DE2408079A1 - Thyristor - Google Patents
ThyristorInfo
- Publication number
- DE2408079A1 DE2408079A1 DE19742408079 DE2408079A DE2408079A1 DE 2408079 A1 DE2408079 A1 DE 2408079A1 DE 19742408079 DE19742408079 DE 19742408079 DE 2408079 A DE2408079 A DE 2408079A DE 2408079 A1 DE2408079 A1 DE 2408079A1
- Authority
- DE
- Germany
- Prior art keywords
- thyristor
- zone
- area
- channel
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 12
- 230000000903 blocking effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH68074A CH567803A5 (US07582779-20090901-C00044.png) | 1974-01-18 | 1974-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2408079A1 true DE2408079A1 (de) | 1975-07-24 |
DE2408079C2 DE2408079C2 (de) | 1987-04-23 |
Family
ID=4192655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2408079A Expired DE2408079C2 (de) | 1974-01-18 | 1974-02-20 | Lichtschaltbarer Thyristor |
Country Status (6)
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2712114A1 (de) * | 1976-03-22 | 1977-10-06 | Gen Electric | Selbstschuetzende halbleitervorrichtung |
DE2628792A1 (de) * | 1976-06-02 | 1977-12-15 | Bbc Brown Boveri & Cie | Thyristor |
DE2746406A1 (de) * | 1976-10-18 | 1978-04-20 | Gen Electric | Thyristor mit hoher gatt-empfindlichkeit und hohem dv/dt-wert |
DE2722064A1 (de) * | 1977-04-15 | 1978-10-19 | Bbc Brown Boveri & Cie | Thyristor |
DE2851303A1 (de) * | 1978-11-15 | 1980-06-12 | Bbc Brown Boveri & Cie | Lichtzuendbarer thyristor |
DE2853292A1 (de) * | 1978-11-24 | 1980-06-12 | Bbc Brown Boveri & Cie | Optisch aktivierbares halbleiterbauelement |
DE3226613A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf |
DE3226624A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit |
EP0446439A1 (de) * | 1990-03-12 | 1991-09-18 | Siemens Aktiengesellschaft | Thyristor mit reflexionsarmer Lichtzündstruktur |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU793421A3 (ru) * | 1976-06-02 | 1980-12-30 | Ббц Аг Браун | Фототиристор |
US4611222A (en) * | 1979-10-12 | 1986-09-09 | Westinghouse Electric Corp. | Solid-state switch |
JPS5989463A (ja) * | 1982-11-15 | 1984-05-23 | Toshiba Corp | サイリスタ |
EP0129702B1 (en) * | 1983-05-26 | 1987-08-05 | General Electric Company | Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone |
EP0230278A3 (de) * | 1986-01-24 | 1989-09-06 | Siemens Aktiengesellschaft | Thyristor mit integrierter Stromversorgung für eine zugeordnete Schaltungseinheit und Verfahren zu seiner Herstellung |
JPS62185680U (US07582779-20090901-C00044.png) * | 1986-05-20 | 1987-11-26 | ||
JPS63260078A (ja) * | 1987-04-17 | 1988-10-27 | Hitachi Ltd | 過電圧自己保護型サイリスタ |
JPH0539638Y2 (US07582779-20090901-C00044.png) * | 1987-08-20 | 1993-10-07 | ||
US6770911B2 (en) * | 2001-09-12 | 2004-08-03 | Cree, Inc. | Large area silicon carbide devices |
US8224637B1 (en) * | 2007-04-02 | 2012-07-17 | Xilinx, Inc. | Method and apparatus for modeling transistors in an integrated circuit design |
US9441307B2 (en) | 2013-12-06 | 2016-09-13 | Saudi Arabian Oil Company | Cathodic protection automated current and potential measuring device for anodes protecting vessel internals |
CN108615785B (zh) * | 2018-05-03 | 2019-09-27 | 电子科技大学 | 一种具有深n+空穴电流阻挡层的光控晶闸管 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3210622A (en) * | 1959-09-11 | 1965-10-05 | Philips Corp | Photo-transistor |
DE2107564A1 (de) * | 1970-02-20 | 1971-09-02 | Mitsubishi Electric Corp | Lichtaktivierter Thyristor |
US3719863A (en) * | 1968-04-17 | 1973-03-06 | Hitachi Ltd | Light sensitive thyristor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1091656A (en) * | 1963-05-13 | 1967-11-22 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
US3822409A (en) * | 1971-06-01 | 1974-07-02 | Matsushita Electric Works Ltd | Photosensitive solid oscillator |
JPS4817634U (US07582779-20090901-C00044.png) * | 1971-07-06 | 1973-02-28 | ||
US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
US3893153A (en) * | 1974-01-10 | 1975-07-01 | Westinghouse Electric Corp | Light activated thyristor with high di/dt capability |
-
1974
- 1974-01-18 CH CH68074A patent/CH567803A5/xx not_active IP Right Cessation
- 1974-02-20 DE DE2408079A patent/DE2408079C2/de not_active Expired
- 1974-12-05 US US05/530,020 patent/US3987476A/en not_active Expired - Lifetime
-
1975
- 1975-01-15 SE SE7500420A patent/SE405660B/xx not_active IP Right Cessation
- 1975-01-16 CA CA218,154A patent/CA1021446A/en not_active Expired
- 1975-01-16 JP JP50007382A patent/JPS584464B2/ja not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3210622A (en) * | 1959-09-11 | 1965-10-05 | Philips Corp | Photo-transistor |
US3719863A (en) * | 1968-04-17 | 1973-03-06 | Hitachi Ltd | Light sensitive thyristor |
DE2107564A1 (de) * | 1970-02-20 | 1971-09-02 | Mitsubishi Electric Corp | Lichtaktivierter Thyristor |
US3697833A (en) * | 1970-02-20 | 1972-10-10 | Mitsubishi Electric Corp | Light activated thyristor |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2712114A1 (de) * | 1976-03-22 | 1977-10-06 | Gen Electric | Selbstschuetzende halbleitervorrichtung |
FR2356279A1 (fr) * | 1976-03-22 | 1978-01-20 | Gen Electric | Dispositif semi-conducteur auto-protege |
DE2628792A1 (de) * | 1976-06-02 | 1977-12-15 | Bbc Brown Boveri & Cie | Thyristor |
DE2746406A1 (de) * | 1976-10-18 | 1978-04-20 | Gen Electric | Thyristor mit hoher gatt-empfindlichkeit und hohem dv/dt-wert |
FR2368146A1 (fr) * | 1976-10-18 | 1978-05-12 | Gen Electric | Thyristor a gachette amplificatrice perfectionne |
DE2722064A1 (de) * | 1977-04-15 | 1978-10-19 | Bbc Brown Boveri & Cie | Thyristor |
DE2851303A1 (de) * | 1978-11-15 | 1980-06-12 | Bbc Brown Boveri & Cie | Lichtzuendbarer thyristor |
DE2853292A1 (de) * | 1978-11-24 | 1980-06-12 | Bbc Brown Boveri & Cie | Optisch aktivierbares halbleiterbauelement |
DE3226613A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf |
DE3226624A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit |
EP0098998A2 (de) * | 1982-07-16 | 1984-01-25 | Siemens Aktiengesellschaft | Lichtzündbarer Thyristor mit geringem Lichtleistungsbedarf und hoher kritischer Spannungsanstiegsgeschwindigkeit |
EP0098997A2 (de) * | 1982-07-16 | 1984-01-25 | Siemens Aktiengesellschaft | Lichtzündbarer Thyristor mit geringem Lichtleistungsbedarf |
EP0098998A3 (en) * | 1982-07-16 | 1986-03-12 | Siemens Aktiengesellschaft | Light-activated thyristor needing low light power and having a high critical voltage rise rate |
EP0098997A3 (en) * | 1982-07-16 | 1986-03-19 | Siemens Aktiengesellschaft | Light-activatable thyristor having a low lighting power requirement |
EP0446439A1 (de) * | 1990-03-12 | 1991-09-18 | Siemens Aktiengesellschaft | Thyristor mit reflexionsarmer Lichtzündstruktur |
Also Published As
Publication number | Publication date |
---|---|
US3987476A (en) | 1976-10-19 |
CH567803A5 (US07582779-20090901-C00044.png) | 1975-10-15 |
JPS50104877A (US07582779-20090901-C00044.png) | 1975-08-19 |
JPS584464B2 (ja) | 1983-01-26 |
SE7500420L (US07582779-20090901-C00044.png) | 1975-07-21 |
DE2408079C2 (de) | 1987-04-23 |
CA1021446A (en) | 1977-11-22 |
SE405660B (sv) | 1978-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2408079A1 (de) | Thyristor | |
DE10330571B4 (de) | Vertikales Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Randbereich und Herstellungsverfahren dafür | |
DE112013005426B4 (de) | Diode und Leistungswandlungssystem | |
DE891580C (de) | Lichtelektrische Halbleitereinrichtungen | |
DE112015000610T5 (de) | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE102007026387A1 (de) | Halbleitervorrichtung und Verfahren zur Herstellung derselben | |
DE2511281C2 (de) | Fotothyristor | |
DE10047152B4 (de) | Hochvolt-Diode und Verfahren zu deren Herstellung | |
DE10240107B4 (de) | Randabschluss für Leistungshalbleiterbauelement und für Diode sowie Verfahren zur Herstellung einer n-leitenden Zone für einen solchen Randabschluss | |
WO2002001646A1 (de) | Hochvolt-diode | |
DE2730477A1 (de) | Fotoempfindliche halbleitervorrichtung | |
DE3538175C2 (de) | Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung | |
DE2238564A1 (de) | Thyristor | |
DE10261424B3 (de) | Verfahren zum Herstellen eines Emitters mit niedrigem Emitterwirkungsgrad | |
DE10245089B4 (de) | Dotierverfahren und Halbleiterbauelement | |
EP0315145A1 (de) | Leistungs-Halbleiterbauelement mit vier Schichten | |
DE2430379A1 (de) | Photoelektronenemissions-halbleiterbauelement | |
DE2710701C3 (de) | Halbleiterbauelement | |
WO2017194320A1 (de) | Laseranordnung und betriebsverfahren | |
DE7405882U (de) | Thyristor | |
WO2000075963A2 (de) | Thyristor mit integriertem freiwerdezeitschutz und herstellungsverfahren dafür | |
DE2942159A1 (de) | Lichtaktivierbarer halbleiterschalter | |
DE3028134C2 (de) | Lichtgesteuerter Halbleitergleichrichter | |
DE10150640B4 (de) | Thyristor mit integriertem Überkopfzündschutz und Verfahren zu seiner Herstellung | |
CH629338A5 (de) | Ohne sperrverzoegerung abschaltbarer thyristor. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OD | Request for examination | ||
8120 | Willingness to grant licences paragraph 23 | ||
8128 | New person/name/address of the agent |
Representative=s name: LUECK, G., DIPL.-ING. DR.RER.NAT., PAT.-ANW., 7891 |
|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: BBC BROWN BOVERI AG, BADEN, AARGAU, CH |
|
8328 | Change in the person/name/address of the agent |
Free format text: DERZEIT KEIN VERTRETER BESTELLT |
|
8339 | Ceased/non-payment of the annual fee |