DE2352330A1 - Halbleitereinrichtung mit ladungsuebertragung - Google Patents
Halbleitereinrichtung mit ladungsuebertragungInfo
- Publication number
- DE2352330A1 DE2352330A1 DE19732352330 DE2352330A DE2352330A1 DE 2352330 A1 DE2352330 A1 DE 2352330A1 DE 19732352330 DE19732352330 DE 19732352330 DE 2352330 A DE2352330 A DE 2352330A DE 2352330 A1 DE2352330 A1 DE 2352330A1
- Authority
- DE
- Germany
- Prior art keywords
- gate electrodes
- semiconductor substrate
- charge transfer
- semiconductor device
- charges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 239000000758 substrate Substances 0.000 claims description 36
- 230000005540 biological transmission Effects 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47103577A JPS4962089A (enrdf_load_stackoverflow) | 1972-10-18 | 1972-10-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2352330A1 true DE2352330A1 (de) | 1974-05-16 |
Family
ID=14357625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732352330 Pending DE2352330A1 (de) | 1972-10-18 | 1973-10-18 | Halbleitereinrichtung mit ladungsuebertragung |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS4962089A (enrdf_load_stackoverflow) |
| DE (1) | DE2352330A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1446236A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2713876A1 (de) * | 1977-03-29 | 1978-10-05 | Siemens Ag | Ladungsgekoppeltes element (ccd) |
-
1972
- 1972-10-18 JP JP47103577A patent/JPS4962089A/ja active Pending
-
1973
- 1973-10-16 GB GB4820273A patent/GB1446236A/en not_active Expired
- 1973-10-18 DE DE19732352330 patent/DE2352330A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2713876A1 (de) * | 1977-03-29 | 1978-10-05 | Siemens Ag | Ladungsgekoppeltes element (ccd) |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1446236A (en) | 1976-08-18 |
| JPS4962089A (enrdf_load_stackoverflow) | 1974-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHA | Expiration of time for request for examination |