DE2347328A1 - Fotoelektrische halbleiteranordnung - Google Patents

Fotoelektrische halbleiteranordnung

Info

Publication number
DE2347328A1
DE2347328A1 DE19732347328 DE2347328A DE2347328A1 DE 2347328 A1 DE2347328 A1 DE 2347328A1 DE 19732347328 DE19732347328 DE 19732347328 DE 2347328 A DE2347328 A DE 2347328A DE 2347328 A1 DE2347328 A1 DE 2347328A1
Authority
DE
Germany
Prior art keywords
semiconductor device
photoelectric
photodiode
semiconductor layer
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732347328
Other languages
German (de)
English (en)
Inventor
Nobuak Miu-A
Mikizo Miyamot
Shigeruh Kyoto Tanimu-A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Publication of DE2347328A1 publication Critical patent/DE2347328A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE19732347328 1972-12-19 1973-09-20 Fotoelektrische halbleiteranordnung Pending DE2347328A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12757272A JPS5338942B2 (enExample) 1972-12-19 1972-12-19

Publications (1)

Publication Number Publication Date
DE2347328A1 true DE2347328A1 (de) 1974-07-11

Family

ID=14963348

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732347328 Pending DE2347328A1 (de) 1972-12-19 1973-09-20 Fotoelektrische halbleiteranordnung

Country Status (2)

Country Link
JP (1) JPS5338942B2 (enExample)
DE (1) DE2347328A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001899A1 (de) * 1980-01-19 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Planar-fototransistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001899A1 (de) * 1980-01-19 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Planar-fototransistor

Also Published As

Publication number Publication date
JPS4984693A (enExample) 1974-08-14
JPS5338942B2 (enExample) 1978-10-18

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