FR2412169A1 - Thyristor a amplification sur son electrode de commande - Google Patents
Thyristor a amplification sur son electrode de commandeInfo
- Publication number
- FR2412169A1 FR2412169A1 FR7835264A FR7835264A FR2412169A1 FR 2412169 A1 FR2412169 A1 FR 2412169A1 FR 7835264 A FR7835264 A FR 7835264A FR 7835264 A FR7835264 A FR 7835264A FR 2412169 A1 FR2412169 A1 FR 2412169A1
- Authority
- FR
- France
- Prior art keywords
- thyristor
- amplification
- control electrode
- diode
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003321 amplification Effects 0.000 title abstract 3
- 238000003199 nucleic acid amplification method Methods 0.000 title abstract 3
- 244000045947 parasite Species 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Abstract
L'INVENTION CONCERNE UN COMMUTATEUR A SEMI-CONDUCTEURS PRESENTANT UNE AMPLIFICATION SUR SON ELECTRODE DE COMMANDE. IL COMPREND UN THYRISTOR 2 DOTE D'UNE REGION DE COMMANDE 12 ET UNE DIODE 4 INTEGREE SUR LE MEME SUPPORT 6 QUE LE THYRISTOR 2 ET CONNECTEE A LA REGION 12, LA DIODE 4 ET LE SUBSTRAT 6 FORMANT UN TRANSISTOR PARASITE 22 QUI AMPLIFIE LE COURANT DE COMMANDE IG APPLIQUE A L'ELECTRODE DE COMMANDE G PAR L'INTERMEDIAIRE DE LA DIODE 4. L'INVENTION S'APPLIQUE A UN THYRISTOR A EMETTEUR EN COURT-CIRCUIT. ELLE AUTORISE UNE AMPLIFICATION DE L'ORDRE DE 1000 PAR EXEMPLE.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86074277A | 1977-12-14 | 1977-12-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2412169A1 true FR2412169A1 (fr) | 1979-07-13 |
FR2412169B3 FR2412169B3 (fr) | 1981-10-09 |
Family
ID=25333922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7835264A Granted FR2412169A1 (fr) | 1977-12-14 | 1978-12-14 | Thyristor a amplification sur son electrode de commande |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5480092A (fr) |
DE (1) | DE2846697A1 (fr) |
FR (1) | FR2412169A1 (fr) |
GB (1) | GB1566540A (fr) |
IT (1) | IT7869170A0 (fr) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0023130A1 (fr) * | 1979-07-20 | 1981-01-28 | Hitachi, Ltd. | Dispositif semiconducteur de commutation |
EP0049445A2 (fr) * | 1980-10-08 | 1982-04-14 | Asea Ab | Thyristor à auto-allumage |
FR2535529A1 (fr) * | 1982-11-03 | 1984-05-04 | Licentia Gmbh | Element de commutation semi-conducteur commande, comprenant au moins un thyristor et un element d'amorcage integres dans une pastille |
EP0118309A2 (fr) * | 1983-03-03 | 1984-09-12 | Texas Instruments Incorporated | Dispositif semi-conducteur et circuit de démarrage pour lampe à tube fluorescent, fourni d'un tel dispositif |
EP0167929A1 (fr) * | 1984-07-12 | 1986-01-15 | Siemens Aktiengesellschaft | Commutateur à semi-conducteur du type à haute puissance comportant un thyristor |
EP0714139A1 (fr) * | 1994-11-25 | 1996-05-29 | STMicroelectronics S.A. | Composant dipÔle à déclenchement par retounement à sensibilité contrÔlée |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3374740D1 (en) * | 1982-11-15 | 1988-01-07 | Toshiba Kk | Radiation-controllable thyristor |
-
1978
- 1978-05-24 GB GB22195/78A patent/GB1566540A/en not_active Expired
- 1978-08-31 JP JP10697578A patent/JPS5480092A/ja active Pending
- 1978-09-20 IT IT7869170A patent/IT7869170A0/it unknown
- 1978-10-26 DE DE19782846697 patent/DE2846697A1/de not_active Withdrawn
- 1978-12-14 FR FR7835264A patent/FR2412169A1/fr active Granted
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0023130A1 (fr) * | 1979-07-20 | 1981-01-28 | Hitachi, Ltd. | Dispositif semiconducteur de commutation |
EP0049445A2 (fr) * | 1980-10-08 | 1982-04-14 | Asea Ab | Thyristor à auto-allumage |
EP0049445A3 (en) * | 1980-10-08 | 1983-06-22 | Asea Ab | Self firing thyristor |
FR2535529A1 (fr) * | 1982-11-03 | 1984-05-04 | Licentia Gmbh | Element de commutation semi-conducteur commande, comprenant au moins un thyristor et un element d'amorcage integres dans une pastille |
US4613884A (en) * | 1982-11-03 | 1986-09-23 | Licentia Patent-Verwaltungs Gmbh | Light controlled triac with lateral thyristor firing complementary main thyristor section |
EP0118309A2 (fr) * | 1983-03-03 | 1984-09-12 | Texas Instruments Incorporated | Dispositif semi-conducteur et circuit de démarrage pour lampe à tube fluorescent, fourni d'un tel dispositif |
EP0118309A3 (en) * | 1983-03-03 | 1984-11-14 | Texas Instruments Incorporated | Starter circuit for a fluorescent tube lamp |
EP0167929A1 (fr) * | 1984-07-12 | 1986-01-15 | Siemens Aktiengesellschaft | Commutateur à semi-conducteur du type à haute puissance comportant un thyristor |
US4825272A (en) * | 1984-07-12 | 1989-04-25 | Siemens Aktiengesellschaft | Semiconductor power switch with thyristor |
EP0714139A1 (fr) * | 1994-11-25 | 1996-05-29 | STMicroelectronics S.A. | Composant dipÔle à déclenchement par retounement à sensibilité contrÔlée |
FR2727571A1 (fr) * | 1994-11-25 | 1996-05-31 | Sgs Thomson Microelectronics | Thyristor a sensibilite en retournement controlee |
Also Published As
Publication number | Publication date |
---|---|
GB1566540A (en) | 1980-04-30 |
FR2412169B3 (fr) | 1981-10-09 |
JPS5480092A (en) | 1979-06-26 |
DE2846697A1 (de) | 1979-06-21 |
IT7869170A0 (it) | 1978-09-20 |
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