DE2429036A1 - Feldeffekt-flaechentransistor fuer schaltvorgaenge im mikrowellenbereich - Google Patents

Feldeffekt-flaechentransistor fuer schaltvorgaenge im mikrowellenbereich

Info

Publication number
DE2429036A1
DE2429036A1 DE2429036A DE2429036A DE2429036A1 DE 2429036 A1 DE2429036 A1 DE 2429036A1 DE 2429036 A DE2429036 A DE 2429036A DE 2429036 A DE2429036 A DE 2429036A DE 2429036 A1 DE2429036 A1 DE 2429036A1
Authority
DE
Germany
Prior art keywords
substrate
solid
state switch
layer
switch according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2429036A
Other languages
German (de)
English (en)
Inventor
Raymond Harkless Dean
Louis Sebastian Napoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2429036A1 publication Critical patent/DE2429036A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
DE2429036A 1973-06-22 1974-06-18 Feldeffekt-flaechentransistor fuer schaltvorgaenge im mikrowellenbereich Pending DE2429036A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00372648A US3855613A (en) 1973-06-22 1973-06-22 A solid state switch using an improved junction field effect transistor

Publications (1)

Publication Number Publication Date
DE2429036A1 true DE2429036A1 (de) 1975-01-16

Family

ID=23469081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2429036A Pending DE2429036A1 (de) 1973-06-22 1974-06-18 Feldeffekt-flaechentransistor fuer schaltvorgaenge im mikrowellenbereich

Country Status (10)

Country Link
US (1) US3855613A (enExample)
JP (1) JPS5038474A (enExample)
BE (1) BE816728A (enExample)
CA (1) CA1005927A (enExample)
DE (1) DE2429036A1 (enExample)
FR (1) FR2234664B1 (enExample)
GB (1) GB1469980A (enExample)
IT (1) IT1012303B (enExample)
NL (1) NL7408391A (enExample)
SE (1) SE389766B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3338895A1 (de) * 1982-11-01 1984-07-12 General Electric Co., Schenectady, N.Y. Digitales phasenglied fuer mikrowellenbetrieb

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104672A (en) * 1976-10-29 1978-08-01 Bell Telephone Laboratories, Incorporated High power gallium arsenide schottky barrier field effect transistor
JPS5427672U (enExample) * 1977-07-25 1979-02-23
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
GB2207805B (en) * 1987-08-06 1991-12-11 Plessey Co Plc Improvements in or relating to microwave phase shifters
US6191754B1 (en) * 1998-08-18 2001-02-20 Northrop Grumman Corporation Antenna system using time delays with mercury wetted switches
US6642578B1 (en) 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3405330A (en) * 1965-11-10 1968-10-08 Fairchild Camera Instr Co Remote-cutoff field effect transistor
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
US3657615A (en) * 1970-06-30 1972-04-18 Westinghouse Electric Corp Low thermal impedance field effect transistor
US3725136A (en) * 1971-06-01 1973-04-03 Texas Instruments Inc Junction field effect transistor and method of fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3338895A1 (de) * 1982-11-01 1984-07-12 General Electric Co., Schenectady, N.Y. Digitales phasenglied fuer mikrowellenbetrieb

Also Published As

Publication number Publication date
NL7408391A (enExample) 1974-12-24
US3855613A (en) 1974-12-17
SE389766B (sv) 1976-11-15
BE816728A (fr) 1974-10-16
GB1469980A (en) 1977-04-14
FR2234664A1 (enExample) 1975-01-17
JPS5038474A (enExample) 1975-04-09
CA1005927A (en) 1977-02-22
FR2234664B1 (enExample) 1978-07-07
SE7408022L (enExample) 1974-12-23
AU7002374A (en) 1975-12-18
IT1012303B (it) 1977-03-10

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