1 (de) | 1975-06-26 |
Family
ID=27411402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742457992 Pending DE2457992A1 (de) | 1973-12-10 | 1974-12-07 | Halbleiterspeichersystem |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5092053A (enrdf_load_stackoverflow) |
| DE (1) | DE2457992A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2254089A1 (enrdf_load_stackoverflow) |
| IT (1) | IT1024990B (enrdf_load_stackoverflow) |
| NL (1) | NL7415746A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5472934A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Data processor |
-
1974
- 1974-12-03 NL NL7415746A patent/NL7415746A/xx unknown
- 1974-12-05 IT IT7053974A patent/IT1024990B/it active
- 1974-12-07 DE DE19742457992 patent/DE2457992A1/de active Pending
- 1974-12-09 FR FR7440320A patent/FR2254089A1/fr not_active Withdrawn
- 1974-12-10 JP JP49141234A patent/JPS5092053A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5092053A (enrdf_load_stackoverflow) | 1975-07-23 |
| IT1024990B (it) | 1978-07-20 |
| FR2254089A1 (en) | 1975-07-04 |
| NL7415746A (nl) | 1975-06-12 |
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