FR2254089A1 - Low power dynamic control cct. - includes a voltage pulse generator cct. and insulated gate FETs on integrated chip - Google Patents
Low power dynamic control cct. - includes a voltage pulse generator cct. and insulated gate FETs on integrated chipInfo
- Publication number
- FR2254089A1 FR2254089A1 FR7440320A FR7440320A FR2254089A1 FR 2254089 A1 FR2254089 A1 FR 2254089A1 FR 7440320 A FR7440320 A FR 7440320A FR 7440320 A FR7440320 A FR 7440320A FR 2254089 A1 FR2254089 A1 FR 2254089A1
- Authority
- FR
- France
- Prior art keywords
- cct
- voltage pulse
- pulse generator
- insulated gate
- integrated chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42329573A | 1973-12-10 | 1973-12-10 | |
US423297A US3859545A (en) | 1973-12-10 | 1973-12-10 | Low power dynamic control circuitry |
US423296A US3859641A (en) | 1973-12-10 | 1973-12-10 | Dynamic buffer circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2254089A1 true FR2254089A1 (en) | 1975-07-04 |
Family
ID=27411402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7440320A Withdrawn FR2254089A1 (en) | 1973-12-10 | 1974-12-09 | Low power dynamic control cct. - includes a voltage pulse generator cct. and insulated gate FETs on integrated chip |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5092053A (enrdf_load_stackoverflow) |
DE (1) | DE2457992A1 (enrdf_load_stackoverflow) |
FR (1) | FR2254089A1 (enrdf_load_stackoverflow) |
IT (1) | IT1024990B (enrdf_load_stackoverflow) |
NL (1) | NL7415746A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5472934A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Data processor |
-
1974
- 1974-12-03 NL NL7415746A patent/NL7415746A/xx unknown
- 1974-12-05 IT IT7053974A patent/IT1024990B/it active
- 1974-12-07 DE DE19742457992 patent/DE2457992A1/de active Pending
- 1974-12-09 FR FR7440320A patent/FR2254089A1/fr not_active Withdrawn
- 1974-12-10 JP JP49141234A patent/JPS5092053A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2457992A1 (de) | 1975-06-26 |
JPS5092053A (enrdf_load_stackoverflow) | 1975-07-23 |
IT1024990B (it) | 1978-07-20 |
NL7415746A (nl) | 1975-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |