DE2411517B2 - Verfahren zum herstellen eines lichtempfindlichen halbleiterelementes - Google Patents

Verfahren zum herstellen eines lichtempfindlichen halbleiterelementes

Info

Publication number
DE2411517B2
DE2411517B2 DE19742411517 DE2411517A DE2411517B2 DE 2411517 B2 DE2411517 B2 DE 2411517B2 DE 19742411517 DE19742411517 DE 19742411517 DE 2411517 A DE2411517 A DE 2411517A DE 2411517 B2 DE2411517 B2 DE 2411517B2
Authority
DE
Germany
Prior art keywords
layer
conductive
oxide
translucent
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19742411517
Other languages
German (de)
English (en)
Other versions
DE2411517A1 (de
Inventor
Yasuo Koganei; Yamamoto Hideaki Kokubunji; Ooki Keiko Tachikawa; Goto Naohiro Machida; Takigawa Toru Mobara; Tanaka (Japan)
Original Assignee
Nippon Hoso Kyokei; Hitachi, Ltd.; Tokio
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Hoso Kyokei; Hitachi, Ltd.; Tokio filed Critical Nippon Hoso Kyokei; Hitachi, Ltd.; Tokio
Publication of DE2411517A1 publication Critical patent/DE2411517A1/de
Publication of DE2411517B2 publication Critical patent/DE2411517B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
DE19742411517 1973-03-12 1974-03-11 Verfahren zum herstellen eines lichtempfindlichen halbleiterelementes Ceased DE2411517B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48028022A JPS5137155B2 (https=) 1973-03-12 1973-03-12

Publications (2)

Publication Number Publication Date
DE2411517A1 DE2411517A1 (de) 1974-09-26
DE2411517B2 true DE2411517B2 (de) 1976-02-19

Family

ID=12237111

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742411517 Ceased DE2411517B2 (de) 1973-03-12 1974-03-11 Verfahren zum herstellen eines lichtempfindlichen halbleiterelementes

Country Status (6)

Country Link
US (1) US3941672A (https=)
JP (1) JPS5137155B2 (https=)
DE (1) DE2411517B2 (https=)
FR (1) FR2221817B1 (https=)
GB (1) GB1465367A (https=)
NL (1) NL159824B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244194A (en) * 1975-10-03 1977-04-06 Hitachi Ltd Photoelectric conversion device
JPS5256097A (en) * 1975-11-04 1977-05-09 Hitachi Ltd Preparing of target of vidicon
US4062038A (en) * 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
JPS535523A (en) * 1976-07-05 1978-01-19 Hitachi Ltd Pickup tube target
US4339300A (en) * 1977-07-25 1982-07-13 Noble Lowell A Process for smoothing surfaces of crystalline materials
JPS5696443A (en) * 1980-12-12 1981-08-04 Hitachi Ltd Manufacture of germanium-oxide film for picture tube target
US4584427A (en) * 1984-10-22 1986-04-22 Atlantic Richfield Company Thin film solar cell with free tin on tin oxide transparent conductor
DE3650362T2 (de) * 1986-01-06 1996-01-25 Sel Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.
US4690746A (en) * 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
JP2686266B2 (ja) * 1988-01-28 1997-12-08 株式会社日立製作所 受光素子の製造方法
EP0631301A1 (de) * 1993-06-21 1994-12-28 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Herstellverfahren für ein Leistungshalbleiterbauelement für hohe Abkommutierungssteilheit
US7989376B2 (en) * 2001-06-26 2011-08-02 Afo Research, Inc. Fluorophosphate glass and method for making thereof
EP1840966A1 (fr) * 2006-03-30 2007-10-03 Universite De Neuchatel Couche conductrice transparente et texturée et son procédé de réalisation
US8361914B2 (en) 2008-10-31 2013-01-29 Margaryan Alfred A Optical components for use in high energy environment with improved optical characteristics
US10393887B2 (en) 2015-07-19 2019-08-27 Afo Research, Inc. Fluorine resistant, radiation resistant, and radiation detection glass systems

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718955A (en) * 1960-09-19 1973-03-06 Gen Electric Method of manufacturing semiconductor camera tube targets
US3185891A (en) * 1960-09-19 1965-05-25 Gen Electric Electron optics for infrared camera tubes
DE1262243B (de) * 1964-03-18 1968-03-07 Ibm Deutschland Verfahren zum epitaktischen Aufwachsen von Halbleitermaterial
US3729645A (en) * 1964-12-16 1973-04-24 Gen Electric Photoconductive camera tubes and methods of manufacture
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
US3770606A (en) * 1968-08-27 1973-11-06 Bell Telephone Labor Inc Schottky barrier diodes as impedance elements and method of making same
JPS4924553B1 (https=) * 1968-12-09 1974-06-24
GB1289954A (https=) * 1969-03-13 1972-09-20
FR2120340A5 (https=) * 1970-12-30 1972-08-18 Thomson Csf
US3755002A (en) * 1971-04-14 1973-08-28 Hitachi Ltd Method of making photoconductive film
US3805128A (en) * 1971-05-04 1974-04-16 Hughes Aircraft Co Cadmium sulfide thin film sustained conductivity device with cermet schottky contact

Also Published As

Publication number Publication date
DE2411517A1 (de) 1974-09-26
JPS5137155B2 (https=) 1976-10-14
GB1465367A (en) 1977-02-23
FR2221817A1 (https=) 1974-10-11
NL159824B (nl) 1979-03-15
JPS49118384A (https=) 1974-11-12
NL7403234A (https=) 1974-09-16
FR2221817B1 (https=) 1978-09-08
US3941672A (en) 1976-03-02

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Legal Events

Date Code Title Description
8228 New agent

Free format text: BEETZ SEN., R., DIPL.-ING. BEETZ JUN., R., DIPL.-ING. DR.-ING. TIMPE, W., DR.-ING. SIEGFRIED, J., DIPL.-ING. SCHMITT-FUMIAN, W., PRIVATDOZENT, DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN

8235 Patent refused