DE2433981C3 - Halbleitersprechpfadschalter - Google Patents

Halbleitersprechpfadschalter

Info

Publication number
DE2433981C3
DE2433981C3 DE2433981A DE2433981A DE2433981C3 DE 2433981 C3 DE2433981 C3 DE 2433981C3 DE 2433981 A DE2433981 A DE 2433981A DE 2433981 A DE2433981 A DE 2433981A DE 2433981 C3 DE2433981 C3 DE 2433981C3
Authority
DE
Germany
Prior art keywords
base
semiconductor
switching elements
switch
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2433981A
Other languages
German (de)
English (en)
Other versions
DE2433981A1 (de
DE2433981B2 (enrdf_load_stackoverflow
Inventor
Shinzi Fujisawa Okuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2433981A1 publication Critical patent/DE2433981A1/de
Publication of DE2433981B2 publication Critical patent/DE2433981B2/de
Application granted granted Critical
Publication of DE2433981C3 publication Critical patent/DE2433981C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Electronic Switches (AREA)
  • Element Separation (AREA)
DE2433981A 1973-07-23 1974-07-15 Halbleitersprechpfadschalter Expired DE2433981C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1973084780U JPS5032942U (enrdf_load_stackoverflow) 1973-07-23 1973-07-23

Publications (3)

Publication Number Publication Date
DE2433981A1 DE2433981A1 (de) 1975-02-13
DE2433981B2 DE2433981B2 (enrdf_load_stackoverflow) 1975-09-04
DE2433981C3 true DE2433981C3 (de) 1985-01-10

Family

ID=13840191

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2433981A Expired DE2433981C3 (de) 1973-07-23 1974-07-15 Halbleitersprechpfadschalter

Country Status (3)

Country Link
JP (1) JPS5032942U (enrdf_load_stackoverflow)
CA (1) CA1026467A (enrdf_load_stackoverflow)
DE (1) DE2433981C3 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2049283B (en) * 1978-12-20 1983-07-27 Western Electric Co High voltage dielectrically isolated solid-state switch
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
US4587545A (en) * 1978-12-20 1986-05-06 At&T Bell Laboratories High voltage dielectrically isolated remote gate solid-state switch
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
US4587656A (en) * 1979-12-28 1986-05-06 At&T Bell Laboratories High voltage solid-state switch
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
JPH06151573A (ja) * 1992-11-06 1994-05-31 Hitachi Ltd 半導体集積回路装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3471922A (en) * 1966-06-02 1969-10-14 Raytheon Co Monolithic integrated circuitry with dielectric isolated functional regions
US3431468A (en) * 1967-04-17 1969-03-04 Motorola Inc Buried integrated circuit radiation shields

Also Published As

Publication number Publication date
JPS5032942U (enrdf_load_stackoverflow) 1975-04-10
CA1026467A (en) 1978-02-14
DE2433981A1 (de) 1975-02-13
DE2433981B2 (enrdf_load_stackoverflow) 1975-09-04

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee