DE2359764A1 - Lichtempfindliche speicherplatte und verfahren zu ihrer herstellung - Google Patents
Lichtempfindliche speicherplatte und verfahren zu ihrer herstellungInfo
- Publication number
- DE2359764A1 DE2359764A1 DE2359764A DE2359764A DE2359764A1 DE 2359764 A1 DE2359764 A1 DE 2359764A1 DE 2359764 A DE2359764 A DE 2359764A DE 2359764 A DE2359764 A DE 2359764A DE 2359764 A1 DE2359764 A1 DE 2359764A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- conductivity type
- diffusion
- impurities
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000003860 storage Methods 0.000 claims description 55
- 239000012535 impurity Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- 230000007704 transition Effects 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 claims 1
- 230000002452 interceptive effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 238000010894 electron beam technology Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Optical Recording Or Reproduction (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7242826A FR2209219B1 (cs) | 1972-12-01 | 1972-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2359764A1 true DE2359764A1 (de) | 1974-06-12 |
Family
ID=9108069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2359764A Pending DE2359764A1 (de) | 1972-12-01 | 1973-11-30 | Lichtempfindliche speicherplatte und verfahren zu ihrer herstellung |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4989427A (cs) |
DE (1) | DE2359764A1 (cs) |
FR (1) | FR2209219B1 (cs) |
GB (1) | GB1457760A (cs) |
-
1972
- 1972-12-01 FR FR7242826A patent/FR2209219B1/fr not_active Expired
-
1973
- 1973-11-29 GB GB5551773A patent/GB1457760A/en not_active Expired
- 1973-11-30 DE DE2359764A patent/DE2359764A1/de active Pending
- 1973-12-01 JP JP48134048A patent/JPS4989427A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB1457760A (en) | 1976-12-08 |
JPS4989427A (cs) | 1974-08-27 |
FR2209219A1 (cs) | 1974-06-28 |
FR2209219B1 (cs) | 1977-07-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2553378C2 (de) | Wärmestrahlungs-Abbildungsvorrichtung | |
DE3225118A1 (de) | Strahlungsdetektor | |
DE3345176C2 (de) | Festkörper-Bildsensor | |
DE3345239C2 (cs) | ||
DE2017067B2 (de) | Pyroelektrischer Detektor | |
DE60319905T2 (de) | Röntgenstrahlungsdetektor | |
DE1808928A1 (de) | Halbleiterbauelement und Verfahren zu dessen Herstellung | |
DE1803505A1 (de) | Elektronenstrahl-Ladungsspeichervorrichtung | |
DE2952289A1 (de) | Ladungsgekoppelte vorrichtung | |
DE3529025C2 (cs) | ||
DE2640832A1 (de) | Elektroakustische vorrichtung zum lesen eines eindimensionalen optischen bildes | |
DE2160033A1 (de) | Strahlungsempfindliche Halbleiteranordnung | |
DE3105910C2 (cs) | ||
DE102004016624A1 (de) | Photomischdetektor | |
DE112014000624T5 (de) | Fotodioden-Anordnung mit einer ladungsabsorbierenden dotierten Zone | |
DE3407038A1 (de) | Halbleiter-photodetektor und verfahren zu dessen antrieb | |
DE2359764A1 (de) | Lichtempfindliche speicherplatte und verfahren zu ihrer herstellung | |
DE2248546A1 (de) | Wandler mit mindestens zwei lichtempfindlichen halbleiterelementen | |
DE69326674T2 (de) | Verfahren und Vorrichtung zur analogen Bildfaltung | |
DE1295613B (de) | Halbleiter-Speicherelektrodenanordnung mit einer Halbleiterschicht und Fernseh-Aufnahmeroehre mit einer solchen Speicherelektrode | |
DE2808620C2 (cs) | ||
DE935249C (de) | Verbesserungen an Fernseh-Bildfaengerroehren | |
DE2754549A1 (de) | Optoelektronischer sensor nach dem prinzip der ladungsinjektion | |
DE2425392C2 (cs) | ||
EP0948817A1 (de) | Farbbildsensor in ladungsverschiebetechnik |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OHN | Withdrawal |