DE2420789C3 - Ladungsspeicherplatte für eine elektronische Speicherröhre - Google Patents
Ladungsspeicherplatte für eine elektronische SpeicherröhreInfo
- Publication number
- DE2420789C3 DE2420789C3 DE19742420789 DE2420789A DE2420789C3 DE 2420789 C3 DE2420789 C3 DE 2420789C3 DE 19742420789 DE19742420789 DE 19742420789 DE 2420789 A DE2420789 A DE 2420789A DE 2420789 C3 DE2420789 C3 DE 2420789C3
- Authority
- DE
- Germany
- Prior art keywords
- storage
- insulating material
- insulating
- electron beam
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 title claims description 98
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 72
- 239000000377 silicon dioxide Substances 0.000 claims description 36
- 235000012239 silicon dioxide Nutrition 0.000 claims description 35
- 238000010894 electron beam technology Methods 0.000 claims description 24
- 239000011810 insulating material Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 230000005865 ionizing radiation Effects 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000012217 deletion Methods 0.000 description 3
- 230000037430 deletion Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000036039 immunity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43025774A | 1974-01-02 | 1974-01-02 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2420789A1 DE2420789A1 (de) | 1975-07-10 |
| DE2420789B2 DE2420789B2 (de) | 1979-12-06 |
| DE2420789C3 true DE2420789C3 (de) | 1980-08-21 |
Family
ID=23706754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742420789 Expired DE2420789C3 (de) | 1974-01-02 | 1974-04-29 | Ladungsspeicherplatte für eine elektronische Speicherröhre |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5530656B2 (enExample) |
| CA (1) | CA1044744A (enExample) |
| DE (1) | DE2420789C3 (enExample) |
| FR (1) | FR2256529B1 (enExample) |
| GB (1) | GB1478594A (enExample) |
| IT (1) | IT1021128B (enExample) |
| NL (1) | NL7407172A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10241418B2 (en) * | 2014-12-01 | 2019-03-26 | Asml Netherlands B.V. | Method and apparatus for obtaining diagnostic information relating to a lithographic manufacturing process, lithographic processing system including diagnostic apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4849378A (enExample) * | 1971-10-22 | 1973-07-12 | ||
| JPS49118366A (enExample) * | 1973-03-10 | 1974-11-12 |
-
1974
- 1974-04-08 CA CA197,028A patent/CA1044744A/en not_active Expired
- 1974-04-29 DE DE19742420789 patent/DE2420789C3/de not_active Expired
- 1974-05-09 JP JP5169574A patent/JPS5530656B2/ja not_active Expired
- 1974-05-15 FR FR7416924A patent/FR2256529B1/fr not_active Expired
- 1974-05-29 NL NL7407172A patent/NL7407172A/xx not_active Application Discontinuation
- 1974-06-07 GB GB2000174A patent/GB1478594A/en not_active Expired
- 1974-09-06 IT IT2700074A patent/IT1021128B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IT1021128B (it) | 1978-01-30 |
| FR2256529A1 (enExample) | 1975-07-25 |
| GB1478594A (en) | 1977-07-06 |
| FR2256529B1 (enExample) | 1979-01-26 |
| DE2420789A1 (de) | 1975-07-10 |
| NL7407172A (nl) | 1975-07-04 |
| JPS5099677A (enExample) | 1975-08-07 |
| DE2420789B2 (de) | 1979-12-06 |
| CA1044744A (en) | 1978-12-19 |
| JPS5530656B2 (enExample) | 1980-08-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |