GB1457760A - Photosensitive targets comprising photo-diode arrays - Google Patents

Photosensitive targets comprising photo-diode arrays

Info

Publication number
GB1457760A
GB1457760A GB5551773A GB5551773A GB1457760A GB 1457760 A GB1457760 A GB 1457760A GB 5551773 A GB5551773 A GB 5551773A GB 5551773 A GB5551773 A GB 5551773A GB 1457760 A GB1457760 A GB 1457760A
Authority
GB
United Kingdom
Prior art keywords
type
zone
junctions
hyper
abrupt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5551773A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1457760A publication Critical patent/GB1457760A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
GB5551773A 1972-12-01 1973-11-29 Photosensitive targets comprising photo-diode arrays Expired GB1457760A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7242826A FR2209219B1 (cs) 1972-12-01 1972-12-01

Publications (1)

Publication Number Publication Date
GB1457760A true GB1457760A (en) 1976-12-08

Family

ID=9108069

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5551773A Expired GB1457760A (en) 1972-12-01 1973-11-29 Photosensitive targets comprising photo-diode arrays

Country Status (4)

Country Link
JP (1) JPS4989427A (cs)
DE (1) DE2359764A1 (cs)
FR (1) FR2209219B1 (cs)
GB (1) GB1457760A (cs)

Also Published As

Publication number Publication date
DE2359764A1 (de) 1974-06-12
JPS4989427A (cs) 1974-08-27
FR2209219A1 (cs) 1974-06-28
FR2209219B1 (cs) 1977-07-29

Similar Documents

Publication Publication Date Title
US3403284A (en) Target structure storage device using diode array
US4106046A (en) Radiant energy sensor
US3763372A (en) Zone plate optics monolithically integrated with photoelectric elements
JPS5812746B2 (ja) 半導体光検出装置
US3440476A (en) Electron beam storage device employing hole multiplication and diffusion
US3523208A (en) Image converter
GB1229030A (cs)
US4213137A (en) Monolithic variable size detector
US5578511A (en) Method of making signal charge transfer devices
US3786441A (en) Method and device for storing information and providing an electric readout
US4197553A (en) Monolithic extrinsic silicon infrared detector structure employing multi-epitaxial layers
US5517052A (en) Deep-diffused phototransistor
US4021844A (en) Photosensitive diode array storage target
US4232245A (en) Reduced blooming devices
US20250275272A1 (en) Single-photon detection device, single-photon detector, and single-photon detector array
US3906544A (en) Semiconductor imaging detector device
GB1457760A (en) Photosensitive targets comprising photo-diode arrays
US3423623A (en) Image transducing system employing reverse biased junction diodes
GB1225854A (cs)
US11217719B2 (en) Conductive isolation between phototransistors
US3649889A (en) Vidicon target plate having a drift field region surrounding each image element
US3633077A (en) Semiconductor photoelectric converting device having spaced elements for decreasing surface recombination of minority carriers
US3436549A (en) P-n photocell epitaxially deposited on transparent substrate and method for making same
US3916429A (en) Gated silicon diode array camera tube
US3579012A (en) Imaging device with combined thin monocrystalline semiconductive target-window assembly

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee