FR2368146A1 - Thyristor a gachette amplificatrice perfectionne - Google Patents

Thyristor a gachette amplificatrice perfectionne

Info

Publication number
FR2368146A1
FR2368146A1 FR7731185A FR7731185A FR2368146A1 FR 2368146 A1 FR2368146 A1 FR 2368146A1 FR 7731185 A FR7731185 A FR 7731185A FR 7731185 A FR7731185 A FR 7731185A FR 2368146 A1 FR2368146 A1 FR 2368146A1
Authority
FR
France
Prior art keywords
perfected
projection
trigger thyristor
lateral extent
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7731185A
Other languages
English (en)
Other versions
FR2368146B1 (fr
Inventor
Armand Pasquale Ferro
Victor Albert Keith Temple
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2368146A1 publication Critical patent/FR2368146A1/fr
Application granted granted Critical
Publication of FR2368146B1 publication Critical patent/FR2368146B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)

Abstract

Thyristor ayant une sensibilité réduite à l'amorçage par dv/dt Il comprend une gâchette pilote ayant une première région d'émetteurs 28 ayant une première étendue latérale et au moins une projection 28 s'étendant à partir de cette première région, et ayant une étendue latérale plus grande que la première étendue latérale et une région d'isolation 38 entourant partiellement la première région d'émetteurs et la projection pour empêcher une circulation latérale du courant excepté sous la projection. Application aux thyristors déclenchés par la lumière.
FR7731185A 1976-10-18 1977-10-17 Thyristor a gachette amplificatrice perfectionne Granted FR2368146A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73320576A 1976-10-18 1976-10-18

Publications (2)

Publication Number Publication Date
FR2368146A1 true FR2368146A1 (fr) 1978-05-12
FR2368146B1 FR2368146B1 (fr) 1984-01-06

Family

ID=24946651

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7731185A Granted FR2368146A1 (fr) 1976-10-18 1977-10-17 Thyristor a gachette amplificatrice perfectionne

Country Status (6)

Country Link
JP (1) JPS584828B2 (fr)
DE (1) DE2746406C2 (fr)
FR (1) FR2368146A1 (fr)
GB (1) GB1573234A (fr)
IT (1) IT1087185B (fr)
SE (1) SE431806B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204163A (en) * 1981-06-11 1982-12-14 Toyo Electric Mfg Co Ltd Semiconductor device
JPS583283A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ
JPS5998556A (ja) * 1982-11-26 1984-06-06 Mitsubishi Electric Corp 光トリガサイリスタ
GB2150347B (en) * 1983-11-21 1987-02-25 Westinghouse Brake & Signal Amplifying gate thyristor with zones of different cathode-gate resistance
JPS60192124A (ja) * 1984-03-09 1985-09-30 Daikin Mfg Co Ltd ダンパ−デイスクの摩擦装置
JPS63201246U (fr) * 1987-06-17 1988-12-26

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
DE2140700A1 (de) * 1970-08-14 1972-02-17 Hitachi Ltd Thyristoranordnung
GB1346074A (en) * 1971-02-23 1974-02-06 Gen Electric Gate-controlled thyristors
GB1346604A (en) * 1971-02-26 1974-02-13 Gen Electric Gate controlled thyristor
FR2233716A1 (fr) * 1973-06-12 1975-01-10 Siemens Ag
FR2251103A1 (fr) * 1973-11-14 1975-06-06 Siemens Ag
DE2408079A1 (de) * 1974-01-18 1975-07-24 Bbc Brown Boveri & Cie Thyristor
FR2261625A1 (fr) * 1974-02-18 1975-09-12 Siemens Ag

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229592B2 (fr) * 1971-10-01 1977-08-03
JPS539516B2 (fr) * 1971-12-29 1978-04-06

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
DE2140700A1 (de) * 1970-08-14 1972-02-17 Hitachi Ltd Thyristoranordnung
GB1346074A (en) * 1971-02-23 1974-02-06 Gen Electric Gate-controlled thyristors
GB1346604A (en) * 1971-02-26 1974-02-13 Gen Electric Gate controlled thyristor
FR2233716A1 (fr) * 1973-06-12 1975-01-10 Siemens Ag
FR2251103A1 (fr) * 1973-11-14 1975-06-06 Siemens Ag
DE2408079A1 (de) * 1974-01-18 1975-07-24 Bbc Brown Boveri & Cie Thyristor
FR2261625A1 (fr) * 1974-02-18 1975-09-12 Siemens Ag

Also Published As

Publication number Publication date
SE431806B (sv) 1984-02-27
JPS584828B2 (ja) 1983-01-27
SE7711699L (sv) 1978-04-19
IT1087185B (it) 1985-05-31
DE2746406C2 (de) 1983-08-25
FR2368146B1 (fr) 1984-01-06
GB1573234A (en) 1980-08-20
JPS5368083A (en) 1978-06-17
DE2746406A1 (de) 1978-04-20

Similar Documents

Publication Publication Date Title
GB1174899A (en) Improvements relating to Controllable Rectifier Devices
FR2368146A1 (fr) Thyristor a gachette amplificatrice perfectionne
JPS53144689A (en) Thyristor
JPS51126050A (en) Semi-conductor equipment
FR2443179A1 (fr) Transformateur de retour
FR2412169A1 (fr) Thyristor a amplification sur son electrode de commande
FR2389294A1 (fr) Circuit destine a un generateur de rontgen
JPS53100841A (en) Beam shaping optical system
JPS5397386A (en) Avalanche photo diode
JPS5390890A (en) Semiconductor laser device
FR2390048A1 (fr)
JPS5389356A (en) Control unit for gate off thyristor
JPS5366384A (en) Thyristor
SU135986A1 (ru) Способ автоматического регулировани промежутка в дуговых вакуумных электропечах
SU67659A1 (ru) Устройство дл устранени паразитных колебаний в каскаде лампового усилител
JPS5429591A (en) Semiconductor laser device
JPS5360156A (en) Gate control system for gate turn-off thyristor
SU72489A1 (ru) Способ ручной дуговой электросварки
JPS5411678A (en) Electron ray unit
JPS5315791A (en) Semiconductor controlled light emitting device
JPS5413274A (en) Controlled rectifying element of semiconductor
JPS52147986A (en) Manufacture of semiconductor device
JPS5334286A (en) Safety device for escalator
JPS5340847A (en) Reclosing protector for converter
EA199800311A1 (ru) Термопластичный полиолефин и способ его получения

Legal Events

Date Code Title Description
ST Notification of lapse