CA1026467A - Semiconductor speech path switch - Google Patents
Semiconductor speech path switchInfo
- Publication number
- CA1026467A CA1026467A CA205,355A CA205355A CA1026467A CA 1026467 A CA1026467 A CA 1026467A CA 205355 A CA205355 A CA 205355A CA 1026467 A CA1026467 A CA 1026467A
- Authority
- CA
- Canada
- Prior art keywords
- path switch
- speech path
- semiconductor speech
- semiconductor
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q3/00—Selecting arrangements
- H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
- H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
- H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8478073U JPS5032942U (en) | 1973-07-23 | 1973-07-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1026467A true CA1026467A (en) | 1978-02-14 |
Family
ID=13840191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA205,355A Expired CA1026467A (en) | 1973-07-23 | 1974-07-22 | Semiconductor speech path switch |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5032942U (en) |
CA (1) | CA1026467A (en) |
DE (1) | DE2433981C3 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587545A (en) * | 1978-12-20 | 1986-05-06 | At&T Bell Laboratories | High voltage dielectrically isolated remote gate solid-state switch |
GB2049283B (en) * | 1978-12-20 | 1983-07-27 | Western Electric Co | High voltage dielectrically isolated solid-state switch |
US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
US4602268A (en) * | 1978-12-20 | 1986-07-22 | At&T Bell Laboratories | High voltage dielectrically isolated dual gate solid-state switch |
CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
US4587656A (en) * | 1979-12-28 | 1986-05-06 | At&T Bell Laboratories | High voltage solid-state switch |
JPH06151573A (en) * | 1992-11-06 | 1994-05-31 | Hitachi Ltd | Semiconductor integrated circuit device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3381182A (en) * | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
US3471922A (en) * | 1966-06-02 | 1969-10-14 | Raytheon Co | Monolithic integrated circuitry with dielectric isolated functional regions |
US3431468A (en) * | 1967-04-17 | 1969-03-04 | Motorola Inc | Buried integrated circuit radiation shields |
-
1973
- 1973-07-23 JP JP8478073U patent/JPS5032942U/ja active Pending
-
1974
- 1974-07-15 DE DE19742433981 patent/DE2433981C3/en not_active Expired
- 1974-07-22 CA CA205,355A patent/CA1026467A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5032942U (en) | 1975-04-10 |
DE2433981C3 (en) | 1985-01-10 |
DE2433981A1 (en) | 1975-02-13 |
DE2433981B2 (en) | 1975-09-04 |
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